Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI (English)
- New search for: Hamilton, J. J.
- New search for: Collart, E. J.
- New search for: Colombeau, B.
- New search for: Jeynes, C.
- New search for: Bersani, M.
- New search for: Giubertoni, D.
- New search for: Sharp, J. A.
- New search for: Cowern, N. E.
- New search for: Kirkby, K. J.
- New search for: Hamilton, J. J.
- New search for: Collart, E. J.
- New search for: Colombeau, B.
- New search for: Jeynes, C.
- New search for: Bersani, M.
- New search for: Giubertoni, D.
- New search for: Sharp, J. A.
- New search for: Cowern, N. E.
- New search for: Kirkby, K. J.
- New search for: Chen, Lih J.
- New search for: Poate, John
- New search for: Lei, Tan-Fu
In:
Ion implantation technology
1/2
;
107-112
;
2005
-
ISSN:
- Conference paper / Print
-
Title:Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI
-
Contributors:Hamilton, J. J. ( author ) / Collart, E. J. ( author ) / Colombeau, B. ( author ) / Jeynes, C. ( author ) / Bersani, M. ( author ) / Giubertoni, D. ( author ) / Sharp, J. A. ( author ) / Cowern, N. E. ( author ) / Kirkby, K. J. ( author ) / Chen, Lih J.
-
Conference:International conference; 15th, Ion implantation technology ; 2004 ; Taipei, Taiwan
-
Published in:Ion implantation technology , 1/2 ; 107-112NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B ; 237, 1/2 ; 107-112
-
Publisher:
- New search for: Elsevier
-
Publication date:2005-01-01
-
Size:6 pages
-
ISSN:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.