Journal of vacuum science and technology / B
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
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InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE 02B102Skierbiszewski, C et al. | 2012
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Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth 02B120Tex, David M et al. | 2012
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Dopant depletion in the near surface region of thermally prepared silicon (100) in UHV 021806Pitters, Jason L et al. | 2012
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Successful growth of Cu2Se-free CuGaSe2 by migration-enhanced epitaxy 02B126Fujita, Miki et al. | 2012
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Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodesMurray, L. M. / Norton, D. T. / Olesberg, J. T. et al. | 2012
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Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technologya)Kim, Ryoung-han / Watso, Robert / van Dommelen, Youri et al. | 2012
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Advanced nanodiamond emitter with pyramidal tip-on-pole structure for emission self-regulationWisitsora-at, Anurat / Hsu, Shao-Hua / Kang, Weng P. et al. | 2012
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Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxyOuyang, Lu / Steenbergen, Elizabeth H. / Zhang, Yong-Hang et al. | 2012
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Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxyLuna, E. / Hey, R. / Trampert, A. et al. | 2012
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Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxyStorm, D. F. / Meyer, D. J. / Katzer, D. S. et al. | 2012
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Electrical properties of C60 and Si codoped GaAs layersNishinaga, Jiro / Horikoshi, Yoshiji et al. | 2012
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InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectricsLin, C. A. / Huang, M. L. / Chiu, P.-C. et al. | 2012
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Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growthTex, David M. / Kamiya, Itaru et al. | 2012
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Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substratesVázquez-Cortés, D. / Cruz-Hernández, E. / Méndez-García, V. H. et al. | 2012
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Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer depositiona)Fang, R. C. / Wang, L. H. / Yang, W. et al. | 2012
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Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructureWatanabe, Kentaro / Ichikawa, Masakazu / Nakamura, Yoshiaki et al. | 2012
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Molecular beam epitaxy control and photoluminescence properties of InAsBiSvensson, S. P. / Hier, H. / Sarney, W. L. et al. | 2012
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Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)Dargis, Rytis / Arkun, Erdem / Clark, Andrew et al. | 2012
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Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiencyZhang, Wei / Nikiforov, A. Yu. / Thomidis, C. et al. | 2012
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CUMULATIVE AUTHOR INDEX| 2012
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Electronic & Optoelectronic Materials, Devices & Processing - Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment 021201Chen, C H et al. | 2012
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Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technology 021602Kim, Ryoung-han et al. | 2012
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Growth of GaNxASyP1-x-y alloys on GaP(100) by gas-source molecular beam epitaxy 02B121Kuang, Yan-Jin et al. | 2012
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Emission properties of carbon nanowalls on porous siliconEvlashin, Stanislav A. / Mankelevich, Yuri A. / Borisov, Vladimir V. et al. | 2012
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Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etchWeilnboeck, F. / Bartis, E. / Shachar, S. et al. | 2012
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Dopant depletion in the near surface region of thermally prepared silicon (100) in UHVPitters, Jason L. / Piva, Paul G. / Wolkow, Robert A. et al. | 2012
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Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy 02B113Storm, D F et al. | 2012
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InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics 02B118Lin, C A et al. | 2012
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Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy 02B122Fan, Jin et al. | 2012
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RHEED transients during InAs quantum dot growth by MBE 02B128Shimomura, K et al. | 2012
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Integrated processing of contrast pulse sequencing ultrasound imaging for enhanced active contrast of hollow gas filled silica nanoshells and microshells 02C104Ta, Casey N et al. | 2012
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Automating tumor classification with pixel-by-pixel contrast-enhanced ultrasound perfusion kinetics 02C103Ta, Casey N et al. | 2012
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Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy 02B108Luna, E et al. | 2012
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Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111) 02B110Dargis, Rytis et al. | 2012
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Morphology of inkjet printed 6,13 bis(tri-isopropylsilylethynyl) pentacene on surface-treated silica 021206Wang, Xiang Hua et al. | 2012
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Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface 02B112Martin, Andrew J et al. | 2012
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Lithography - Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy 021601Al-Ajlony, A et al. | 2012
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Nanoscale scratching of platinum thin films using atomic force microscopy with DLC tips 021605Jiang, Xiaohong et al. | 2012
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Microelectronic & Nanoelectronic Devices - Simulation of the electron field emission characteristics of a flat panel x-ray source 022201Posada, Chrystian M et al. | 2012
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Externally triggered on-demand drug release and deep tumor penetration 02C102Kong, Seong Deok et al. | 2012
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Process effects of copper film over a step etched with a plasma-based processLin, Chi-Chou / Kuo, Yue et al. | 2012
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Magnetophoretic assembly and printing of nanowiresWright, Andrew C. / Faulkner, Michael et al. | 2012
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Characterization of carbon nanotube film-silicon Schottky barrier photodetectorsAn, Yanbin / Rao, Hemant / Bosman, Gijs et al. | 2012
