APPLIED SURFACE SCIENCE
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
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Initial stage of Si(111)-B surface reconstruction studied by scanning tunnelling microscopyYamamoto, T. / Ohara, S. / Ezoe, K. et al. | 1998
- 6
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Effect of fixed particles on periodic adatom arrangements on Si(111) unreconstructed surfacesWatanabe, T. / Handa, T. / Hoshino, T. et al. | 1998
- 13
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Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111)Ezoe, K. / Kuriyama, H. / Yamamoto, T. et al. | 1998
- 18
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Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growthIshimaru, T. / Shimada, K. / Hoshino, T. et al. | 1998
- 23
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Scanning tunneling microscopy study of the initial reaction of SiH~2Cl~2 molecules with the Si(111)-7x7 surfaceKomura, T. / Okano, S. / Morikawa, K. et al. | 1998
- 29
-
Competition between terrace and step nucleation: epitaxy of CaF~2 on vicinal Si(111) studied by atomic force microscopyWollschlaager, J. / Pietsch, H. / Klust, A. et al. | 1998
- 36
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Ballistic electron emission microscopy studies of Au/CaF~2/n-Si(111) interfacesSumiya, T. / Fujinuma, H. / Miura, T. et al. | 1998
- 41
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Growth process of twinned epitaxial layers on Si(111)3x3-B and their thermal stabilityHibino, H. / Sumitomo, K. / Ogino, T. et al. | 1998
- 47
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Diffraction from small antiphase domains: -3x3, -3x3, 6x6 phases of Au adsorbed Si(111)Nagao, T. / Voges, C. / Pfnuer, H. et al. | 1998
- 54
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Step distribution in the Si(111) surface and its effect on microstructure of MBE-grown single- and multi-layered filmsNishikawa, K. / Yamamoto, M. / Kingetsu, T. et al. | 1998
- 60
-
Adatom effective charge in morphology evolution on Si(111) surfaceLatyshev, A. V. / Minoda, H. / Tanishiro, Y. et al. | 1998
- 67
-
Photoelectron diffraction study on the epitaxial growth of SrF~2 on Ge(111)-c(2x8)Omori, S. / Ishii, H. / Nihei, Y. et al. | 1998
- 72
-
The change of atomic structures and compositions of (Pb,Sn)/Si(111) surfaces by thermal annealingNakamura, D. / Yuhara, J. / Morita, K. et al. | 1998
- 78
-
Selective chemical reaction of HBO~2 molecules on the Si(111)-7x7 surface studied by scanning tunneling microscopyMiyake, K. / Ishida, M. / Shigekawa, H. et al. | 1998
- 84
-
Electric properties of nanoscale contacts on Si(111) surfacesHasunuma, R. / Komeda, T. / Tokumoto, H. et al. | 1998
- 90
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Laser-induced mono-atomic-layer etching on Cl-adsorbed Si(111) surfacesIimori, T. / Hattori, K. / Shudo, K. et al. | 1998
- 96
-
New structural model for the Si(111)4x1-In reconstructionSaranin, A. A. / Zotov, A. V. / Ignatovich, K. V. et al. | 1998
- 101
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The role of (4x3) surface reconstruction induced by In adsorption for the heteroepitaxial growth of InSb on Si(001)-2x1 surfaceLi, D. M. / Atoji, M. / Yamazaki, M. et al. | 1998
- 107
-
Nitridation of Si(100) surface with NH~3Ishidzuka, S. / Igari, Y. / Takaoka, T. et al. | 1998
- 112
-
Domain wall structure of Te/Si(001) surface studied by LEEDOhtani, T. / Tamiya, K. / Takeda, Y. et al. | 1998
- 118
-
Scanning tunneling microscopy on Sn/Si(110) systemAn, T. / Yoshimura, M. / Ueda, K. et al. | 1998
- 123
-
Observation of dimer dangling bonds on a Si(001) 2x1 surface by grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopyShimoshikiryo, F. / Takakuwa, Y. / Miyamoto, N. et al. | 1998
- 128
-
The evidence for a preferential growth of a MnAs thin film on an as-preadsorbed Si(001) surfaceNakamura, M. / Shuzo, M. / Ono, K. et al. | 1998
- 133
-
Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scatteringSumitomo, K. / Nishioka, T. / Ogino, T. et al. | 1998
- 139
-
Peculiarities of step bunching on Si(001) surface induced by DC heatingLatyshev, A. V. / Litvin, L. V. / Aseev, A. L. et al. | 1998
- 146
-
Electrochemical study of atomically flattening process of silicon surface in 40% NH~4F solutionFukidome, H. / Matsumura, M. et al. | 1998
- 151
-
Strain as driving force for interface roughening of -doping layersFalta, J. et al. | 1998
- 156
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Surface, interface and valence band structures of ultra-thin silicon oxidesHattori, T. et al. | 1998
- 165
-
Initial oxidation stage of the Ge(100) 2x1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopyFukuda, T. / Ogino, T. et al. | 1998
- 170
-
Reactivity of O~2 with Si(111) surfaces with different surface structuresShimada, K. / Ishimaru, T. / Katsube, S. et al. | 1998
- 176
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Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfacesKageshima, H. / Shiraishi, K. et al. | 1998
- 182
-
Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interfacePrabhakaran, K. / Kobayashi, Y. / Ogino, T. et al. | 1998
- 187
-
X-ray photoelectron study in the initial stage of oxynitridation process by excited nitrogen and oxygenSaito, Y. / Iguchi, S. et al. | 1998
- 192
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Local bonding structures of SiO~2 films on H-terminated Si(100) surfaces studied by using high-resolution electron energy loss spectroscopyNakagawa, Y. / Higashi, M. / Ikeda, H. et al. | 1998
- 197
-
Oxidation of spatially controlled atomically flat Si(001) surfaceAndo, A. / Sakamoto, K. / Miki, K. et al. | 1998
- 202
-
Atomic-layer chemical-vapor-deposition of silicon dioxide films with an extremely low hydrogen contentYamaguchi, K.-I. / Imai, S. / Ishitobi, N. et al. | 1998
- 208
-
Analysis of local lattice strain around oxygen precipitates in silicon crystals using CBED techniqueYonemura, M. / Sueoka, K. / Kamei, K. et al. | 1998
- 214
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Electronic characterization of Si/SiO~2 structure using photo-CVD SiO~2 thin film on atomically flat Si substrateMaida, O. / Yamamoto, H. / Okada, N. et al. | 1998
- 221
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Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technologyLyding, J. W. / Hess, K. / Abeln, G. C. et al. | 1998
- 231
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Step structure on H/Si formed in hot water as revealed with angle-resolved polarized infrared spectroscopyWatanabe, S. et al. | 1998
- 237
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Al adatom migration from the H-terminated to the bare area on Si(111) surfacesEnomoto, N. / Hoshino, T. / Hata, M. et al. | 1998
- 243
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Hydrogen molecule trapped in silicon crystalNakamura, K. G. / Ishioka, K. / Kitajima, M. et al. | 1998
- 248
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Formation of an ordered surface compound consisting of Ag, Si, and H on Si(001)Nagashima, A. / Kimura, T. / Yoshino, J. et al. | 1998
- 254
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First-principles calculation on diffusion of Si adatoms on H/Si(001)-(2x1) surfaceNara, J. / Sasaki, T. / Ohno, T. et al. | 1998
- 260
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Hydrogen adsorption and desorption processes on Si(100)Terashi, M. / Kuge, J.-K. / Shinohara, M. et al. | 1998
- 266
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Observation of hydrogen adsorption on Si(001) by reflectance difference spectroscopyShioda, R. / Van der Weide, J. et al. | 1998
- 271
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Study of the electronic and adsorption structure of Cs and H coadsorption on Si(100)2x1Shimizu, M. / Hasebe, H. / Hongo, S. et al. | 1998
- 276
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Initial stages of Ni reaction on Si(100) and H-terminated Si(100) surfacesYoshimura, M. / Ono, I. / Ueda, K. et al. | 1998
