IEEE transactions on electron devices
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 4907
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Noise-Current Correlations in InAs/GaSb Type-II Superlattice Midwavelength Infrared DetectorsCiura, Lukasz / Kolek, Andrzej / Jurenczyk, Jaroslaw et al. | 2016
- 4556
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Changes in the Editorial BoardGhione, Giovanni / Iniguez, Benjamin / Rajan, Siddharth et al. | 2016
- 4557
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Kudos to Our ReviewersGhione, Giovanni et al. | 2016
- 4558
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Golden List of Reviewers for 2016| 2016
- 4591
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Single Transistor-Based Methods for Determining the Base Resistance in SiGe HBTs: Review and Evaluation Across Different TechnologiesPawlak, Andreas / Krause, Julia / Wittkopf, Holger et al. | 2016
- 4603
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RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS TransistorsTsai, Hung-Chih / Liou, Ruey-Hsin / Lien, Chenhsin et al. | 2016
- 4610
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Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology NodesLee, Junsoo / Kim, Youngmin / Cho, Seongjae et al. | 2016
- 4617
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3-D Quasi-Atomistic Model for Line Edge Roughness in Nonplanar MOSFETsOh, Sangheon / Shin, Changhwan et al. | 2016
- 4624
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TCAD-Based Predictive NBTI Framework for Sub-20-nm Node Device Design ConsiderationsMishra, Subrat / Wong, Hiu Yung / Tiwari, Ravi et al. | 2016
- 4632
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Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching 1 \times 10^ Ohm-cm2Yu, Hao et al. | 2016
- 4632
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Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching 1 × 10^—^9 Ohm-cm^2Yu, H. / Schaekers, M. / Peter, A. et al. | 2016
- 4632
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Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2Yu, Hao / Schaekers, Marc / Peter, Anthony et al. | 2016
- 4642
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Chord-Fractal Capacitor in CMOS TechnologyChien, Chun-Tsai / Hsu, Heng-Ming et al. | 2016
- 4647
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V2O5 MISFETs on H-Terminated DiamondVerona, Claudio / Ciccognani, Walter / Colangeli, Sergio et al. | 2016
- 4647
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V.sub.2O.sub.5 MISFETs on H-terminated diamondVerona, Claudio et al. | 2016
- 4654
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Transient and Static Hybrid-Triggered Active Clamp Design for Power-Rail ESD ProtectionLu, Guangyi / Wang, Yuan / Zhang, Xing et al. | 2016
- 4661
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A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary EffectXiao, Ying / Lin, Xinnan / Lou, Haijun et al. | 2016
- 4668
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Sub-0.2 V Impact Ionization in Si n-i-p-i-n DiodeDas, Bhaskar / Sushama, Sushama / Schulze, Jorg et al. | 2016
- 4674
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Circuit Level Layout Optimization of MOS Transistor for RF and Noise Performance ImprovementsJeon, Jongwook / Kang, Myounggon et al. | 2016
- 4678
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Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device PerformanceSaeidi, Ali / Jazaeri, Farzan / Stolichnov, Igor et al. | 2016
- 4685
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Quasi-Ballistic $\Gamma $ - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETsCaruso, Enrico / Palestri, Pierpaolo / Lizzit, Daniel et al. | 2016
- 4685
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Quasi-Ballistic Γ- and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETsCaruso, E. / Palestri, P. / Lizzit, D. et al. | 2016
- 4693
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Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTsDutta, Gourab / DasGupta, Nandita / DasGupta, Amitava et al. | 2016