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Electron emission Si-based resonant-tunneling diodeEvtukh, A. / Litovchenko, V. / Goncharuk, N. et al. | 2012
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Erratum: "Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication" [J. Vac. Sci. Technol. B 29(6), 061604 (2011)] 023401Willem Tjerkstra, R et al. | 2012
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Plasmonics - Planar-localized surface plasmon resonance device by block-copolymer and nanoimprint lithography fabrication methods 026801Peter Yang, C Y et al. | 2012
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Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates 02B103Liu, Xinyu et al. | 2012
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Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE 02B115Tivakornsasithorn, K et al. | 2012
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First-principles study of field-emission from carbon nanotubes in the presence of methane 021803Kashefian Naieni, Ali et al. | 2012
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Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure 021802Watanabe, Kentaro et al. | 2012
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Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materialsYildirim, Asli / Prineas, John P. et al. | 2012
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Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surfaceMartin, Andrew J. / Saucer, Timothy W. / Sun, Kai et al. | 2012
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Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBETivakornsasithorn, K. / Pimpinella, R. E. / Nguyen, V. et al. | 2012
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MBE growth and characterization of Mn-doped InNChai, Jessica H. / Myers, Thomas H. / Song, Young-Wook et al. | 2012
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RHEED transients during InAs quantum dot growth by MBEShimomura, K. / Shirasaka, T. / Tex, D. M. et al. | 2012
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Integrated processing of contrast pulse sequencing ultrasound imaging for enhanced active contrast of hollow gas filled silica nanoshells and microshellsTa, Casey N. / Liberman, Alexander / Paul Martinez, H. et al. | 2012
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Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN 022205Magdenko, Liubov et al. | 2012
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Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer deposition 020602Fang, R C et al. | 2012
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Influence of hydrogen on the thermionic electron emission from nitrogen-incorporated polycrystalline diamond films 021202Paxton, W F et al. | 2012
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Molecular beam epitaxy control and photoluminescence properties of InAsBi 02B109Svensson, S P et al. | 2012
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Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency 02B119Zhang, Wei et al. | 2012
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Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates 02B125Vázquez-Cortés, D et al. | 2012
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Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatmentChen, C. H. / Yang, C. W. / Chiu, H. C. et al. | 2012
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Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopyAl-Ajlony, A. / Kanjilal, A. / Catalfano, M. et al. | 2012
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Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxyFan, Jin / Ouyang, Lu / Liu, Xinyu et al. | 2012
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Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates 02B107Steenbergen, Elizabeth H et al. | 2012
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Electrical properties and radiation detector performance of free-standing bulk n-GaN 021205Lee, In-Hwan et al. | 2012
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Electrical properties of C60 and Si codoped GaAs layers 02B116Nishinaga, Jiro et al. | 2012
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Morphology of inkjet printed 6,13 bis(tri-isopropylsilylethynyl) pentacene on surface-treated silicaWang, Xiang Hua / Xiong, Xian Feng / Qiu, Long Zhen et al. | 2012
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Behavioral model for electrical response and strain sensitivity of nanotube-based nanocomposite materialsAmini, Alborz / Bahreyni, Behraad et al. | 2012
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GaN surface electron field emission efficiency enhancement by low-energy photon illuminationEvtukh, Anatoli / Yilmazoglu, Oktay / Litovchenko, Vladimir et al. | 2012
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Erratum: “Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication” [Willem Tjerkstra, R. / Woldering, Léon A. / van den Broek, Johanna M. et al. | 2012
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Successful growth of Cu2Se-free CuGaSe2 by migration-enhanced epitaxyFujita, Miki / Sato, Tomohiro / Kitada, Tsuyoshi et al. | 2012
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Ultra-high vacuum deposition and characterization of silicon nitride thin filmsKatzer, D. S. / Meyer, D. J. / Storm, D. F. et al. | 2012
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Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wells 02B117Furuse, Shin-ichiro et al. | 2012
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MEMS & NEMS - Behavioral model for electrical response and strain sensitivity of nanotube-based nanocomposite materials 022001Amini, Alborz et al. | 2012
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Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaNMagdenko, Liubov / Patriarche, Gilles / Troadec, David et al. | 2012
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Planar-localized surface plasmon resonance device by block-copolymer and nanoimprint lithography fabrication methodsPeter Yang, C. Y. / Yang, Elaine L. / Steinhaus, Chip A. et al. | 2012
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Structural and luminescent properties of bulk InAsSbSarney, W. L. / Svensson, S. P. / Hier, H. et al. | 2012
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Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substratesSteenbergen, Elizabeth H. / Nunna, Kalyan / Ouyang, Lu et al. | 2012
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Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substratesCruz-Hernández, E. / Vázquez-Cortés, D. / Cisneros-de-la-Rosa, A. et al. | 2012
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Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxyKuang, Yan-Jin / Chen, San-Wen / Li, Hua et al. | 2012
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Optimization of Ohmic metal contacts for advanced GaAs-based CMOS deviceChang, W. H. / Chiang, T. H. / Lin, T. D. et al. | 2012
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Externally triggered on-demand drug release and deep tumor penetrationDeok Kong, Seong / Zhang, Weizhou / Hee Lee, Jun et al. | 2012
