Properties of Silicon-on-Defect-Layer Material (English)
- New search for: Li, J.
- New search for: Jones, K. W.
- New search for: Coleman, J. H.
- New search for: Yi, J.
- New search for: Li, J.
- New search for: Jones, K. W.
- New search for: Coleman, J. H.
- New search for: Yi, J.
- New search for: Poker, D. B.
In:
Ion-solid interactions for materials modification and processing
;
745-750
;
1996
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ISBN:
- Conference paper / Print
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Title:Properties of Silicon-on-Defect-Layer Material
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Contributors:Li, J. ( author ) / Jones, K. W. ( author ) / Coleman, J. H. ( author ) / Yi, J. ( author ) / Poker, D. B.
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Conference:Symposium, Ion-solid interactions for materials modification and processing ; 1995 ; Boston; MA
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Published in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 396 ; 745-750
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Publisher:
- New search for: Materials Research Society
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Place of publication:Pittsburgh
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Publication date:1996-01-01
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Size:6 pages
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Remarks:Held as symposium A of the 1995 MRS Fall meeting
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Surface Effects During Ion Beam Processing of MaterialsAverback, R. S. / Ghaly, M. / Zhu, H. / Caturla, M. J. et al. | 1996
- 15
-
New Insight into Damage-Related Phenomena in Si Implanted Under Extreme ConditionsHolland, O. W. / Nielsen, B. / Budai, J. D. et al. | 1996
- 21
-
Dependence on Collision Time of Particle Ejection of Atom-Bombarded Single-Crystal SurfacesChang, C.-C. / Wang, S.-W. et al. | 1996
- 27
-
Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide LayersMorris, S. / Lim, D. / Yang, S.-H. / Tian, S. et al. | 1996
- 33
-
Tight-Binding Molecular Dynamics Simulations on Point Defects Diffusion and Interactions in Crystalline SiliconTang, M. / Colombo, L. / Diaz De la Rubia, T. et al. | 1996
- 39
-
A Molecular Dynamics Simulation Study of Defect Production in VanadiumMorishita, K. / Diaz De la Rubia, T. et al. | 1996
- 45
-
Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in SiliconCaturla, M.-J. / Diaz De la Rubia, T. / Jaraiz, M. / Gilmer, G. H. et al. | 1996
- 51
-
Depth Profiles of Medium Energy Phosphorus Implants into SiliconLavine, J. P. / Zheng, L. / Whalen, P. M. / Downey, D. F. et al. | 1996
- 57
-
In-Situ HVEM Studies of Radiation-Induced Segregation in Ni-Al Alloys During Simultaneous Irradiation with Electrons and IonsGiacobbe, M. J. / Lam, N. Q. / Okamoto, P. R. / Stubbins, J. F. et al. | 1996
- 63
-
The Ionization Degree of Ar Atoms Single Scattered from Pure Metal and Alloy SurfacesAbdulkasimov, F. B. / Ferleger, V. K. et al. | 1996
- 71
-
Role of Interface in Ion Mixing or Thermal Annealing Induced Amorphization in Multilayers in Some Immiscible SystemsLiu, B. X. / Zhang, Z. J. / Jin, O. / Pan, F. et al. | 1996
