Tunnel Magnetoresistance Devices Processed by Oxidation in Air and UV Assisted Oxidation in Oxygen (English)
- New search for: Girgis, E.
- New search for: Schelten, J.
- New search for: Gruenberg, P.
- New search for: Rottlaender, P.
- New search for: Kohlstedt, H.
- New search for: Girgis, E.
- New search for: Schelten, J.
- New search for: Gruenberg, P.
- New search for: Rottlaender, P.
- New search for: Kohlstedt, H.
In:
IEEE TRANSACTIONS ON ELECTRON DEVICES
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47
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697-701
;
2000
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ISSN:
- Article (Journal) / Print
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Title:Tunnel Magnetoresistance Devices Processed by Oxidation in Air and UV Assisted Oxidation in Oxygen
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Contributors:Girgis, E. ( author ) / Schelten, J. ( author ) / Gruenberg, P. ( author ) / Rottlaender, P. ( author ) / Kohlstedt, H. ( author )
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Published in:IEEE TRANSACTIONS ON ELECTRON DEVICES ; 47 ; 697-701
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2000-01-01
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Size:5 pages
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ISSN:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3 / 621
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© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 47
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Changes in the Editorial BoardJindal, R. P. et al. | 2000
- 1
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EDITORIAL - Changes in the Editorial BoardJindal, R.P. et al. | 2000
- 1
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2000 index IEEE Transactions on electron devices vol. 47| 2000
- 2
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Analysis of Hot Carrier Transport in AIGaAs/InGaAs Pseudomorphic HEMT's by Means of ElectroluminescenceMeneghesso, G. / Grave, T. / Manfredi, M. / Pavesi, M. / Canali, C. / Zanoni, E. et al. | 2000
- 2
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PAPERS - Compound Semiconductor Devices - Analysis of Hot Carrier Transport in AlGaAs-InGaAs Pseudomorphic HEMT's by Means of ElectroluminescenceMeneghesso, G. et al. | 2000
- 2
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Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescenceMeneghesso, G. / Grave, T. / Manfredi, M. / Pavesi, M. / Canali, C. / Zanoni, E. et al. | 2000
- 11
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PAPERS - Compound Semiconductor Devices - A Simple Yet Comprehensive Unified Physical Model of the 2-D Electron Gas in Delta-Doped and Uniformly Doped High Electron Mobility TransistorsKarmalkar, S. et al. | 2000
- 11
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A Simple Yet Comprehensive Unified Physical Model of the 2-D Electron Gas in Delta-Doped and Uniformly Doped High Electron Mobility TransistorsKarmalkar, S. / Ramesh, G. et al. | 2000
- 16
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Subject index| 2000
- 24
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Barrier Height Engineering on GaAs THz Schottky Diodes by Means of High-Low Doping, InGaAs- and InGap-LayersSassen, S. / Witzigmann, B. / Wolk, C. / Brugger, H. et al. | 2000
- 24
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PAPERS - Compound Semiconductor Devices - Barrier Height Engineering on GaAs THz Schottky Diodes by Means of High-Low Doping, InGaAs- and InGaP-LayersSassen, S. et al. | 2000
- 33
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Depletion- and Enhancement-Mode Modulation-Doped Field-Effect Transistors for Ultrahigh-Speed Applications: An Electrochemical Fabrication TechnologyXu, D. / Suemitsu, T. / Osaka, J. / Umeda, Y. / Yamane, Y. / Ishii, Y. / Ishii, T. / Tamamura, T. et al. | 2000
- 33
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PAPERS - Compound Semiconductor Devices - Depletion- and Enhancement-Mode Modulation-Doped Field-Effect Transistors for Ultrahigh-Speed Applications: An Electrochemical Fabrication TechnologyXu, D. et al. | 2000
- 44
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Compact and Comprehensive Database for Ion-Implanted As ProfileSuzuki, K. / Sudo, R. / Feudel, T. / Fichtner, W. et al. | 2000
- 44
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PAPERS - Materials Processing and Packaging - Compact and Comprehensive Database for Ion-Implanted As ProfileSuzuki, K. et al. | 2000
- 50