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Structural and magnetic characterization of superparamagnetic iron platinum nanoparticle contrast agents for magnetic resonance imagingTaylor, Robert M. / Huber, Dale L. / Monson, Todd C. et al. | 2012
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Influence of hydrogen on the thermionic electron emission from nitrogen-incorporated polycrystalline diamond filmsPaxton, W. F. / Howell, M. / Kang, W. P. et al. | 2012
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Work function extraction of metal gates with alternate channel materialsCoan, Mary / Johnson, Derek / Hwan Woo, Jung et al. | 2012
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Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substratesLiu, Xinyu / Smith, David J. / Cao, Helin et al. | 2012
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Electron emission Si-based resonant-tunneling diode 022207Evtukh, A et al. | 2012
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Special Issue: Nanoscience in Cancer Research - Structural and magnetic characterization of superparamagnetic iron platinum nanoparticle contrast agents for magnetic resonance imaging 02C101Taylor, Robert M et al. | 2012
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PAPERS FROM THE 28TH NORTH AMERICAN MOLECULAR BEAM EPITAXY CONFERENCE - Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit 02B101Hoke, W E et al. | 2012
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Growth of GaSb1-xBix by molecular beam epitaxy 02B114Song, Yuxin et al. | 2012
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Magnetophoretic assembly and printing of nanowires 021603Wright, Andrew C et al. | 2012
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Characterization of carbon nanotube film-silicon Schottky barrier photodetectors 021805An, Yanbin et al. | 2012
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Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments 022203Krzeminski, Christophe D et al. | 2012
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Advanced nanodiamond emitter with pyramidal tip-on-pole structure for emission self-regulation 022204Wisitsora-at, Anurat et al. | 2012
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GaN surface electron field emission efficiency enhancement by low-energy photon illumination 022206Evtukh, Anatoli et al. | 2012
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AUTHOR INDEX| 2012
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Structural and luminescent properties of bulk InAsSb 02B105Sarney, W L et al. | 2012
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Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes 021203Murray, L M et al. | 2012
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Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates 02B111Cruz-Hernández, E et al. | 2012
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100 keV electron backscattered range and coefficient for silicon 021604Czaplewski, David A et al. | 2012
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Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch 021804Weilnboeck, F et al. | 2012
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Work function extraction of metal gates with alternate channel materials 022202Coan, Mary et al. | 2012
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Application of GaInNAs for the gain medium of a photonic crystal microcavity 02B127Nagatomo, H et al. | 2012
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Nanoscale scratching of platinum thin films using atomic force microscopy with DLC tipsJiang, Xiaohong / Wu, Guoyun / Du, Zuliang et al. | 2012
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First-principles study of field-emission from carbon nanotubes in the presence of methaneKashefian Naieni, Ali / Yaghoobi, Parham / Nojeh, Alireza et al. | 2012
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Simulation of the electron field emission characteristics of a flat panel x-ray sourcePosada, Chrystian M. / Castaño, Carlos H. / Grant, Edwin J. et al. | 2012
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InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBEa)Skierbiszewski, C. / Siekacz, M. / Turski, H. et al. | 2012
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Automating tumor classification with pixel-by-pixel contrast-enhanced ultrasound perfusion kineticsTa, Casey N. / Kono, Yuko / Barback, Christopher V. et al. | 2012
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Ultra-high vacuum deposition and characterization of silicon nitride thin films 02B129Katzer, D S et al. | 2012
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Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7-4.9 μm infrared materials 02B104Yildirim, Asli et al. | 2012
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Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layersJeon, Joon-Woo / Yum, Woong-Sun / Seong, Tae-Yeon et al. | 2012
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Electrical properties and radiation detector performance of free-standing bulk n-GaNLee, In-Hwan / Polyakov, A. Y. / Smirnov, N. B. et al. | 2012
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Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuitHoke, W. E. / Chelakara, R. V. / Bettencourt, J. P. et al. | 2012
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Growth of GaSb1−xBix by molecular beam epitaxySong, Yuxin / Wang, Shumin / Saha Roy, Ivy et al. | 2012
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Letters - Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers 020601Jeon, Joon-Woo et al. | 2012
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Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy 02B106Ouyang, Lu et al. | 2012
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Process effects of copper film over a step etched with a plasma-based process 021204Lin, Chi-Chou et al. | 2012
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Nanometer Science & Technology - Emission properties of carbon nanowalls on porous silicon 021801Evlashin, Stanislav A et al. | 2012
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Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device 02B123Chang, W H et al. | 2012
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MBE growth and characterization of Mn-doped InN 02B124Chai, Jessica H et al. | 2012
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100 keV electron backscattered range and coefficient for siliconCzaplewski, David A. / Ocola, Leonidas E. et al. | 2012
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Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experimentsKrzeminski, Christophe D. et al. | 2012
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Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wellsFuruse, Shin-ichiro / Sumiya, Kengo / Morifuji, Masato et al. | 2012
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Application of GaInNAs for the gain medium of a photonic crystal microcavityNagatomo, H. / Kukita, K. / Goto, H. et al. | 2012