- 4693
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Low-temperature ICP-CVD SiN.sub.x as gate dielectric for GaN-based MIS-HEMTsDutta, Gourab et al. | 2016
- 4702
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The Role of Barrier Transport and Traps in the Tradeoff Between Low OFF-State Leakage Current and Improved Dynamic Stability of AlGaN/GaN HFETsMehari, Shlomo / Gavrilov, Arkady / Eizenberg, Moshe et al. | 2016
- 4707
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An Analytical Model of MOS Admittance for Border Trap Density Extraction in High- $k$ Dielectrics of III–V MOS DevicesVais, Abhitosh / Martens, Koen / Lin, Dennis et al. | 2016
- 4714
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Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47AsDo, Huy Binh / Luc, Quang Ho / Ha, Minh Thien Huu et al. | 2016
- 4720
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Electrothermal Characterization in 3-D Resistive Random Access Memory ArraysLuo, Yandong / Chen, Wenchao / Cheng, Mingzhuo et al. | 2016
- 4729
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Finite Element Modeling of Fowler–Nordheim Program-Erase Process in High- $k$ Interpoly Dielectric Flash MemoriesMahajan, Ashutosh / Gawhane, Dhiraj / Patrikar, Rajendra et al. | 2016
- 4737
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Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide ElectrodePan, Chih-Hung / Chang, Ting-Chang / Tsai, Tsung-Ming et al. | 2016
- 4744
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Correlated Material Enhanced SRAMs With Robust Low Power OperationSrinivasa, Srivatsa / Aziz, Ahmedullah / Shukla, Nikhil et al. | 2016
- 4753
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Cycling-Induced Charge Trapping/Detrapping in Flash Memories—Part I: Experimental EvidenceResnati, Davide / Nicosia, Gianluca / Paolucci, Giovanni M. et al. | 2016
- 4761
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Cycling-Induced Charge Trapping/Detrapping in Flash Memories—Part II: ModelingResnati, Davide / Nicosia, Gianluca / Paolucci, Giovanni M. et al. | 2016
- 4769
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Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access MemoryChen, Po-Hsun / Chang, Ting-Chang / Chang, Kuan-Chang et al. | 2016
- 4776
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A Thin-Film Transistor With High Drain Current Induced by a Trap-Assisted Electric Double LayerGangwar, Ankita / Mazhari, Baquer et al. | 2016
- 4782
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Drain Current Response to Fast Illumination Pulse for Amorphous In–Ga–Zn-O Thin-Film TransistorsTai, Ya-Hsiang / Chang, Chun-Yi / Chan, Po-Chun et al. | 2016
- 4788
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Si Heterojunction Solar Cells: A Simulation Study of the Design IssuesIslam, Raisul / Nazif, Koosha Nassiri / Saraswat, Krishna C. et al. | 2016
- 4796
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Stress Engineering During the Fabrication of InGaN/GaN Vertical Light Emitting Diodes for Reducing the Quantum Confined Stark EffectKi, Paulo / Jiang, Quanzhong / Wang, Wang N. et al. | 2016
- 4802
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Amorphous InSnZnO Thin-Film Transistor Voltage-Mode Active Pixel Sensor Circuits for Indirect X-Ray ImagersCheng, Mao-Hsun / Zhao, Chumin / Huang, Che-Lin et al. | 2016
- 4811
-
Superlattice Barrier HgCdTe nBn Infrared Photodetectors: Validation of the Effective Mass ApproximationDehdashti Akhavan, Nima / Umana-Membreno, Gilberto A. / Gu, Renjie et al. | 2016
- 4819
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Thermal Effects on LED Lamp With Different Thermal Interface MaterialsTang, Yunqing / Liu, Dongjing / Yang, Haiying et al. | 2016
- 4825
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Extraction of Maximum Power From a PV Array Under Nonuniform Irradiation ConditionsSahu, Himanshu Sekhar / Nayak, Sisir Kumar et al. | 2016
- 4832
-
Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED DisplaysZhang, Ke / Peng, Deng / Chong, Wing Cheung et al. | 2016
- 4839
