Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors (English)
- New search for: Waggoner, T.
- New search for: Triska, J.
- New search for: Hoshino, K.
- New search for: Wager, J.F.
- New search for: Conley, J.F.
- New search for: Waggoner, T.
- New search for: Triska, J.
- New search for: Hoshino, K.
- New search for: Wager, J.F.
- New search for: Conley, J.F.
In:
Conference on the physics and chemistry of surfaces and interfaces; Papers from the 38th conference on the physics and chemistry of semiconductor interfaces (PCSI 38)
4
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04D115
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2011
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ISSN:
- Conference paper / Print
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Title:Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors
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Contributors:Waggoner, T. ( author ) / Triska, J. ( author ) / Hoshino, K. ( author ) / Wager, J.F. ( author ) / Conley, J.F. ( author )
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Conference:38th, Conference on the physics and chemistry of surfaces and interfaces; Papers from the 38th conference on the physics and chemistry of semiconductor interfaces (PCSI 38) ; 2011 ; San Diego, CA
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Published in:
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Publisher:
- New search for: AVS
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Publication date:2011-01-01
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Size:04D115
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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