- 83
-
Ion Beam Mixing in Insulator SubstratesMcHargue, C. J. et al. | 1996
- 95
-
Enhancement of the Adhesion of Beryllium Films with Interfacial BeO to Carbon SubstratesMusket, R. G. / Wirtenson, O. R. et al. | 1996
- 101
-
Search for Ion Induced Mixing in Ceramic-Ceramic SystemsPadmanabhan, K. R. et al. | 1996
- 107
-
Examination of Interface Roughening in Ion Irradiated Cu/Nb Films by Computer Simulation and by X-ray DiffractionPartyka, P. J. / Averback, R. S. / Robinson, I. K. / Lee, Y. S. et al. | 1996
- 113
-
Irradiation Mixing of Al into U~3SiBirtcher, R. C. / Ding, F.-R. / Kestel, B. J. / Baldo, P. M. et al. | 1996
- 119
-
Modification of the Structure-Phase State of Coatings by Ion Implantation TechniquesKorotaev, A. D. / Tyumentsev, A. N. / Pinzhin, Y. P. / Safarov, A. F. et al. | 1996
- 127
-
Damage in Refractory Oxides and Ion Beam Mixing at Metal-Oxide Interfaces Induced by GeV Ions and 20 MeV Cluster BeamThevenard, P. A. / Beranger, M. / Canut, B. / Ramos, S. M. M. et al. | 1996
- 137
-
Cantilever Beam Stress Measurements During Ion IrradiationVan Sambeek, A. I. / Averback, R. S. et al. | 1996
- 143
-
Sputter Roughening Instability on the Ge(001) Surface: Energy and Flux DependenceChason, E. / Mayer, T. M. / Kellerman, B. K. et al. | 1996
- 149
-
Lateral Sputtering by Gas Cluster Ion Beams and its Applications to Atomic Level Surface ModificationYamada, I. / Matsuo, J. et al. | 1996
- 155
-
Growth of Vacancy Clusters During Post-Irradiation Annealing of Ion Implanted SiliconVan Veen, A. / Schut, H. / Rivera, A. / Fedorov, A. V. et al. | 1996
- 161
-
In Situ Ion Beam Analysis of Radiation Damage Kinetics in MgTiO~3 Single Crystals at 170-470 KYu, N. / Mitchell, J. N. / Sickafus, K. E. / Hastasi, M. et al. | 1996
- 167
-
Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in SiliconDokumaci, O. / Law, M. E. / Krishnamoorthy, V. / Jones, K. S. et al. | 1996
- 173
-
A Comparative Study of Radiation Damage in Al~2O~3, FeTiO~3, and MgTiO~3Mitchell, J. N. / Yu, N. / Sickafus, K. E. / Nastasi, M. et al. | 1996
- 179
-
Effect of Cascade Remnants on Freely Migrating Defects in Cu - 1% Au AlloysIwase, A. / Rehn, L. E. / Baldo, P. M. / Funk, L. et al. | 1996
- 185
-
Interaction of Alpha Particle Beams With Fe-Based and FeNi-Based Glassy FerromagnetsSorescu, M. / Barb, D. et al. | 1996
- 191
-
Effects of High Energy Ion Irradiation on Crystallization of Amorphous Germanium Films Deposited on Calcium Fluoride SubstratesNakao, S. / Saitoh, K. / Ikeyama, M. / Niwa, H. et al. | 1996
- 195
-
Effects of Ion Beam Irradiation on the Crystallization of Copper FilmsHishita, S. / Oyeshi, K. / Suehara, S. / Aizawa, T. et al. | 1996
- 201
-
Molecular Dynamics Studies of the Ion Beam Induced Crystallization in SiliconMarques, L. A. / Caturla, H.-J. / Huang, H. / Diaz De la Rubia, T. et al. | 1996
- 207
-
Growth of Si~1~-~xSn~x Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (IBIEC) and Solid Phase Epitaxial Growth (SPEG)Kobayashi, N. / Hasegawa, M. / Hayashi, N. / Katsumata, H. et al. | 1996
- 215
-
Optical Switching of Coherent VO~2 Precipitates Embedded in SapphireGea, L. A. / Boatner, L. A. / Budai, J. D. / Zuhr, R. A. et al. | 1996
