InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques (English)
- New search for: Hasenberg, T. C.
- New search for: Chen, P.
- New search for: Madhukar, A.
- New search for: Kost, A. R.
- New search for: Hasenberg, T. C.
- New search for: Chen, P.
- New search for: Madhukar, A.
- New search for: Kost, A. R.
- New search for: Hiyamizu, S.
- New search for: Shiraki, Y.
- New search for: Gonda, S.
In:
Molecular beam epitaxy
2
;
1368-1374
;
1995
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ISSN:
- Conference paper / Print
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Title:InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques
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Contributors:Hasenberg, T. C. ( author ) / Chen, P. ( author ) / Madhukar, A. ( author ) / Kost, A. R. ( author ) / Hiyamizu, S. / Shiraki, Y. / Gonda, S.
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Conference:8th International conference, Molecular beam epitaxy ; 1994 ; Toyonaka; Japan
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Published in:Molecular beam epitaxy , 2 ; 1368-1374JOURNAL OF CRYSTAL GROWTH ; 150, 2 ; 1368-1374
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Publisher:
- New search for: North-Holland
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Publication date:1995-01-01
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Size:7 pages
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Remarks:In 2 pts; Also known as MBE-VIII
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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