Optical and microstructural properties of doubly Ge-Si implanted SiO2 layers (English)
- New search for: Prucnal, S.
- New search for: Cheng, X. Q.
- New search for: Sun, J. M.
- New search for: Kogler, R.
- New search for: Zuk, J.
- New search for: Skorupa, W.
- New search for: Prucnal, S.
- New search for: Cheng, X. Q.
- New search for: Sun, J. M.
- New search for: Kogler, R.
- New search for: Zuk, J.
- New search for: Skorupa, W.
In:
Ion implantation and other applications of ions and electrons; ION 2004
;
693-697
;
2005
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ISSN:
- Conference paper / Print
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Title:Optical and microstructural properties of doubly Ge-Si implanted SiO2 layers
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Contributors:Prucnal, S. ( author ) / Cheng, X. Q. ( author ) / Sun, J. M. ( author ) / Kogler, R. ( author ) / Zuk, J. ( author ) / Skorupa, W. ( author )
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Conference:International conference; 5th, Ion implantation and other applications of ions and electrons; ION 2004 ; 2004 ; Kazimierz Dolny, Poland
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Published in:VACUUM -LONDON THEN OXFORD - PERGAMON- ; 78 ; 693-697
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Publisher:
- New search for: Elsevier
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Publication date:2005-01-01
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Size:5 pages
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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