III-V Metal-Oxide-Semiconductor Field-Effect Transistors with High kappa Dielectrics (Review Paper) [published May 17, 2007] (English)
- New search for: Hong, M.
- New search for: Kwo, J. R.
- New search for: Tsai, P.-c.
- New search for: Chang, Y.
- New search for: Huang, M.-L.
- New search for: Chen, C.-p.
- New search for: Lin, T.-d.
- New search for: Hong, M.
- New search for: Kwo, J. R.
- New search for: Tsai, P.-c.
- New search for: Chang, Y.
- New search for: Huang, M.-L.
- New search for: Chen, C.-p.
- New search for: Lin, T.-d.
In:
Dielectric thin films for future ULSI devices: [IWDTF-6]
5b
;
3167-3180
;
2007
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ISSN:
- Conference paper / Print
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Title:III-V Metal-Oxide-Semiconductor Field-Effect Transistors with High kappa Dielectrics (Review Paper) [published May 17, 2007]
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Contributors:Hong, M. ( author ) / Kwo, J. R. ( author ) / Tsai, P.-c. ( author ) / Chang, Y. ( author ) / Huang, M.-L. ( author ) / Chen, C.-p. ( author ) / Lin, T.-d. ( author )
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Conference:International workshop, Dielectric thin films for future ULSI devices: [IWDTF-6] ; 2006 ; Kanagawa, Japan
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Published in:Dielectric thin films for future ULSI devices: [IWDTF-6] , 5b ; 3167-3180
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Publisher:
- New search for: Japan Society of Applied Physics
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Publication date:2007-01-01
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Size:14 pages
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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