- 282
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Adsorption of SiH~4 or Si~2H~6 on P/Si(100) at room temperaturesTsukidate, Y. / Suemitsu, M. et al. | 1998
- 287
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Barrierless bond breaking and exchange diffusion on Si(100)-HJeong, S. / Oshiyama, A. et al. | 1998
- 292
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Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100)Akazawa, H. et al. | 1998
- 298
-
Higher-order desorption kinetics of hydrogen from silane/, disilane/, and D/Si(100)Nakazawa, H. / Suemitsu, M. et al. | 1998
- 304
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Saturation adsorption reaction of cracked Si~2H~6 on Si(001) and Ge(001)Suda, Y. / Misato, Y. / Shiratori, D. et al. | 1998
- 310
-
Hydrogen terminated Si(111) surface studied by RHEEDYakovlev, N. L. / Shusterman, Yu. V. / Maksym, P. A. et al. | 1998
- 314
-
Composition of dimers on Ge/Si(001)2x1 surfaces analyzed by infrared (IR) reflection spectroscopy of surface hydrogen vibrationKobayashi, Y. / Isaka, H. / Ogino, T. et al. | 1998
- 321
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Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxyMuto, A. / Okada, M. / Ikeda, H. et al. | 1998
- 327
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Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germaniumSugahara, S. / Hosaka, K. / Matsumura, M. et al. | 1998
- 334
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Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H-Si(111)Loher, T. / Ueno, K. / Koma, A. et al. | 1998
- 340
-
Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2x1-H surfaceHitosugi, T. / Hashizume, T. / Heike, S. et al. | 1998
- 346
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Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfacesFukutome, H. / Takano, K. / Yasuda, H. et al. | 1998
- 352
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Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfacesYokoyama, S. / Ikeda, N. / Kajikawa, K. et al. | 1998
- 357
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Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound filmsJoyce, B. A. / Vvedensky, D. D. / Avery, A. R. et al. | 1998
- 367
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Optical approaches for controlling epitaxial growthAspnes, D. E. / Dietz, N. et al. | 1998
- 377
-
Metalorganic molecular beam epitaxy/etching of III-V semiconductorsGonda, S. / Asahi, H. / Yamamoto, K. et al. | 1998
- 382
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Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction studyShen, A. / Ohno, H. / Horikoshi, Y. et al. | 1998
- 387
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Scattering of NH~3 from reconstructed GaAs(100) surfacesSugawara, S. / Sasaki, M. / Yamamoto, S. et al. | 1998
- 393
-
Thermal diffusion of Er atoms -doped in InPTabuchi, M. / Fujita, K. / Tsuchiya, J. et al. | 1998
- 398
-
Polar surface dependence of epitaxy processes: ZnSe on GaAs{111}A, B-(2x2)Ohtake, A. / Miwa, S. / Kuo, L.-H. et al. | 1998
- 403
-
Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulationIshii, A. / Kawamura, T. et al. | 1998
- 409
-
Compensation mechanism of undoped GaAs films grown by molecular beam epitaxy using an As-valved cracker cellHong, C. U. / Gozu, S. / Okayasu, J. et al. | 1998
- 414
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GaAs growth selectivity using a GaN mask by MOMBEYoshida, S. / Sasaki, M. et al. | 1998
- 419
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Adsorption and decomposition of triethylindium on Si(001) and GaP(001) studied by HREELS and TPDKaneda, G. / Murata, J. / Takeuchi, T. et al. | 1998
- 425
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Bias voltage-dependent scanning tunneling microscopy images of a GaAs(110) surface with small Ag clustersJiang, C.-S. / Nakayama, T. / Aono, M. et al. | 1998
- 431