- 221
-
Study of Diamond Nucleation on Silicon Using Direct Negative Carbon Ion Beam SourceKo, Y. W. / Ahn, Y. O. / Sohn, M. H. / Park, Y. et al. | 1996
- 227
-
Structural Disorder in Hard Amorphous Carbon Films Implanted With Nitrogen IonsFreire, F. L. / Franceschini, D. F. / Achete, C. A. / Brusa, R. S. et al. | 1996
- 233
-
Scanning Tunneling Microscopy and Atomic Force Microscopy of Au Implanted in Highly Oriented Pyrolytic GraphiteTung, Y. S. / Ueda, A. / Henderson, D. O. / Mu, R. et al. | 1996
- 239
-
Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon CarbideSuvorov, A. V. / Usov, I. O. / Sokolov, V. V. / Suvorova, A. A. et al. | 1996
- 243
-
Modification of Magnetron Sputtered a-Si~1~-~xC~x:H Films by Implantation of Sn^+Tzenov, N. / Dimova-Malinovska, D. / Tsvetkova, T. et al. | 1996
- 249
-
Formation of Ultra-Thin Silicon Oxynitride Films by Low-Energy Nitrogen ImplantationDiniz, J. A. / Tatsch, P. J. / Kretly, L. C. / Queiroz, J. E. C. et al. | 1996
- 255
-
Carbon Nitride (CN~x) Films Formed by Ion Implantation into Thin Carbon FilmsHusein, I. F. / Zhou, Y. / Chan, C. / Kleiman, J. I. et al. | 1996
- 261
-
The Improvement of Mechanical Properties of Aluminum Nitride and Alumina by 1 keV Ar^+ Ion Irradiation in Reactive Gas EnvironmentKoh, S. K. / Son, Y.-B. / Gam, J.-S. / Kim, C.-J. et al. | 1996
- 267
-
A Novel Etching Method of Single Crystalline Al~2O~3 Film on Si and Sapphire Using Si Ion ImplantationKim, H. / Ishida, M. / Nakamura, T. et al. | 1996
- 273
-
Ion Induced Damage and Their Annealing in LiTaO~3 Single CrystalZhang, Z. / Rusakova, I. A. / Chu, W. K. et al. | 1996
- 279
-
Bombarding Effects of Gas Cluster Ion Beams on Sapphire Surfaces; Characteristics of Modified Layers and their Mechanical and Optical PropertiesTakeuchi, D. / Matsuo, J. / Yamada, I. et al. | 1996
- 285
-
Deposition of Lead-Silicate Glassy Thin Coatings by RF Magnetran Sputtering: Correlation Between Deposition Parameters and Electrical and Structural PropertiesRigato, V. / Maggioni, G. / Boscarino, D. / Della Mea, G. et al. | 1996
- 291
-
Persistent Photoconductivity Study on Ion Irradiated Carbon FilmsBhattacharyya, S. / Kanjilal, D. / Subramanyam, S. V. et al. | 1996
- 299
-
Modification of the Wettability of Plexiglas and Carbon by Means of Ion Beam Implantation: Application to Fluid Management and Materials Processing in MicrogravityFageau, J. F. / Ross, G. G. / Couture, E. / Poirier, A. et al. | 1996
- 305
-
Versatile Applications of Ion Implanted PolymersGiedd, R. E. / Wang, Y. Q. / Moss, M. G. / Kaufmann, J. et al. | 1996
- 311
-
Proton Modification of Ultra High Molecular Weight Polyethylene to Promote Crosslinking for Enhanced Chemical and Physical PropertiesWilson, J. F. / Liu, J. R. / Romero-Borja, F. / Chu, W. K. et al. | 1996
- 317
-
Structuring of Conducting Polymers by Ion ImplantationEdinger, K. / Schiestel, S. / Wolf, G. K. et al. | 1996
- 323
-
Ion Beam Modification of PVDC and PE PolymersEvelyn, A. L. / Ila, D. / Fisher, J. / Poker, D. B. et al. | 1996
- 329
-
Suspended Conductive Polymer Bridges from Ion Implanted PolymersKaufmann, J. / Moss, M. G. / Wang, Y. / Giedd, R. E. et al. | 1996
