Interface properties of Al~2O~3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition (English)
- New search for: Yoshida, T.
- New search for: Kato, K.
- New search for: Shibayama, S.
- New search for: Sakashita, M.
- New search for: Taoka, N.
- New search for: Takeuchi, W.
- New search for: Nakatsuka, O.
- New search for: Zaima, S.
- New search for: Japan Society of Applied Physics
- New search for: Yoshida, T.
- New search for: Kato, K.
- New search for: Shibayama, S.
- New search for: Sakashita, M.
- New search for: Taoka, N.
- New search for: Takeuchi, W.
- New search for: Nakatsuka, O.
- New search for: Zaima, S.
- New search for: Takagi, Shinichi
- New search for: Kageshima, Hiroyuki
- New search for: Japan Society of Applied Physics
In:
Dielectric thin films for future electron devices: science and technology
8
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08LD03
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2014
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ISSN:
- Conference paper / Print
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Title:Interface properties of Al~2O~3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition
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Contributors:Yoshida, T. ( author ) / Kato, K. ( author ) / Shibayama, S. ( author ) / Sakashita, M. ( author ) / Taoka, N. ( author ) / Takeuchi, W. ( author ) / Nakatsuka, O. ( author ) / Zaima, S. ( author ) / Takagi, Shinichi / Kageshima, Hiroyuki
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Conference:International workshop, Dielectric thin films for future electron devices: science and technology ; 2013 ; Tokyo
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Published in:JAPANESE JOURNAL OF APPLIED PHYSICS -NEW SERIES- ; 53, 8 ; 08LD03
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Publisher:
- New search for: Japan Society of Applied Physics
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Place of publication:Tokyo
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Publication date:2014-01-01
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Size:08LD03
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Remarks:Also known as IWDTF2013.
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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