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Theoretical investigation of inter-surface diffusion on non-planar GaAs surfacesShiraishi, K. / Suzuki, Y. Y. / Kageshima, H. et al. | 1998
- 436
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Ga-S-Ga bridge-bond formation on in-situ S-treated GaAs(001) surface observed by synchrotron radiation photoemission spectroscopy, X-ray absorption near edge structure, and X-ray standing wavesSugiyama, M. / Maeyama, S. / Watanabe, Y. et al. | 1998
- 441
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Photoemission study of metal deposition on sulfur-treated GaAs(100)Shoji, D. / Miura, T.-A. / Niwano, M. et al. | 1998
- 447
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Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InPOhkouchi, S. / Gomyo, A. et al. | 1998
- 452
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Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growthKasu, M. / Makimoto, T. / Kobayashi, N. et al. | 1998
- 457
-
Atomic structure studies of (113)B GaAs surfaces grown by metalorganic vapor phase epitaxyKawase, M. / Ishikawa, Y. / Fukui, T. et al. | 1998
- 464
-
Surface free energy modification of CaF~2 by atomic-height island formation on heteroepitaxy of GaAs on CaF~2Kawasaki, K. / Tsutsui, K. et al. | 1998
- 469
-
Effects of step bunching on CuPt-B ordered structures in Ga~0~.~5In~0~.~5P grown by MOVPEGomyo, A. / Miyasaka, F. / Hotta, H. et al. | 1998
- 475
-
Nano-scale patterning of metal surfaces by adsorption and reactionTanaka, K.-I. / Matsumoto, Y. / Fujita, T. et al. | 1998
- 484
-
Adsorption and growth on nanostructured surfacesZeppenfeld, P. / Diercks, V. / Tolkes, C. et al. | 1998
- 491
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STM study of preferential growth of one-dimensional nickel islands on a Cu(100)-(22x2)R45-O surfaceFujita, T. / Okawa, Y. / Tanaka, K.-I. et al. | 1998
- 497
-
Epitaxial growth of Ag on Ni(111)Ito, T. / Umezawa, K. / Nakanishi, S. et al. | 1998
- 501
-
The dynamics study of metallocene catalyst using molecular dynamicsSato, T. / Oumi, Y. / Takaba, H. et al. | 1998
- 506
-
Enhanced diffusion of surface atoms at metal/electrolyte interface under potential controlHirai, N. / Tanaka, H. / Hara, S. et al. | 1998
- 512
-
Angular resolved field emission spectra from Nb tipsNagaoka, K. / Yamashita, T. / Yamada, M. et al. | 1998
- 518
-
Oriented oxygen admolecules on a stepped platinum(133) surfaceSano, M. / Seimiya, Y. / Ohno, Y. et al. | 1998
- 523
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STM images of polycrystalline palladiumAn, B. / Fukuyama, S. / Yokogawa, K. et al. | 1998
- 527
-
Possibilities for atom by atom restructuring of surfaces employing native substrate atoms as well as foreign speciesMeyer, G. / Bartels, L. / Zophel, S. et al. | 1998
- 534
-
Surface segregation of implanted ions: Bi, Eu, and Ti at the MgO(100) surfaceSuzuki, T. / Hishita, S. / Oyoshi, K. et al. | 1998
- 539
-
Periodic density functional study on V~2O~5 bulk and (001) surfaceYin, X. / Fahmi, A. / Endou, A. et al. | 1998
- 545
-
Molecular dynamics simulations on oxygen ion diffusion in strained YSZ/CeO~2 superlatticeSuzuki, K. / Endou, A. / Miura, R. et al. | 1998
- 549
-
Molecular dynamics study on the stability of -Al~2O~3 surfacesGunji, I. / Teraishi, K. / Endou, A. et al. | 1998
- 555
-
Effects of structural characteristics of zeolites on the properties of their bridging and terminal hydroxyl groupsChatterjee, A. / Iwasaki, T. / Ebina, T. et al. | 1998
- 561
-
Density functional calculation on the adsorption of nitrogen oxides and water on ion exchanged ZSM-5Kanougi, T. / Tsuruya, H. / Oumi, Y. et al. | 1998
- 566
-
Nucleation from ionic molecules in Stranski-Krastanov growth of CuCl on MgO(001)Yanase, A. / Segawa, Y. et al. | 1998
- 572
-
Electronic and structural features of Pd~3 cluster on MgO(100) surface clusterYamauchi, R. / Gunji, I. / Endou, A. et al. | 1998
- 576
-
In situ surface characterization of SrTiO~3(100) substrates and homoepitaxial SrTiO~3 thin films grown by molecular beam epitaxy and pulsed laser depositionNakamura, T. / Inada, H. / Iiyama, M. et al. | 1998