- 335
-
Improving Adhesion of Polytetrafluoroethylene to Aluminum, Copper, and an Adhesive by Ar^+ Irradiation with and without Oxygen EnvironmentKoh, S.-K. / Park, S.-C. / Choi, C.-K. / Song, S.-K. et al. | 1996
- 341
-
Changes of Wettability and Surface Energy of Polymer by keV Ar^+ Ion IrradiationCho, J.-S. / Choi, W.-K. / Ki Hyun Yoon / Jung, H.-J. et al. | 1996
- 347
-
Chemical Reaction Between Polymers (PC, PMMA, and PET) and Oxygen Gas During Ar^+ IrradiationPark, S.-C. / Jung, H.-J. / Koh, S.-K. et al. | 1996
- 355
-
Structural and Optical Properties of Rare-Earth Doped Lithium Niobate Waveguides Formed by MeV Helium ImplantationHerreros, B. / Lifante, G. / Cusso, F. / Kling, A. et al. | 1996
- 361
-
Loss Measurements of Stoichiometric Ti and O Implanted LiNbO~3 WaveguidesWilliams, E. K. / Ila, D. / Sarkisov, S. / Venkateswarlu, P. et al. | 1996
- 365
-
Defect Creation by Electronic Processes in MgO Bombarded With GeV Heavy IonsBeranger, M. / Thevenard, P. / Brenier, R. / Balanzat, E. et al. | 1996
- 371
-
MeV Ion Beam Induced Index of Refraction Changes in Layered GaAs/AlGaAs WaveguidesTaylor, T. / Ila, D. / Zimmerman, R. L. / Ashley, P. R. et al. | 1996
- 377
-
Nanocrystals and Quantum Dots Formed by High-Dose Ion ImplantationWhite, C. W. / Budai, J. D. / Zhu, J. G. / Withrow, S. P. et al. | 1996
- 385
-
Silver Cluster Formation in Implanted Al~2O~3 Single CrystalsFreire, F. L. / Broll, N. / Mariotto, G. et al. | 1996
- 391
-
Optical Properties of Multi-Component Antimony-Silver Nanoclusters Formed in Silica by Sequential Ion ImplantationZuhr, R. A. / Magruder, R. H. / Anderson, T. S. et al. | 1996
- 397
-
The Role of Glass Structure in the Formation of Implanted Gold Nanoclusters for Enhanced Nonlinear Optical PropertiesArnold, G. W. / Battaglin, G. / Boscolo-Boscoletto, A. / Mazzoldi, P. et al. | 1996
- 403
-
Nanocrystal Formation via Yttrium Ion Implantation into SapphireHunt, E. M. / Hampikian, J. M. / Poker, D. B. et al. | 1996
- 411
-
Optical and Magnetic Properties of Silica Implanted with N^+ and Fe^+Isobe, T. / Weeks, R. A. / Zuhr, R. A. et al. | 1996
- 417
-
Waveguide Formation in Silica by Implantation with Si, P and Ge IonsLeech, P. W. / Ridgway, M. C. et al. | 1996
- 423
-
Ion Beam-Induced Changes in Optical Properties of MgOQian, Y. / Ila, D. / He, K. X. / Curley, M. et al. | 1996
- 429
-
Proton Induced Defect Formation in Quartz GlassesGulamova, R. R. / Gasanov, E. M. / Alimov, R. et al. | 1996
- 435
-
Ion-Beam-Assisted Deposition of Metal Nanocluster Thin Films with Nonlinear Optical PropertiesCotell, C. M. / Carosella, C. A. / Flom, S. R. / Schiestel, S. et al. | 1996
- 441
-
Vibrational and Electronic Transition in Inks Quantum Dots Formed by Sequential Implantation of In and As in a-SiO~2Ueda, A. / Henderson, D. O. / Mu, R. / Tung, Y.-S. et al. | 1996
- 447
-
Synthesis and Properties of GaAs Nanocrystals in SiO~2 Formed by Ion ImplantationZhu, J. G. / White, C. W. / Wallis, D. J. / Budai, J. D. et al. | 1996
- 455
-
Materials Science Issues of Plasma Source Ion ImplantationNastasi, M. / Elmoursi, A. A. / Faehl, R. J. / Hamdi, A. H. et al. | 1996
- 467
-