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PAPERS - Optoelectronics, Displays, Imaging - Study and Fabrication of PIN Photodiode by Using ZnSe-PS-Si StructureChang, C.C. et al. | 2000
- 50
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Study and Fabrication of PIN Photodiode by Using ZnSe/PS/Si StructureChang, C. C. / Lee, C. H. et al. | 2000
- 55
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Performance Analysis of a Color CMOS Photogate Image SensorBlanksby, A. J. / Loinaz, M. J. et al. | 2000
- 55
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PAPERS - Optoelectronics, Displays, Imaging - Performance Analysis of a Color CMOS Photogate Image SensorBlanksby, A.J. et al. | 2000
- 65
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A 1-mm 50 k-Pixel IT CCD Image Sensor for Miniature Camera SystemItakura, K. / Nobusada, T. / Kokusenya, N. / Nagayoshi, R. / Ozaki, M. et al. | 2000
- 65
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PAPERS - Optoelectronics, Displays, Imaging - A 1-mm 50 k-Pixel IT CCD Image Sensor for Miniature Camera SystemItakura, K. et al. | 2000
- 71
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Conduction Mechanisms in Barium Tantalates Films and Modification of Interfacial Barrier HeightLee, Y. H. / Kim, Y. S. / Ju, B. K. / Oli, M. H. et al. | 2000
- 71
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PAPERS - Optoelectronics, Displays, Imaging - Conduction Mechanisms in Barium Tantalates Films and Modification of Interfacial Barrier HeightLee, Y.-H. et al. | 2000
- 77
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PAPERS - Optoelectronics, Displays, Imaging - Development of Panel Structure for a High-Resolution 21-in-Diagonal Full-Color Surface-Discharge Plasma Display PanelShinoda, T. et al. | 2000
- 77
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Development of Panel Structure for a High-Resolution 21-in-Diagonal Full-Color Surface-Discharge Plasma Display PanelShinoda, T. / Wakitani, M. / Nanto, T. / Awaji, N. et al. | 2000
- 82
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PAPERS - Silicon Devices - Soft Breakdown Conduction in Ultrathin (3-5 nm) Gate DielectricsMiranda, E. et al. | 2000
- 82
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Soft Breakdown Conduction in Ultrathin (3-5 nm) Gate DielectricsMiranda, E. / Sune, J. / Rodriguez, R. / Nafria, M. / Aymerich, X. / Fonseca, L. / Campabadal, F. et al. | 2000
- 90
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Interconnect Scaling Scenario Using a Chip Level Interconnect ModelYamashita, K. / Odanaka, S. et al. | 2000
- 90
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PAPERS - Silicon Devices - Interconnect Scaling Scenario Using a Chip Level Interconnect ModelYamashita, K. et al. | 2000
- 97
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PAPERS - Silicon Devices - Steady State Drain Current Technique for Generation and Recombination Lifetime Measurement in the SOI MOSFETCheng, Z.-Y. et al. | 2000
- 97
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Steady State Drain Current Technique for Generation and Recombination Lifetime Measurement in the SOI MOSFETCheng, Z. Y. / Ling, C. H. et al. | 2000
- 103
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A Unified Simulation of Schottky and Ohmic ContactsMatsuzawa, K. / Uchida, K. / Nishiyama, A. et al. | 2000
- 103
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PAPERS - Silicon Devices - A Unified Simulation of Schottky and Ohmic ContactsMatsuzawa, K. et al. | 2000
- 109
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Dynamic-Stress-Induced Enhanced Degradation of 1/f Noise in n-MOSFET'sXu, J. P. / Lai, P. T. / Cheng, Y. C. et al. | 2000
- 109
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PAPERS - Silicon Devices - Dynamic-Stress-Induced Enhanced Degradation of 1-f Noise in n-MOSFET'sXu, J.P. et al. | 2000
- 113
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Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate-Material EngineeringZhou, X. et al. | 2000
- 113
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PAPERS - Silicon Devices - Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate-Material EngineeringZhou, X. et al. | 2000
- 121
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PAPERS - Silicon Devices - Electrical Conduction and Dielectric Breakdown in Aluminum Oxide Insulators on SiliconKolodzey, J. et al. | 2000
- 121
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Electrical Conduction and Dielectric Breakdown in Aluminum Oxide Insulators on SiliconKolodzey, J. / Chowdhury, E. A. / Adam, T. N. / Rau, I. / Olowolafe, J. O. / Suehle, J. S. / Chen, Y. et al. | 2000
- 129
