Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p^+GaAs base layers (English)
- New search for: Moriarty, G. R.
- New search for: Murtagh, M.
- New search for: Cherkaoui, K.
- New search for: Gouez, G.
- New search for: Kelly, P. V.
- New search for: Crean, G. M.
- New search for: Bland, S. W.
- New search for: Moriarty, G. R.
- New search for: Murtagh, M.
- New search for: Cherkaoui, K.
- New search for: Gouez, G.
- New search for: Kelly, P. V.
- New search for: Crean, G. M.
- New search for: Bland, S. W.
- New search for: Panayotatos, P.
- New search for: Zekentes, K.
In:
Expert evaluation and control of compound semiconductor materials and technologies
1-3
;
284-288
;
2001
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ISSN:
- Conference paper / Print
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Title:Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p^+GaAs base layers
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Contributors:Moriarty, G. R. ( author ) / Murtagh, M. ( author ) / Cherkaoui, K. ( author ) / Gouez, G. ( author ) / Kelly, P. V. ( author ) / Crean, G. M. ( author ) / Bland, S. W. ( author ) / Panayotatos, P. / Zekentes, K.
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Conference:International workshop; 5th, Expert evaluation and control of compound semiconductor materials and technologies ; 2000 ; Heraklion, Greece
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Published in:MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80, 1-3 ; 284-288
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Publisher:
- New search for: Elsevier
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Publication date:2001-01-01
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Size:5 pages
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Remarks:Also known as EXMATEC 2000
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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