New Developments in Metal Ion Implantation by Vacuum Arc Ion Sources and Metal Plasma ImmersionBrown, I. G. / Anders, A. / Anders, S. / Dickinson, M. R. et al. | 1996
- 479
-
Residual Stress Control by Ion Beam Assisted DepositionWas, G. S. / Jones, J. W. / Parfitt, L. / Kalnas, C. E. et al. | 1996
- 491
-
Titanium Nitride Formation by Low Energy Ar Ion Bombardment and UV-Light Irradiation During DepositionGerlach, J. W. / Wengenmair, H. / Stritzker, B. / Rauschenbach, B. et al. | 1996
- 497
-
Low-Energy Deposition of High-Strength Al(O) Alloys from an ECR PlasmaBarbour, J. C. / Follstaedt, D. M. / Knapp, J. A. / Marshall, D. A. et al. | 1996
- 503
-
Dual Ion Beam Sputtering of Carbides for EUV ReflectanceSchwarcz, D. / Keski-Kuha, R. A. M. et al. | 1996
- 509
-
Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction FormationQin, S. / Bernstein, J. D. / Chan, C. et al. | 1996
- 515
-
Short-Time Hydrogen Passivation of Poly-Si CMOS Thin Film Transistors by High Dose Rate Plasma Ion ImplantationQin, S. / Bernstein, J. D. / Zhou, Y. / Liu, W. et al. | 1996
- 521
-
An Apparatus for Magnetran Sputter Coating and Plasma Immersion Ion ImplantationEnsinger, W. / Hartmann, J. / Klein, J. / Usedom, P. et al. | 1996
- 527
-
Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin FilmsMurzin, I. H. / Hayashi, N. / Sakamoto, I. et al. | 1996
- 533
-
Effect of Hydrogenation on the Electrical and Optical Properties of GaSbDutta, P. S. / Bhat, H. L. / Kumar, V. et al. | 1996
- 539
-
Deposition of High Quality SiO~2 Films Using TEOS by ECR PlasmaSano, K. / Tamamaki, H. / Nomura, M. / Wickramanayaka, S. et al. | 1996
- 545
-
Carbon Nitride Formation by Plasma Assisted Ion Beam DepositionTompa, G. S. / Murzin, I. H. / Kim, S. I. / Ahn, Y. O. et al. | 1996
- 551
-
Low-Temperature (Karimy, H. / Tobin, E. / Bricault, R. / Cremins-Costa, A. et al. | 1996
- 557
-
Deposition of Boron Nitride Coatings by Reactive rf Magnetron Sputtering: Correlation Between Boron and Nitrogen Contents and the Flux of Energetic Ar^+ Ions at the SubstrateRigato, V. / Spolaore, M. / Della Mea, G. et al. | 1996
- 563
-
Ion Beam Reactive Sputter-Deposition of Silicon and Zirconium OxidesPringle, S. D. / Valizadeh, R. / Colligon, J. S. / Faunce, C. A. et al. | 1996
- 569
-
Ion Beam Assisted Deposition of Si-Diamond-Like Carbon Coatings on Large Area SubstratesFountzoulas, C. G. et al. | 1996
- 575
-
Deposition of Cu Films for Laser Mirror by Partially Ionized Beam DepositionKoh, S.-K. / Yoon, Y.-S. / Kim, K.-H. / Jang, H.-G. et al. | 1996
- 581
-
Controls of Crystallinity and Surface Roughness of Cu Film in Partially Ionized Beam DepositionKoh, S.-K. / Kim, K.-H. / Choi, W.-K. / Jang, H.-G. et al. | 1996
- 587
-
Thin Mo Films Deposited and Analyzed Using Sub-keV Noble Gas IonsVan der Kuur, J. / Melker, E.-J. E. / Huijgen, T. P. / Hoondert, W. H. B. et al. | 1996
- 593
-
Growth and Structure of Thin Films by High-Intensity Pulsed Ion-Beam DepositionIvanov, Y. F. / Matvienko, V. M. / Potyomkin, A. V. / Remnev, G. E. et al. | 1996
- 599
-
Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and OxygenBuyanova, I. A. / Henry, A. / Monemar, B. / Lindstroem, J. L. et al. | 1996
- 605
-