- 582
-
Observation of SrTiO~3 step edge dynamics by real-time high-temperature STMLippmaa, M. / Kawasaki, M. / Ohtomo, A. et al. | 1998
- 587
-
Electronic structure of TiO~2(110) surface as a function of surface ligand configurationKimura, S. / Tsukada, M. et al. | 1998
- 593
-
Atomic and electronic structures of heat treated 6H-SiC surfaceJikimoto, T. / Wang, J. L. / Saito, T. et al. | 1998
- 598
-
Water adsorption on electron irradiated NaF(001) surfaceYamada, T. / Miura, K. et al. | 1998
- 602
-
AFM study of surface phenomena based on C~6~0 film growthKim, Y. / Jiang, L. / Iyoda, T. et al. | 1998
- 610
-
Theoretical investigation of the thickness effect of ferroelectric incorporating semiconducting propertiesWatanabe, Y. et al. | 1998
- 616
-
Interface atomic structures in alkali halides heteroepitaxyNatori, A. / Toda, K. / Tanaka, A. et al. | 1998
- 623
-
STM study of the reactivity of niobium diselenide in air and N~2Antoranz Contera, S. / Yoshinobu, T. / Iwasaki, H. et al. | 1998
- 629
-
Ultrabright synchrotron radiation applied to the characterization and control of interfacesMargaritondo, G. / Bernstorff, S. / Kiskinova, M. et al. | 1998
- 639
-
Direct atomic observation of chemical reaction between silicon carbide and titanium-containing molten alloyIwamoto, C. / Tanaka, S.-I. et al. | 1998
- 643
-
Control of epitaxial orientation of TiN thin films grown by N-implantationKasukabe, Y. / Ito, A. / Nagata, S. et al. | 1998
- 651
-
In situ X-ray characterization of oligophenylene thin films prepared by organic molecular beam depositionYoshida, Y. / Takiguchi, H. / Hanada, T. et al. | 1998
- 658
-
Control of molecular orientation in TTF-TCNQ co-evaporated films by applying an electric fieldKato, N. A. / Fujimura, M. / Kuniyoshi, S. et al. | 1998
- 663
-
Growth of copper-phthalocyanine thin films on mica using a two-stage deposition techniqueWatanabe, M. / Sano, K.-I. / Inoue, M. et al. | 1998
- 670
-
Fabrication of C~6~0 nanostructures by selective growth on GaSe/MoS~2 and InSe/MoS~2 heterostructure substratesUeno, K. / Sasaki, K. / Nakahara, T. et al. | 1998
- 676
-
Tip-surface transfer of adatoms in AFM/STM: effect of quantum oscillationsTilinin, I. S. / Van Hove, M. A. / Salmeron, M. et al. | 1998
- 682
-
Leakage current spectroscopy of epitaxial ferroelectric/semiconductor heterosructures and their memory effectWatanabe, Y. / Sawamura, D. / Okano, M. et al. | 1998
- 689
-
S~B step growth mechanism on the reconstructed (001) surfaces of diamond structure crystalsHata, M. / Murayama, Y. / Hoshino, T. et al. | 1998
- 694
-
Electron emission properties of crystalline diamond and III-nitride surfacesNemanich, R. J. / Baumann, P. K. / Benjamin, M. C. et al. | 1998
- 704
-
Self-organization on semiconductor surfaces: fundamental thermodynamic issuesCarlow, G. R. / Perovic, D. D. / Zinke-Allmang, M. et al. | 1998
- 713
-
Formation of self-organized quantum dots at semiconductor surfacesBimberg, D. / Shchukin, V. A. / Ledentsov, N. N. et al. | 1998
- 719
-
Atomic force microscopy study of self-organized ZnCdSe nanostructures fabricated on the cleavage-induced GaAs (110) surfaceKo, H.-C. / Kawakami, Y. / Fujita, S. et al. | 1998
- 724
-
Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxyNonogaki, Y. / Iguchi, T. / Fuchi, S. et al. | 1998
- 729
-
Optical properties of quantum dots self-formed in GaP/InP short period superlattices grown on GaAs (N11) substratesKim, S. J. / Asahi, H. / Asami, K. et al. | 1998
- 737
-
Selective growth of self-organizing InAs quantum dots on strained InGaAs surfacesHiwatashi, F. / Yamaguchi, K. et al. | 1998
- 742
-
The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)Totsuka, H. / Kurtz, E. / Hanada, T. et al. | 1998
- 747
-
Formation of single-crystalline silicon nanostructures by self-assembling growth with molecular beam epitaxyBaumgaartner, H. / Kaesen, F. / Gossner, H. et al. | 1998
- 755
-
