Porous silicon (Unknown)
- New search for: Hamilton, B.
- New search for: Hamilton, B.
In:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
;
10
, 9
;
1187
;
1995
-
ISSN:
- Article (Journal) / Print
-
Title:Porous silicon
-
Contributors:Hamilton, B. ( author )
-
Published in:SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 10, 9 ; 1187
-
Publisher:
- New search for: IOP PUBLISHING LTD
-
Publication date:1995-01-01
-
Size:1187 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:Unknown
- New search for: 621.38152
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 621.38152 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 10, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1187
-
Porous siliconB Hamilton et al. | 1995
- 1208
-
Hot-carrier degradation in submicrometre MOSFETs: from uniform injection towards the real operating conditionsG Groeseneken / R Bellens / G Van den Bosch / H E Maes et al. | 1995
- 1208
-
Hot-carrier degradation in submicron MOSFETs: From uniform injection towards the real operating conditionsGroeseneken, G. et al. | 1995
- 1221
-
A k.p model for carrier capture by a quantum wellG C Crow / R A Abram et al. | 1995
- 1229
-
Study of the carrier density dependence of the frictional drag between closely spaced two-dimensional electron gasesH Rubel / E H Linfield / D A Ritchie / K M Brown / M Pepper / G A C Jones et al. | 1995
- 1233
-
Electron spin resonance in In0.53Ga0.47AsJ Beerens / C J Miner / N Puetz et al. | 1995
- 1237
-
Characteristics of AlGaAs/GaAs heterostructures grown by migration-enhanced epitaxy at high temperaturesM Kawashima / T Saku / Y Horikoshi et al. | 1995
- 1247
-
Characterization n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxyMatsumura, A. / Fernandez, J. M. / Thornton, T. J. / Prasad, R. S. et al. | 1995
- 1247
-
Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxyM Matsumura / J M Fernandez / T J Thornton / R S Prasad / S N Holmes / X M Zhang / M H Xie / J Zhang / B A Joyce et al. | 1995
- 1253
-
Ultrafast carrier relaxation in Zn1-xCdxSe/ZnSySe1-y multiple quantum wells studied by femtosecond pump-probe spectroscopyT Tokizaki / H Sakai / A Nakamura / Y Manabe / S Hayashi / T Mitsuyu et al. | 1995
- 1257
-
Diffusion of platinum into dislocated and non-dislocated siliconW Lerch / N A Stolwijk / H Mehrer / C Poisson et al. | 1995
- 1264
-
Molecular beam epitaxy of iron-doped HgSe layersT Widmer / D Schikora / C Prott / B Schottker / K Lischka / G Machel / S Luther / M von Ortenberg et al. | 1995
- 1269
-
Effect of a magnetic field on polarized luminescence of superlatticesV P Kochereshko / G R Pozina / G L Sandler / I N Uraltsev et al. | 1995
- 1272
-
Theoretical study of an infrared-to-visible wavelength quantum-well converterV Ryzhii / I Khmyrova / M Ershov / M Ryzhii / T Iizuka et al. | 1995
- 1277
-
Photosensitive ZnO thin films prepared by the chemical deposition method SILARA E Jimenez-Gonzailez / P K Nair et al. | 1995
- 1283
-
A comparison of 1.55 micron distributed Bragg reflector stacks for use in multi quantum well micro resonator modulatorsGuy, P. / Woodbridge, K. / Haywood, S.K. / Hopkinson, M. et al. | 1995
- 1283
-
A comparison of 1.55 m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulatorsGuy, P. / Woodbridge, K. / Haywood, S. K. / Hopkinson, M. et al. | 1995
- 1283
-
A comparison of 1.55 mu m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulatorsP Guy / K Woodbridge / S K Haywood / M Hopkinson et al. | 1995
- 1283
-
A comparison of 1.55 mm distributed Bragg reflector stacks for use in multi quantum well micro resonator modulatorsGuy, P. et al. | 1995
- 1287
-
BOOK REVIEWS| 1995