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Testing and Analysis of Boron-Doped Aluminum Nitride Thin-Film-Coated Al as Thermal Substrates in PCB Fabrication for LED ApplicationSubramani, Shanmugan / Devarajan, Mutharasu et al. | 2016
- 4845
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Quantitative Correlation Between Fabrication Precision and Device Homogeneity of Single-Photon Avalanche DiodesSong, Hai-Zhi / Deng, Jie / Dai, Qian et al. | 2016
- 4852
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An Extended Design Methodology for LED Lighting Systems Including Lifetime EstimationGuisso, Ronaldo Antonio / Righi, Matheus Farencena / Mineiro Sa, Edilson et al. | 2016
- 4860
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Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on SiliconTao, Ming / Wang, Maojun / Liu, Shaofei et al. | 2016
- 4865
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Theoretical Analyses of Complete 3-D Reduced Surface Field LDMOS With Folded-Substrate Breaking Limit of Superjunction LDMOSCao, Zhen / Duan, Baoxing / Cai, Hai et al. | 2016
- 4873
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High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- \mu \text -Thin SOI Layer for Reducing the Forward Voltage DropZhu, Jing et al. | 2016
- 4873
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High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5-μm-Thin SOI Layer for Reducing the Forward Voltage DropZhu, J. / Yang, Z. / Sun, W. et al. | 2016
- 4873
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High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- $\mu \text{m}$ -Thin SOI Layer for Reducing the Forward Voltage DropZhu, Jing / Yang, Zhuo / Sun, Weifeng et al. | 2016
- 4880
-
Electrical Characterization of Coaxial Silicon–Insulator–Silicon Through-Silicon Vias: Theoretical Analysis and ExperimentsChen, Zhiming / Xiong, Miao / Li, Bohao et al. | 2016
- 4888
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Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of GermanateCheng, Zhi-Xiang / Liu, Lu / Xu, Jing-Ping et al. | 2016
- 4893
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Plant-Based Completely Biodegradable Printed Circuit BoardsGuna, Vijay Kumar / Murugesan, Geethapriya / Basavarajaiah, Bhuvaneswari Hulikal et al. | 2016
- 4899
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Transport Phenomenon in Boron–GroupV Linear Atomic Chains Under Tensile Stress for Nanoscale Devices and Interconnects: First Principles AnalysisSanthiBhushan, Boddepalli / Srivastava, Anurag / Khan, Mohammad Shahzad et al. | 2016
- 4913
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Characterization and Modeling of NBTI in Nanoscale UltraThin Body UltraThin Box FD-SOI MOSFETsKaratsori, Theano A. / Theodorou, Christoforos G. / Haendler, Sebastien et al. | 2016
- 4919
-
Numerical Capacitance Analysis of Single-Layer OLEDs Based on the Master EquationZhou, Weifeng / Zimmermann, Christoph / Jungemann, Christoph et al. | 2016
- 4924
-
Generalized Compact Modeling of Nanoparticle-Based Amperometric Glucose BiosensorsJin, Xin / Fisher, Timothy S. / Alam, Muhammad Ashraful et al. | 2016
- 4933
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Voltage Controlled Rupturing of TiO2 Nanotubes for Gas Sensor Device Applications: Correlation With Surface and Edge EnergyDutta, K. / Chattopadhyay, P. P. / Bhattacharyya, Partha et al. | 2016
- 4933
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Voltage controlled rupturing of TiO.SUB.2 nanotubes for gas sensor device applications: correlation with surface and edge energyDutta, K et al. | 2016
- 4939
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Analysis of Multipactor RF Breakdown in a Waveguide Containing a Transversely Magnetized FerriteGonzalez-Iglesias, Daniel / Gomez, Alvaro / Gimeno, Benito et al. | 2016
- 4948
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Thermomechanical Fatigue in Sub-THz Vacuum Electron DevicesGamzina, Diana / Ravani, Bahram et al. | 2016
- 4955
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Study of a 0.2-THz Extended Interaction Oscillator Driven by a Pseudospark-Sourced Sheet Electron BeamShu, Guoxiang / He, Wenlong / Zhang, Liang et al. | 2016
