Vacuum
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 335
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The many facets of vacuum safety| 1973
- 335
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Carbon monoxide adsorption on Ni(110)| 1973
- 335
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Orbital energy spectra of CO and Hg adsorbed on Ni(100)| 1973
- 335
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The adsorption and decomposition of CO on Pt(111)| 1973
- 335
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The bond-energy bond-order (LEBO) model of chemisorption| 1973
- 335
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Time-of-flight analysis of ions and excited neutrals released by ESD of CO on (100) W| 1973
- 335
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Auger line shape comparison of N and S in two different chemical environments| 1973
- 335
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Studies of adsorption kinetics by means of molecular flow experiments| 1973
- 336
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The use of ion beams in surface physics studies| 1973
- 336
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Sticking coefficient of CO2 on solid H2O films| 1973
- 336
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Scattering of diatomic and polyatomic molecules from the (100) crystal face of platinum| 1973
- 336
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Reaction kinetics of gas-solid reactions at elevated temperatures| 1973
- 336
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Scattering of metastable molecules from a gas-covered (100) surface of germanium| 1973
- 336
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Lateral interaction in adsorption and desorption kinetics| 1973
- 336
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Surface self diffusion at cryogenic temperatures: Rh on Rh| 1973
- 336
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Photoemission spectra from adsorbed O on W(110) and CO on W(100)| 1973
- 336
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Interaction of carbon monoxide with (110) nickel| 1973
- 336
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Impedance probe and dc probe studies on the plasma of a glow discharge| 1973
- 336
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Adsorption and solution of H2 and N2 by Ta and Nb| 1973
- 336
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Oxidation of (011) iron at room temperature: mainly LEED aspects| 1973
- 336
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Spatial distribution of CO2 and H2O molecules on reflection an sublimation from a cold surface| 1973
- 336
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FEM studies of oxygen on silver| 1973
- 337
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An apparatus to study the optical absorption of transition metal thin films at normal and oblique incidence in high vacuum| 1973
- 337
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A comparative experimental study of electron and positive-ion current collection by a cylindrical Langmuir probe under orbital-limited conditions| 1973
- 337
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Positive ion bombardment of substrates in rf glow discharge sputtering| 1973
- 337
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Some special pumping problems associated with the sputtering application| 1973
- 337
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The initation of electrical breakdown in vacuum—a review| 1973
- 337
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Cryogenic installation for the opticalk study of thin films at 5°K to 300°K| 1973
- 337
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Current applications of low pressure rf plasma to thin and thick film technologies| 1973
- 337
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Vacuum system for an infrared calibration facility| 1973
- 337
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The breakdown potential and first ionization coefficient in a townsend discharge in caesium vapour| 1973
- 337
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Laser excitation processes in the cathode region of a glow discharge through metal-vapour-rare-gas mixtures| 1973
- 337
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Current limitation in mercury vapour discharges—II. Experiment| 1973
- 337
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A new technique for high speed anodization in a dc oxygen glow discharge| 1973
- 338
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Tubomolecular pumps: theory and operating characteristics| 1973
- 338
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Partial pressure analysis using a two-chamber gauge together with an ion-electron converter| 1973
- 338
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UHV opening technique for analyzing metal ceramic vacuum tubes| 1973
- 338
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Electrostatic getter-ion pump performance| 1973
- 338
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High speed cryosorption pumping from atmosphere to 10−6 torr| 1973
- 338
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Access to uncombined titanium through an inhibiting film in sublimation pumping of deuterium| 1973
- 338
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Pressure measurement with a hot cathode ionisation gauge in the pressure range above 10−3 torr| 1973
- 338
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Cryopumping| 1973
- 338
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Guidelines for pump selection| 1973
- 338
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Thermal load of liquid pool cryopumps| 1973
- 338
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Advances in diffusion pump technology| 1973
- 338
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Further measurements on physical factors influencing accomodation pumps| 1973
- 338
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The production of vacuum via ion and sublimation pumping| 1973
- 339
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Pneumatic logic controls for automatic vacuum systems| 1973
- 339
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A vacuum lock facility for the rapid insertion of specimens to UHV| 1973
- 339
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Apparatus for the controlled co-deposition on MnBi thin films| 1973
- 339
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Fluorescence of tetraphenyl-butadiene in the vacuum ultraviolet| 1973
- 339
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The growth of a GaAs-GaAlAs superlattice| 1973
- 339
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The preparation of thin films of B-1 structure superconducting ternary compounds| 1973