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A New On-Chip Interconnect Crosstalk Model and Experimental Verification for CMOS VLSI Circuit DesignEo, Y. / Eisenstadt, W. R. / Jeong, J. Y. / Kwon, O. K. et al. | 2000
- 129
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PAPERS - Silicon Devices - A New On-Chip Interconnect Crosstalk Model and Experimental Verification for CMOS VLSI Circuit DesignEo, Y. et al. | 2000
- 141
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Effects of the Inversion-Layer Centroid on the Performance of Double-Gate MOSFET'sLopez Villanueva, J. A. / Cartujo-Cassinello, P. / Gamiz, F. / Banqueri, J. / Palma, A. J. et al. | 2000
- 141
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PAPERS - Silicon Devices - Effects of the Inversion-Layer Centroid on the Performance of Double-Gate MOSFET'sLopez-Villanueva, J.A. et al. | 2000
- 147
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Fabrication Method for IC-Oriented Si Single-Electron TransistorsOno, Y. / Takahashi, Y. / Yamazaki, K. / Nagase, M. / Namatsu, H. / Kurihara, K. / Murase, K. et al. | 2000
- 147
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PAPERS - Silicon Devices - Fabrication Method for IC-Oriented Si Single-Electron TransistorsOno, Y. et al. | 2000
- 154
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A New Model for the Description of Gate Voltage and Temperature Dependence of Gate Induced Drain Leakage (GIDL) in the Low Electric Field RegionRosar, M. / Leroy, B. / Schweeger, G. et al. | 2000
- 154
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PAPERS - Silicon Devices - A New Model for the Description of Gate Voltage and Temperature Dependence of Gate Induced Drain Leakage (GIDL) in the Low Electric Field RegionRosar, M. et al. | 2000
- 160
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PAPERS - Silicon Devices - MOSFET Channel Length: Extraction and InterpretationTaur, Y. et al. | 2000
- 160
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MOSFET Channel Length: Extraction and InterpretationTaur, Y. et al. | 2000
- 171
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A Comprehensive Study of Hot-Carrier Induced Interface and Oxide Trap Distributions in MOSFET's Using a Novel Charge Pumping TechniqueMahapatra, S. / Parikh, C. D. / Rao, V. R. / Viswanathan, C. R. / Vasi, J. et al. | 2000
- 171
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PAPERS - Silicon Devices - A Comprehensive Study of Hot-Carrier Induced Interface and Oxide Trap Distributions in MOSFET's Using a Novel Charge Pumping TechniqueMahapatra, S. et al. | 2000
- 178
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PAPERS - Silicon Devices - Optimization Study of VLSI Interconnect ParametersAnand, M.B. et al. | 2000
- 178
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Optimization Study of VLSI Interconnect ParametersAnand, M. B. / Shibata, H. / Kakumu, M. et al. | 2000
- 187
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Low Frequency Conductance Voltage Analysis of SiGe~xSi~1~-~x/Si Heterojunction Bipolar TransistorsNeugroschel, A. / Li, G. / Sah, C. T. et al. | 2000
- 187
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PAPERS - Silicon Devices - Low Frequency Conductance Voltage Analysis of SiGexSi1-x-Si Heterojunction Bipolar TransistorsNeugroschel, A. et al. | 2000
- 197
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A Novel Low Noise IMPATT DiodeHerbert, D. C. / Davis, R. G. et al. | 2000
- 197
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PAPERS - Silicon Devices - A Novel Low Noise IMPATT DiodeHerbert, D.C. et al. | 2000
- 207
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Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon filmsGiust, G.K. / Sigmon, T.W. et al. | 2000
- 207
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PAPERS - Silicon Devices - Laser-Processed Thin-Film Transistors Fabricated from Sputtered Amorphous-Silicon FilmGiust, G.K. et al. | 2000
- 207
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Laser-Processed Thin-Film Transistors Fabricated from Sputtered Amorphous-Silicon FilmGiust, G. K. / Sigmon, T. W. et al. | 2000
- 214
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PAPERS - Silicon Devices - A General Approach to Compact Threshold Voltage Formulation Based on 2-D Numerical Simulation and Experimental Correlation for Deep-Submicron ULSI Technology DevelopmentZhou, X. et al. | 2000
- 214
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A General Approach to Compact Threshold Voltage Formulation Based on 2-D Numerical Simulation and Experimental Correlation for Deep-Submicron ULSI Technology DevelopmentZhou, X. / Lim, K. Y. / Lim, D. et al. | 2000