- 4961
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Large-Signal 2.5-D Steady-State Beam-Wave Interaction Simulation of Folded-Waveguide Traveling-Wave TubesMeyne, Sascha / Bernadi, Pierre / Birtel, Philip et al. | 2016
- 4968
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Relativistic Second-Harmonic Gyrotron With a Selective Quasi-Regular CavityKalynov, Yuriy K. / Osharin, Ivan V. / Savilov, Andrey V. et al. | 2016
- 4975
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Study and Development of Yttrium-Doped Nanoscandate Cathode for High-Power VEDsShukla, S. K. / Singh, A. K. / Singh, T. P. et al. | 2016
- 4981
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Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model DescriptionPahwa, Girish / Dutta, Tapas / Agarwal, Amit et al. | 2016
- 4986
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Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model ValidationPahwa, Girish / Dutta, Tapas / Agarwal, Amit et al. | 2016
- 4993
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A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling DiodesZhang, W-D. / Brown, E. R. / Growden, T. A. et al. | 2016
- 4998
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Junctionless Poly-Si Nanowire Transistors With Low-Temperature Trimming Process for Monolithic 3-D IC ApplicationLin, Jer-Yi / Kuo, Po-Yi / Lin, Ko-Li et al. | 2016
- 5004
-
Training a Probabilistic Graphical Model With Resistive Switching Electronic SynapsesEryilmaz, Sukru Burc / Neftci, Emre / Joshi, Siddharth et al. | 2016
- 5012
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Comparative Analysis of Projected Tunnel and CMOS Transistors for Different Logic Application AreasNunez, Juan / Avedillo, Maria J. et al. | 2016
- 5021
-
Potential and Drain Current Modeling of Gate-All-Around Tunnel FETs Considering the Junctions Depletion Regions and the Channel Mobile Charge CarriersTajik Khaveh, Hamid Reza / Mohammadi, Saeed et al. | 2016
- 5030
-
Vertical Tunnel FET: Design Optimization With Triple Metal-Gate LayersKo, Eunah / Lee, Hyunjae / Park, Jung-Dong et al. | 2016
- 5036
-
Experimental $I$ – $V(T)$ and $C$ – $V$ Analysis of Si Planar p-TFETs on Ultrathin BodyLiu, Chang / Han, Qinghua / Glass, Stefan et al. | 2016
- 5041
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Design of High-Performance InAs–Si Heterojunction 2D–2D Tunnel FETs With Lateral and Vertical Tunneling PathsCarrillo-Nunez, Hamilton / Luisier, Mathieu / Schenk, Andreas et al. | 2016
- 5048
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Design for Variation-Immunity in Sub-10-nm Stacked-Nanowire FETs to Suppress LER-induced Random VariationsPark, Jinyoung / Lee, Hyunjae / Oh, Sangheon et al. | 2016
- 5055
-
A Novel Gate-Stack-Engineered Nanowire FET for Scaling to the Sub-10-nm RegimeSahay, Shubham / Kumar, Mamidala Jagadesh et al. | 2016
- 5060
-
Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature ProcessLu, Chih-Hung / Hou, Tuo-Hung / Pan, Tung-Ming et al. | 2016
- 5064
-
Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic SystemsWoo, Jiyong / Moon, Kibong / Song, Jeonghwan et al. | 2016
- 5068
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Impact of Channel Hot Carrier Effect in Junction-and Doping-Free Devices and CircuitsPanchore, Meena / Singh, Jawar / Mohanty, Saraju P. et al. | 2016
- 5072
-
A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing ReductionWu, Chunlei / Huang, Qianqian / Zhao, Yang et al. | 2016
- 5077
-
Comment on “Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening”Padilla, J. L. / Palomares, A. / Gamiz, F. et al. | 2016
- 5079
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2016 Index IEEE Transactions on Electron Devices Vol. 63| 2016
- C1
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Table of contents| 2016
- C2
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IEEE Transactions on Electron Devices publication information| 2016
- C3
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IEEE Transactions on Electron Devices information for authors| 2016