- 339
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Recent advances in the chemical capour growth of electronic materials| 1973
- 339
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Use of stabilized zirconia as a selective oxygen leak source| 1973
- 339
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Measuring hydrocarbon gas pressure with an ionization gauge| 1973
- 339
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Thermal transpiration error in absolute measurement with capacitance manometers| 1973
- 339
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An ultrasensitive hydrogen detector and its applications| 1973
- 340
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Superconducting properties and structure of reactively sputtered niobium carbide thin films| 1973
- 340
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Physics of ion plating and ion beam deposition| 1973
- 340
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Distribution and apparent source geometry of electron-beam-heated evaporation sources| 1973
- 340
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In situ cleaning of thin film metal substrates for UHV-TEM corrosion studies| 1973
- 340
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Thin film manufacturing by computer control| 1973
- 340
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Fabrication of framed beryllium windows by high rate physical vapour deposition processes| 1973
- 340
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Design and operational of a large scale semicontinous electron beam evaporator| 1973
- 340
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Fundamentals of ion plating| 1973
- 341
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Electrical properties of evaporated tellurium films and TFT's| 1973
- 341
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Linearity of a heavily loaded quartz crystal microbalance| 1973
- 341
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Observations of sputtered thin film growth| 1973
- 341
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Effects of deposition temperatures on Ta thin film resistors reactively sputtered in oxygen| 1973
- 341
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dc bias-sputtered aluminium films| 1973
- 341
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Development of continuous sputtering machines| 1973
- 341
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The effect of water vapour on the sticking coefficient of lead on silicon monoxide| 1973
- 341
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Ferroelectrics properties of Tri-glycine sulphate thin films| 1973
- 341
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Detachable (111) Cu films formed in ultrahigh vacuum| 1973
- 342
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Sources materials for batch coating| 1973
- 342
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Some causes for nonbulk properties in vacuum deposited films| 1973
- 342
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Physical vapour deposition processes for thick films of metals and compounds| 1973
- 342
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New device for measuring film thickness by a quartz oscillator| 1973
- 342
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Thin-film IV–VI compound diode lasers| 1973
- 342
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Chromium deposition in a rotatary drum evaporator| 1973
- 342
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Magnetric bubble thin film technology| 1973
- 342
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A. discussion of some techniques for obtaining elemental composition profiles| 1973
- 342
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Recent advances in composition profiling by simultaneous sputtering and Auger analysis| 1973
- 342
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Molecular beam studies of the kinetics of condensation of solids on surfaces| 1973
- 342
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The fabrication of an implantable blood irradiator by electrodeposition and sputtering| 1973
- 342
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Sputtering| 1973
- 342
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The formation and orientation of carbon on platinum single crystal surfaces| 1973
- 342
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Thin film preparation by chemical vapour deposition| 1973
- 342
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Metals films for semiconductor apllications| 1973
- 342
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Liquid phase Epitaxy—techniques and applications| 1973
- 342
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A simple triggered vacuum gap| 1973
- 342
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Unusual growth morphology in vacuum evaporation synthesized compounds| 1973
- 342
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Important new properties of an rf coaxial diode sputtering apparatus| 1973
- 342
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Cylindrical diode continous vacuum sputtering equipment for laboratory and high volume production| 1973
- 342
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Atomic arrangement in ion inplanted thin films of Ge| 1973
- 342
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Characterization of thin films by X-ray diffractometry| 1973
- 342
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Field ion microscope study of anisotropic binding forces in Mo3Ga| 1973
- 342
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Silicon device surface protection with dielectric films and coatings| 1973
- 343
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Variable bandwidth transmission filter for the vacuum ultraviolet: La1−xCexF3| 1973
- 343
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Surface photovoltage spectroscopy— new approach to the study of high-gap semiconductor surfaces| 1973
- 343
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Signal to noise relationhip in a quadrupole mass analyzer| 1973
- 343
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The use of scanning Auger microscopy in molecular beam epitaxy of GaAs and GaP| 1973
- 343
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Retarding-field-cylindrical-mirror analyzer| 1973
- 343
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Thin film characterization by nuclear microanalysis| 1973
- 343
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Stability of photocathodes| 1973
- 343
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High-voltage conditioning at large gap in industrial vacuum| 1973
- 343
