Getting to Zero-Methods of Reducing Defects (English)
- New search for: Roesch, W.
- New search for: Roesch, W.
In:
Gallium arsenide reliability workshop; GaAs reliability workshop
;
37-46
;
2001
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ISBN:
- Conference paper / Print
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Title:Getting to Zero-Methods of Reducing Defects
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Contributors:Roesch, W. ( author )
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Conference:Gallium arsenide reliability workshop; GaAs reliability workshop ; 2001 ; Baltimore, MD
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Published in:GAAS RELIABILITY WORKSHOP ; 37-46
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Publisher:
- New search for: JEDEC Solid State Technology Association
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Publication date:2001-01-01
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Size:10 pages
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Remarks:IEEE cat no 01TH8602
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Comparative thermal characterizations of GaAs and SiC devicesMittereder, J.A. / Anderson, W.T. / Buot, F.A. / Ioannou, D.E. et al. | 2001
- 13
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Comparison of silicon carbide and GaAs Schottky diodeLuo, J. / Chung, K. / Huang, H. / Bernstein, J.B. et al. | 2001
- 15
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Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modelingBorgarino, M. / Kuchenbecker, J. / Tartarin, J.G. / Bary, L. / Kovacic, T. / Plana, R. / Menozzi, R. / Fantini, F. / Graffeuil, J. et al. | 2001
- 23
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Reliability issues in GaAs-based devices for space applicationsLeon, R. / Okuno, J. / Ruiz, R. / Gallegos, M. / Vu, D.T. et al. | 2001
- 33
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Effects of crystal imperfections in multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristicsIkossi, K. / Katzer, D.S. / Binari, S.C. / Rabinovich, W.S. et al. | 2001
- 37
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Getting to zero - methods of reducing defectsRoesch, W.J. et al. | 2001
- 49
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Design for ReliabilityErsland, P. / Bunis, C. et al. | 2001
- 61
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Physics of FailureBunis, C. et al. | 2001
- 61
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Physics of failure - the basic materials science behind failuresBunis, C.B. et al. | 2001
- 87
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Effect of gate metal on reliability of metamorphic HEMTsDammann, M. / Leuther, A. / Konstanzer, H. / Jantz, W. et al. | 2001
- 89
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Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device designMenozzi, R. / Sozzi, G. / Verzellesi, G. / Borgarino, M. / Lanzieri, C. / Canali, C. et al. | 2001
- 97
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Channel-substrate current and breakdown characteristics in GaAs MESFETs with varied MBE buffer thicknessGao, F. / Chanana, R. / Nicholls, T. et al. | 2001
- 97
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Channel-Substrate Current and Breakdown Characteristics of GaAs MESFETs with Varied MBE Buffer ThicknessGao, F. / Chanana, R. / Nicholls, T. et al. | 2001
- 119
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Reliability of metamorphic HEMTs on GaAs substratesMarsh, P.F. / Whelan, C.S. / Hoke, W.E. / Leoni, R.E. / Kazior, T.E. et al. | 2001
- 133
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SESSION IV - HBT RELIABILITYRoesch, B. et al. | 2001
- 135
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Exploring physical mechanisms for sudden beta degradation in GaAs-based HBTsWelser, R.E. / DeLuca, P.M. et al. | 2001
- 159
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Determination of reliability on MOCVD grown InGaP/GaAs HBT's under both thermal and current acceleration stressesFeng, K.T. / Rushing, L. / Canfield, P. / Flores, L. et al. | 2001
- 181
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Modeling HBT ledge variations for insight into GaAs HBT reliabilityHenderson, T. et al. | 2001
- 203
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Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentrationFresina, M. / Logue, M. / Fendrich, J. / Rogers, T. et al. | 2001
- i
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2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602)| 2001