- 222
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New Formulas of Interconnect Capacitances Based on Results of Conformal Mapping MethodStellari, F. / Lacaita, A. L. et al. | 2000
- 222
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PAPERS - Solid-State Device Phenomena - New Formulas of Interconnect Capacitances Based on Results of Conformal Mapping MethodStellari, F. et al. | 2000
- 232
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PAPERS - Solid-State Device Phenomena - On the Performance Limits for Si MOSFET's: A Theoretical StudyAssad, F. et al. | 2000
- 232
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On the Performance Limits for Si MOSFET's: A Theoretical StudyAssad, F. / Ren, Z. / Vasileska, D. / Datta, S. / Lundstrom, M. et al. | 2000
- 241
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PAPERS - Solid-State Device Phenomena - Very Large Radiative Transfer over Small Distances from a Black Body for Thermophotovoltaic ApplicationsPan, J.L. et al. | 2000
- 241
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Very Large Radiative Transfer over Small Distances from a Black Body for Thermophotovoltaic ApplicationsPan, J. L. / Choy, H. K. / Fonstad, C. G. et al. | 2000
- 250
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Improved Monte Carlo algorithm for the simulation of delta -doped AlInAs/GaInAs HEMTsMateos, J. / Gonzalez, T. / Pardo, D. / Hoel, V. / Happy, H. / Cappy, A. et al. | 2000
- 250
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Improved Monte Carlo Algorithm for the Simulation of delta-Doped AIInAs/GaInAs HEMT'sMateos, J. / Gonzalez, T. / Pardo, D. / Hoel, V. / Happy, H. / Cappy, A. et al. | 2000
- 250
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BRIEFS - Improved Monte Carlo Algorithm for the Simulation of d-Doped AlInAs-GaInAs HEMT'sMateos, J. et al. | 2000
- 253
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BRIEFS - Computational Investigation of Helical Traveling Wave Tube Transverse RF Field ForcesKory, C.L. et al. | 2000
- 253
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Computational Investigation of Helical Traveling Wave Tube Transverse RF Field ForcesKory, C. L. / Dayton, J. A. et al. | 2000
- 257
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ANNOUNCEMENTS - Call for Papers -- IEEE TRANSACTIONS ON ELECTRON DEVICES Special Issue on Group III-Nitride Semiconductor Electronics| 2000
- 258
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ANNOUNCEMENTS - Call for Papers -- IEEE TRANSACTIONS ON ELECTRON DEVICES Special Issue on Vacuum Electronics| 2000
- 259
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IEEE Copyright Form| 2000
- 261
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PAPERS - Compound Semiconductor Devices - Hot Electron Effects on Al0.25Ga0.75As-GaAs Power HFET's Under Off-State and On-State Electrical Stress ConditionsDieci, D. et al. | 2000
- 261
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Hot Electron Effects on Al~0~.~2~5Ga~0~.~7~5As/GaAs Power HFET's Under Off-State and On-State Electrical Stress ConditionsDieci, D. / Menozzi, R. / Lanzieri, C. / Polenta, L. / Canali, C. et al. | 2000
- 269
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Measurement of High-Field Electron Transport in Silicon CarbideKhan, I. A. / Cooper, J. A. et al. | 2000
- 269
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PAPERS - Compound Semiconductor Devices - Measurement of High-Field Electron Transport in Silicon CarbideKhan, I.A. et al. | 2000
- 274
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Analysis of the Short-Term DC-Current Gain Variation During High Current Density-Low Temperature Stress of AlGaAs/GaAs Heterojunction Bipolar TransistorsBovolon, N. / Schultheis, R. / Muller, J. E. / Zwicknagl, P. et al. | 2000
- 274
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PAPERS - Compound Semiconductor Devices - Analysis of the Short-Term DC-Current Gain Variation During High Current Density-Low Temperature Stress of AlGaAs-GaAs Heterojunction Bipolar TransistorsBovolon, N. et al. | 2000
- 282
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PAPERS - Compound Semiconductor Devices - Determination of Energetic Distribution of Interface States Between Gate Metal and Semiconductor in Sub-Micron Devices from Current-Voltage CharacteristicsDhar, S. et al. | 2000
- 282
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Determination of Energetic Distribution of Interface States Between Gate Metal and Semiconductor in Sub-Micron Devices from Current-Voltage CharacteristicsDhar, S. / Balakrishnan, V. R. / Kumar, V. / Ghosh, S. et al. | 2000