TEM and X-ray Investigation of Single Crystal-Like Zirconia Films Fabricated by Dual Ion Beam DepositionRessler, K. G. / Sonnenberg, N. / Cima, M. J. et al. | 1996
- 611
-
Growth of Tin Oxide Film Deposited by a Hybrid Ion BeamChoi, W. K. / Cho, J. S. / Song, S. K. / Jung, H.-J. et al. | 1996
- 617
-
Crystalline Structure and Composition of Tin Oxide Film Grown by Reactive Ion Assisted Deposition as a Function of Average Irradiating EnergyChoi, W. K. / Song, S. K. / Cho, J. S. / Jung, H.-J. et al. | 1996
- 623
-
Design of a Compact Negative Metal Ion Beam Source for Surface StudiesPark, Y. / Ko, Y. W. / Sohn, M. H. / Kim, S. I. et al. | 1996
- 629
-
A Novel Rectilinear Negative Carbon Ion Beam Source for Large-Area Amorphous Diamond Like Carbon CoatingsSohn, M. H. / Ahn, Y. O. / Ko, Y. W. / Park, Y. et al. | 1996
- 635
-
Ion Sources for Ion Beam Assisted Thin Film DepositionSvadkovski, I. V. / Dostanko, A. P. et al. | 1996
- 641
-
New Instrumentation in Argonne's HVEM-Tandem Facility: Expanded Capability for In Situ Ion Beam StudiesAllen, C. W. / Funk, L. L. / Ryan, E. A. et al. | 1996
- 649
-
Nanoscale/Multilayer Gradient Materials for Application in the Electromagnetic Gun SystemsOtooni, M. A. / Brown, I. G. / Anders, S. / Wang, Z. et al. | 1996
- 661
-
Carbon, Nitrogen, and Oxygen Ion Implantation of Stainless SteelRej, D. J. / Gavrilov, N. V. / Emlin, D. / Henins, I. et al. | 1996
- 667
-
Friction Change Induced by Single MeV Ion Impact Measured by Scanning Probe MicroscopeOgiso, H. / Nakano, S. / Tokumoto, H. / Yamanaka, K. et al. | 1996
- 675
-
Focused Ion Beam MetrologyWagner, A. / Blauner, P. / Longo, P. / Cohen, S. et al. | 1996
- 687
-
The Gas Field Ion Source for Finely Focused Ion Beam SystemsThompson, W. / Armstrong, A. / Etchin, S. / Percival, R. et al. | 1996
- 695
-
High Conductivity FIB Deposited MetalBlauner, P. G. / Wagner, A. et al. | 1996
- 701
-
Formation of Buried Two-Dimensional Electron Gas in GaAs by Si Ion Doping Using MBE-FIB Combined SystemYanagisawa, J. / Nakayama, H. / Wakaya, F. / Yuba, Y. et al. | 1996
- 709
-
On the Influence of Illumination During Ion Damage Defect Anneal of SiliconTanabe, A. / Ashok, S. et al. | 1996
- 715
-
The Detailed Dependence of Implanted Phosphorus Profiles in (100) Single-Crystal Si on Key Implant ParametersGhante, V. / Lam, L. M. / Morris, S. / Yang, S.-H. et al. | 1996
- 721
-
Hyperthinning of Silicon and SiO~2 for Low Power Electronic ApplicationsOakes, D. B. / Gelb, A. / Green, B. D. / Pirri, A. N. et al. | 1996
- 727
-
Synthesis of Thin Membranes in Si Technology by Carbon Ion ImplantationSerre, C. / Perez-Rodriguez, A. / Calvo-Barrio, L. / Romano-Rodriguez, A. et al. | 1996
- 733
-
Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in SiliconMyers, S. M. / Petersen, G. A. et al. | 1996
- 739
-
Anomalous Leakage Current Reduction by Ramping Rate Control in MeV ImplantationHamada, K. / Nishio, N. / Saito, S. et al. | 1996
- 745
-
Properties of Silicon-on-Defect-Layer MaterialLi, J. / Jones, K. W. / Coleman, J. H. / Yi, J. et al. | 1996
- 751
-
Investigation of Lateral and Vertical Profiles Enhanced by ImplantationMineji, A. / Hamada, K. / Saito, S. et al. | 1996
- 757
-
Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge PreimplantationKase, M. / Mori, H. et al. | 1996
- 763
-
AFM Study of Surface Morphology of High Dose Co Implanted Si with a MEVVA Ion SourcePeng, Q. / Wong, S. P. / Xu, J. B. / Wilson, I. H. et al. | 1996
- 769
-
Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, BF~2, and As Ion ImplantationParab, K. B. / Yang, S.-H. / Morris, S. J. / Tian, S. et al. | 1996
- 775
-
Low Temperature Phase Transition (PT) and Defect Formation (DF) in Silicon with Dioxide Inclusions Under X-ray IrradiationMakhkamov, S. M. / Abdurakhmanova, S. N. et al. | 1996
- 781
-
MeV Ion Induced Damages and their Annealing Behavior in SiliconCho, N.-H. / Jang, K.-W. / Lee, J.-Y. / Ro, J.-S. et al. | 1996
- 789
-
Carbon Implantation in Al~x Ga~1~-~x AsPearton, S. J. / Abernathy, C. R. et al. | 1996
- 795
-
Optical and Electrical Properties of Heavily Carbon-Doped GaAs Fabricated by High-Energy Ion-ImplantationShima, T. / Makita, Y. / Kimura, S. / Harada, K. et al. | 1996
- 801
-
Cavity Nucleation and Evolution in He-Implanted Si and GaAsFollstaedt, D. M. / Myers, S. M. / Petersen, G. A. / Barbour, J. C. et al. | 1996
- 807
-
The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of n-GaAsSeng, W. F. / Barnes, P. A. / Lovejoy, M. L. / Fu, L. P. et al. | 1996
- 815
-
Ion Beam Assisted Quantum Well IntermixingGoldberg, R. D. / Mitchell, I. V. / Charbonneau, S. / Poole, P. et al. | 1996
- 823
-
Irradiation-Induced Damage and Intermixing of GaAs-AlGaAs Quantum WellsTan, H. H. / Williams, J. S. / Jagadish, C. / Burke, P. T. et al. | 1996
- 829
-
Dose and Doping Dependence of Damage Annealing in Fe MeV Implanted InPCarnera, A. / Fraboni, B. / Gasparotto, A. / Priolo, F. et al. | 1996
- 835
-
High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs: Formation of New Shallow Emission BandsHarada, K. / Makita, Y. / Shibata, H. / Lo, B. et al. | 1996
- 841
-
Annealing Effect of Cd^+ Ion-Implanted Liquid Encapsulated Czochralski-GaAsKawasumi, Y. / Makita, Y. / Kimura, S. / Iida, T. et al. | 1996
- 847
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Suppression of Secondary Defects in Silicon by Carbon ImplantationSimpson, T. W. / Mitchell, I. V. et al. | 1996
- 853
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The Fabrication of Complex Membrane Structures in n-GaAs for Micromechanical ApplicationsMiao, J. / Weiss, B. L. / Hartnagel, H. L. / Wilson, R. J. et al. | 1996
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Energetic Ion Beams in Semiconductor Processing: Summary of a DOE Panel StudyPicraux, S. T. / Chason, E. / Poate, J. M. / Borland, J. O. et al. | 1996
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Ion Mixing in Film-Substrate Systems Under Polyenergetic Ar^+ Ion Beam IrradiationKalin, B. A. / Volkov, N. V. / Gladkov, B. P. / Sabo, S. E. et al. | 1996
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MeV Ion Beam Synthesis of Well-Defined Buried 3C-SiC Layers in SiliconLindner, J. K. N. / Goetz, B. / Frohnwieser, A. / Stritzker, B. et al. | 1996
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Structural and Magnetic Properties of Ion Beam Deposited Ag~(~1~-~x~)Fe~x FilmsKhan, H. R. / Loebich, O. et al. | 1996