Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing (English)
- New search for: Ulyashin, A. G.
- New search for: Christensen, J. S.
- New search for: Svensson, B. G.
- New search for: Kogler, R.
- New search for: Skorupa, W.
- New search for: Ulyashin, A. G.
- New search for: Christensen, J. S.
- New search for: Svensson, B. G.
- New search for: Kogler, R.
- New search for: Skorupa, W.
In:
Si-based materials for advanced microelectronic devices : synthesis, defects and diffusion
1/2
;
126-129
;
2006
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ISSN:
- Conference paper / Print
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Title:Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing
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Contributors:Ulyashin, A. G. ( author ) / Christensen, J. S. ( author ) / Svensson, B. G. ( author ) / Kogler, R. ( author ) / Skorupa, W. ( author )
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Conference:Symposium U, Si-based materials for advanced microelectronic devices : synthesis, defects and diffusion ; 2006 ; Nice, France
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Published in:Si-based materials for advanced microelectronic devices : synthesis, defects and diffusion , 1/2 ; 126-129NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B ; 253, 1/2 ; 126-129
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Publisher:
- New search for: 1984-
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Place of publication:Amsterdam , North-Holland Physics
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Publication date:2006-01-01
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Size:4 pages
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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