Gallium oxide (Ga2 O3) on gallium arsenide-A low defect, high-K system for future devices (English)
- New search for: Paterson, G. W.
- New search for: Wilson, J. A.
- New search for: Moran, D.
- New search for: Hill, R.
- New search for: Long, A. R.
- New search for: Thayne, I.
- New search for: Passlack, M.
- New search for: Droopad, R.
- New search for: European Materials Research Society
- New search for: International Union of Materials Research Societies
- New search for: ICEM
- New search for: Paterson, G. W.
- New search for: Wilson, J. A.
- New search for: Moran, D.
- New search for: Hill, R.
- New search for: Long, A. R.
- New search for: Thayne, I.
- New search for: Passlack, M.
- New search for: Droopad, R.
- New search for: Frank, Martin M.
- New search for: European Materials Research Society
- New search for: International Union of Materials Research Societies
- New search for: ICEM
In:
From strained silicon to nanotubes: novel channels for field effect devices
3
;
277-281
;
2006
-
ISSN:
- Conference paper / Print
-
Title:Gallium oxide (Ga2 O3) on gallium arsenide-A low defect, high-K system for future devices
-
Contributors:Paterson, G. W. ( author ) / Wilson, J. A. ( author ) / Moran, D. ( author ) / Hill, R. ( author ) / Long, A. R. ( author ) / Thayne, I. ( author ) / Passlack, M. ( author ) / Droopad, R. ( author ) / Frank, Martin M. / European Materials Research Society
-
Conference:Symposium; 2006 May, From strained silicon to nanotubes: novel channels for field effect devices
-
Published in:MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135, 3 ; 277-281
-
Publisher:
-
Publication date:2006-01-01
-
Size:5 pages
-
Remarks:Held as Symposium B of the E-MRS IUMRS ICEM Spring meeting.
-
ISSN:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.