Properties of self-organized CdSe quantum dots on an atomically flat (111)A ZnSe surfaceKurtz, E. / Jung, H. D. / Hanada, T. et al. | 1998
- 760
-
InAs nanocrystal growth on Si (100)Mano, T. / Fujioka, H. / Ono, K. et al. | 1998
- 765
-
Atomic-hydrogen-induced self-organization processes of the In/Si(111) surface phases studied by scanning tunneling microscopyKatayama, M. / Numata, T. / Kubo, O. et al. | 1998
- 771
-
Control of step structures of Si(001) by highly doped AsShimizu, T. / Ando, A. / Tokumoto, H. et al. | 1998
- 776
-
Growth and characterization of Ge nanocrystals in ultrathin SiO~2 filmsFukuda, H. / Kobayashi, T. / Endoh, T. et al. | 1998
- 781
-
Self-organization of nanoscale Ge islands in Si/Ge/Si(113) multilayersOmi, H. / Ogino, T. et al. | 1998
- 786
-
Nanowire formation in self-assembled monolayers from fluorocarbon-hydrocarbon on Au(111)Ishida, T. / Mizutani, W. / Tokumoto, H. et al. | 1998
- 792
-
Monte Carlo simulation of phase-separated self-assembled filmsMizutani, W. / Ishida, T. / Tokumoto, H. et al. | 1998
- 797
-
Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substratesGuo, S. P. / Ohno, H. / Shen, A. et al. | 1998
- 803
-
Nanotips and nanomagnetismBinh, V. T. / Purcell, S. T. / Semet, V. et al. | 1998
- 815
-
New development of a high-resolution scanning ESD system for two-dimensional images of hydrogen and its applicationsUeda, K. / Ishikawa, K. / Yoshimura, M. et al. | 1998
- 822
-
Synthesis of TiO~2 thin films by metalorganic pulsed molecular beam deposition with an oxygen-radical beam sourceWatanabe, S. / Nozoye, H. et al. | 1998
- 828
-
The study of amorphization in multilayer Fe/Hf with slow positron beamOhtaki, H. / Koizumi, T. / Iwamoto, A. et al. | 1998
- 834
-
Multiply twinned particle micelleTakami, T. / Sugiura, K.-I. / Sakata, Y. et al. | 1998
- 841
-
Dynamic control and measurement of thin film growth on a rotating wafer by reflectance analysis of inclined incident laser beamSato, N. / Pal Singh, B. / Narazaki, W. et al. | 1998
- 845
-
Use of silicate crystallite mesoporous material as catalyst support for Fischer-Tropsch reactionIwasaki, T. / Reinikainen, M. / Onodera, Y. et al. | 1998
- 851
-
Energy loss spectroscopy for Li/Si by energy filtered RHEEDHorio, Y. / Urakami, Y. et al. | 1998
- 855
-
Semiconductor nanostructures: a new impact on electronicsLuth, H. et al. | 1998
- 866
-
Hetero interfaces of Bi-based superconductor/insulator and electrical propertiesSugihara, S. / Yutoh, Y. / Aoi, T.-A. et al. | 1998
- 870
-
Phonon dispersion of nano-graphite ribbonsIgami, M. / Fujita, M. / Mizuno, S. et al. | 1998
- 876
-
Electronic states of monolayer micrographite on TiC(111)-faceted and TiC(410) surfacesTerai, M. / Hasegawa, N. / Okusawa, M. et al. | 1998
- 883
-
Nonlinear optical properties of tin-phthalocyanine thin filmsYamashita, M. / Inui, F. / Irokawa, K. et al. | 1998
- 889
-
Magnetic properties of atomically-thin epitaxial dots and stripes with micrometer lateral sizeRamsperger, U. / Vaterlaus, A. / Maier, U. et al. | 1998
- 892
-
Initial stage of Schottky barrier formation of ferromagnetic MnSb(0001) films on GaAs(111)BOshima, M. / Shuzo, M. / Ono, K. et al. | 1998
- 899
-
Local structures around Fe atoms and magnetic properties of [fcc-Fe/Cu] multilayersOfuchi, H. / Kubo, T. / Matsumoto, N. et al. | 1998
- 904
-
Below-gap light emission from type II heterointerface of In~0~.~5~2Al~0~.~4~8As/InP system grown on (111)B and (100) InP substratesKamada, A. / Kawamura, Y. / Yoshimatsu, K. et al. | 1998
- 909
-
Dependence of electric field on STM tip preparationHuang, D. H. / Grey, F. / Aono, M. et al. | 1998
- 914
-
Fabrication and characterization of field effect transistors using donor and acceptor stacked layersIizuka, M. / Shiratori, Y. / Kuniyoshi, S. et al. | 1998
- 919
-
Au particle deposition onto self-assembled monolayers of thiol and dithiol moleculesOhgi, T. / Sheng, H.-Y. / Nejoh, H. et al. | 1998
- 925
-
Metal-induced gap states model of nonideal Au/Si Schottky barrier with low defect densityMaeda, K. / Kitahara, E. et al. | 1998