- 288
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PAPERS - Compound Semiconductor Devices - Direct Extraction Technique to Derive the Junction Temperature of HBT's Under High Self-Heating Bias ConditionsMarsh, S.P. et al. | 2000
- 288
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Direct Extraction Technique to Derive the Junction Temperature of HBT's Under High Self-Heating Bias ConditionsMarsh, S. P. et al. | 2000
- 292
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The Influence of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT's for Precision Analog CircuitsSalmon, S. L. / Cressler, J. D. / Jaeger, R. C. / Harame, D. L. et al. | 2000
- 292
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PAPERS - Compound Semiconductor Devices - The Influence of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT's for Precision Analog CircuitsSalmon, S.L. et al. | 2000
- 299
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Optimization of Active Channel Thickness of mm-Wavelength GaAs MESFET's by Using a Nonlinear I-V ModelAhmed, M. M. et al. | 2000
- 299
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PAPERS - Compound Semiconductor Devices - Optimization of Active Channel Thickness of mm-Wavelength GaAs MESFET's by Using a Nonlinear I-V ModelAhmed, M.M. et al. | 2000
- 304
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PAPERS - Compound Semiconductor Devices - Annealing Behavior of a Proton Irradiated AlxGa1-xN-GaN High Electron Mobility Transistor Grown by MBECai, S.J. et al. | 2000
- 304
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Annealing Behavior of a Proton Irradiated Al~xGa~1~-~xN/GaN High Electron Mobility Transistor Grown by MBECai, S. J. / Tang, Y. S. / Li, R. / Wei, Y. Y. / Wong, L. / Chen, Y. L. / Wang, K. L. / Chen, M. / Zhao, Y. F. / Schrimpf, R. D. et al. | 2000
- 308
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Carrier Transport Related Analysis of High-Power AlGaN/GaN HEMT StructuresShah, P. B. / Smith, D. D. / Griffin, T. E. / Jones, K. A. / Sheppard, S. T. et al. | 2000
- 308
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PAPERS - Compound Semiconductor Devices - Carrier Transport Related Analysis of High-Power AlGaN-GaN HEMT StructuresShah, P.B. et al. | 2000
- 313
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Small Area Versus Narrow Line Width Effects on the C49 to C54 Transformation of TiSi~2DiGregorio, J. F. / Wall, R. N. et al. | 2000
- 313
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PAPERS - Materials Processing and Packaging - Small Area Versus Narrow Line Width Effects on the C49 to C54 Transformation of TiSi2DiGregorio, J.F. et al. | 2000
- 318
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Electrical Modeling of Interface Roughness in Thin Film Electroluminescent DevicesNeyts, K. / De Visschere, P. / Soenen, B. / Stuyven, G. et al. | 2000
- 318
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PAPERS - Optoelectronics, Display, Imaging - Electrical Modeling of Interface Roughness in Thin Film Electroluminescent DevicesNeyts, K. et al. | 2000
- 326
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PAPERS - Optoelectronics, Display, Imaging - Long-Wavelength 256 x 256 GaAs-AlGaAs Quantum Well Infrared Photodetector (QWIP) Palm-Size CameraGunapala, S.D. et al. | 2000
- 326
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Long-Wavelength 256 x 256 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Palm-Size CameraGunapala, S. D. / Bandara, S. V. / Liu, J. K. / Luong, E. M. / Stetson, N. / Shott, C. A. / Bock, J. J. / Rafol, S. B. / Mumolo, J. M. / McKelvey, M. J. et al. | 2000
- 333
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Study on the Generation Process of the Discharge for Color Plasma Displays Based on the Observation by Using an Ultra-High-Speed Electronic CameraZhang, S. / Sawa, M. / Uchiike, H. / Yoshida, K. et al. | 2000
- 333
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PAPERS - Optoelectronics, Display, Imaging - Study on the Generation Process of the Discharge for Color Plasma Displays Based on the Observation by Using an Ultra-High-Speed Electronic CameraZhang, S. et al. | 2000
- 340
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PAPERS - Sensors and Actuators - A Pulsed Mode Micromachined Flow Sensor with Temperature Drift CompensationOkulan, N. et al. | 2000
- 340
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A Pulsed Mode Micromachined Flow Sensor with Temperature Drift CompensationOkulan, N. / Henderson, H. T. / Ahn, C. H. et al. | 2000
- 348