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The electronic structure of solid surfaces: core level excitation techniques| 1973
- 343
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Auger and other characteristic energies in secondary electron spectra from thin evaporated phosphorous films| 1973
- 344
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Piezoresistance in evaporated nickel films| 1973
- 344
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Electron irradiation effects on thin CaF2 films| 1973
- 344
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Thermal diffuse of low-energy electrons at low temperature| 1973
- 344
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Growth effects on stress in nickel films| 1973
- 344
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Quantitative AES and LEED study of alkali metal overlayers on W (100)| 1973
- 344
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Consideration of L-shell ionization cross sections in Auger electron spectroscopy| 1973
- 344
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Effect of steps on low-energy electron diffraction intensity profiles| 1973
- 344
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Precision determination of surface plasmon dispersion on Al(111) films via inelastic low-energy electron diffraction| 1973
- 345
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Impurity induced dielectric breakdown in SiO2| 1973
- 345
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Comparison of theory and expriment in LEED| 1973
- 345
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Ultrasmall planar superconductor devices| 1973
- 345
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In-depth profiles by Auger spectroscopy and secondary ion emission| 1973
- 345
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Thin films applications in high-frequency devices| 1973
- 345
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Photoemission from ultrathin films of Cu, Ni and Pd on Ag substrates| 1973
- 345
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Influence of electric fields on the agglomeration of discontinuous films| 1973
- 345
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Direct comparison of ion-neutralization and ultraviolet-photoemission spectroscopies| 1973
- 345
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Study of aluminium oxide films by ion induced x-rays and Rutherford back-scattering| 1973
- 345
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Surface ionization mass spectroscopy of airbone particulates| 1973
- 345
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Double beam VUV spectrometer and logarithmic ratiometer| 1973
- 345
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Scaling up from research and development to production of Ta2NMAu hybrids| 1973
- 345
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Bulklike films of bismuth-antimony alloys| 1973
- 345
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Investigation of tantalum-oxy-nitride thin-film resistor| 1973
- 345
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High spatial resolution, Auger electron spectroscopy| 1973
- 345
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Silicon-chromium thin-film resistor reliability| 1973
- 345
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Adsorbate-induced changes inoptical reflectance of metal surface in ultrahigh vacuum| 1973
- 345
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Electrode and substrate consideration in discontinuous thin film resistance| 1973
- 345
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High energy fine structure in the Auger spectra of silicon and silicon carbide| 1973
- 345
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Transport properties and switching mechanisms in NiO, NiO(Li), Nb2O5 and TiO2 thin films| 1973
- 345
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A new approach to the delayed dc ramp in the quadrupole mass filter| 1973
- 345
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Effects of impurities on the tunneling characteristics of superconducting junctions| 1973
- 345
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Preflashover anode species in an ultralight vacuum diode| 1973
- 345
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Field emission and photoemission surface studies| 1973
- 345
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Depolarization fields and phenomena in ferroelectric thin films| 1973
- 345
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Single-crystal films and development of active integrated optics| 1973
- 346
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Plasma silicon nitriding and iron boirding| 1973
- 346
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Ultratrace analyses of mixtures such as air/breath as biomedical tools| 1973
- 346
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Use of an automated (RGA) for thin film processes| 1973
- 346
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Advanced thin-film metallurgy for beam-leaded integrated circuits| 1973
- 346
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Application of thermal desorption methods in studies of catalysis: the oxidation of carbon monoxide on platinum| 1973
- 346
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A versatile vacuum induction furnace for unidirectional solidification studies| 1973
- 346
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Optical and photoelectric properties of phosphor-nickel thin films in relation to their structure| 1973
- 346
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UHV outgassing measurements on various carbons| 1973
- 346
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Membranes foir separation processes| 1973
- 346
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Kinetics of dissociative adsorption at a metal surface| 1973
- 346
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New developments in plasmare melting of metals and alloys| 1973
- 346
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Permentation and outgassing of vacuum materials| 1973
- 346
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Ordered adsorbed phases and heterogeneous catalysis| 1973
- 346
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Surface blistering of polycrystalline niobium by helium-ion implantation| 1973
- 346
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A spectroscopic monitor for sputter-etching processes| 1973
- 347
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Melting furnace with the rotarode nonconsumable electrode| 1973
- 347
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New methods for the arc fusion of titanium| 1973
- 347
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Test results of vacuum fusion using the durarc nonconsumable electrode| 1973