Encapsulation of the heteroepitaxial growth of wide band gap g-CuCl on silicon substrates (English)
- New search for: Lucas, F. O.
- New search for: O'Reilly, L.
- New search for: Natarajan, G.
- New search for: McNally, P. J.
- New search for: Daniels, S.
- New search for: Taylor, D. M.
- New search for: William, S.
- New search for: Cameron, D. C.
- New search for: Bradley, A. L.
- New search for: Miltra, A.
- New search for: Lucas, F. O.
- New search for: O'Reilly, L.
- New search for: Natarajan, G.
- New search for: McNally, P. J.
- New search for: Daniels, S.
- New search for: Taylor, D. M.
- New search for: William, S.
- New search for: Cameron, D. C.
- New search for: Bradley, A. L.
- New search for: Miltra, A.
- New search for: Lau, Shu Ping
In:
Materials for advanced technologies; ICMAT 2005
1
;
112-117
;
2006
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ISSN:
- Conference paper / Print
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Title:Encapsulation of the heteroepitaxial growth of wide band gap g-CuCl on silicon substrates
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Contributors:Lucas, F. O. ( author ) / O'Reilly, L. ( author ) / Natarajan, G. ( author ) / McNally, P. J. ( author ) / Daniels, S. ( author ) / Taylor, D. M. ( author ) / William, S. ( author ) / Cameron, D. C. ( author ) / Bradley, A. L. ( author ) / Miltra, A. ( author )
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Conference:International conference, Materials for advanced technologies; ICMAT 2005 ; 2005 ; Singapore
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Published in:Materials for advanced technologies; ICMAT 2005 , 1 ; 112-117JOURNAL OF CRYSTAL GROWTH ; 287, 1 ; 112-117
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Publisher:
- New search for: Elsevier
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Publication date:2006-01-01
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Size:6 pages
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Remarks:Theme title: ZnO and related materials.
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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