Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin Film Transistors (English)
- New search for: Park, B.
- New search for: Lim, C.-H.
- New search for: Jeon, H.-S.
- New search for: Woo, C.-S.
- New search for: Hwang, Y.-S.
- New search for: Choi, S.-J.
- New search for: Cho, C.-W.
- New search for: Lee, C.-J.
- New search for: Lee, S.-B.
- New search for: Park, B.
- New search for: Lim, C.-H.
- New search for: Jeon, H.-S.
- New search for: Woo, C.-S.
- New search for: Hwang, Y.-S.
- New search for: Choi, S.-J.
- New search for: Cho, C.-W.
- New search for: Lee, C.-J.
- New search for: Lee, S.-B.
- New search for: Kim, B. W.
In:
Korean conference on semiconductors
;
S828-S832
;
2006
- Conference paper / Print
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Title:Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin Film Transistors
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Contributors:Park, B. ( author ) / Lim, C.-H. ( author ) / Jeon, H.-S. ( author ) / Woo, C.-S. ( author ) / Hwang, Y.-S. ( author ) / Choi, S.-J. ( author ) / Cho, C.-W. ( author ) / Lee, C.-J. ( author ) / Lee, S.-B. ( author ) / Kim, B. W.
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Conference:13th, Korean conference on semiconductors ; 2006 ; Jeju, South Korea
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Published in:Korean conference on semiconductors ; S828-S832JOURNAL- KOREAN PHYSICAL SOCIETY ; 49 ; S828-S832
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Publisher:
- New search for: Korean Physical Society,
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Publication date:2006-01-01
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Size:S828-S832
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Remarks:Also known as KCS 2006.; For selected papers see same s/m vol 50 no 3 2007
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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