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PAPERS - Silicon Devices - A New Charge Pumping Technique for Profiling the Interface-States and Oxide-Trapped ChargesChu, Y. et al. | 2000
- 348
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A New Charge Pumping Technique for Profiling the Interface-States and Oxide-Trapped ChargesChu, Y. / Lin, D. W. / Wu, C. Y. et al. | 2000
- 354
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Highly Suppressed Short-Channel Effects in Ultrathin SOI n-MOSFET'sSuzuki, E. / Ishii, K. / Kanemaru, S. / Maeda, T. / Tsutsumi, T. / Sekigawa, T. / Nagai, K. / Hiroshima, H. et al. | 2000
- 354
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PAPERS - Silicon Devices - Highly Suppressed Short-Channel Effects in Ultrathin SOI n-MOSFET'sSuzuki, E. et al. | 2000
- 360
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PAPERS - Silicon Devices - New Aspects and Mechanism of Kink Effect in Static Back-Gate Transconductance Characteristics in Fully-Depleted SOI MOSFET's on High-Dose SIMOX WafersUshiki, T. et al. | 2000
- 360
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New Aspects and Mechanism of Kink Effect in Static Back-Gate Transconductance Characteristics in Fully-Depleted SOI MOSFET's on High-Dose SIMOX WafersUshiki, T. / Kotani, K. / Funaki, T. / Kawai, K. / Ohmi, T. et al. | 2000
- 367
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PAPERS - Silicon Devices - Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Plasma Treated Silicon NitrideLim, B.C. et al. | 2000
- 367
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Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Plasma Treated Silicon NitrtideLim, B. C. / Choi, Y. J. / Choi, J. H. / Jang, J. et al. | 2000
- 372
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PAPERS - Silicon Devices - Transport Model in n++-poly-SiOx-SiO2-p-sub MOS Capacitors for Low-Voltage Nonvolatile Memory ApplicationsIrrera, F. et al. | 2000
- 372
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Transport Model in n^+^+-poly/SiO~x/SiO~2/p-sub MOS Capactiors for Low-Voltage Nonvolatile Memory ApplicationsIrrera, F. / Marangelo, L. et al. | 2000
- 378
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PAPERS - Silicon Devices - Degredation of Oxides and Oxynitrides Under Hot Hole StressZhang, J.F. et al. | 2000
- 378
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Degradation of oxides and oxynitrides under hot hole stressZhang, J.F. / Sii, H.K. / Groesendeken, G. / Degraeve, R. et al. | 2000
- 378
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Degredation of Oxides and Oxynitrides Under Hot Hole StressZhang, J. F. / Sii, H. K. / Groeseneken, G. / Degraeve, R. et al. | 2000
- 387
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PAPERS - Silicon Devices - Self-Heating and Kink Effects in a-Si: H Thin Film TransistorsWang, L. et al. | 2000
- 387
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Self-Heating and Kink Effects in a-Si: H Thin Film TransistorsWang, L. / Fjeldly, T. A. / Iniguez, B. / Slade, H. C. / Shur, M. et al. | 2000
- 398
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PAPERS - Silicon Devices - Simulation of Degradation of Dielectric Breakdown Field of Thermal SiO2 Films due to Voids in Si WafersSatoh, Y. et al. | 2000
- 398
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Simulation of Degradation of Dielectric Breakdown Field of Thermal SiO~2 Films due to Voids in Si WafersSatoh, Y. / Shiota, T. / Furuya, H. et al. | 2000
- 404
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PAPERS - Silicon Devices - High Performance Low Temperature Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin Film Transistors for System-on-Panel ApplicationsMeng, Z. et al. | 2000
- 404
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High Performance Low Temperature Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin Film Transistors for System-on-Panel ApplicationsMeng, Z. / Wang, M. / Wong, M. et al. | 2000
- 410
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Integration of a Particle-Particle-Particle-Mesh Algorithm with the Ensemble Monte Carlo Method for the Simulation of Ultra-Small Semiconductor DevicesWordelman, C. J. / Ravaioli, U. et al. | 2000
- 410
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PAPERS - Silicon Devices - Integration of a Particle-Particle-Particle-Mesh Algorithm with the Ensemble Monte Carlo Method for the Simulation of Ultra-Small Semiconductor DevicesWordelman, C.J. et al. | 2000
- 417
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Long-Term Stability and Electrical Properties of Compensation Doped Poly-Si IC-ResistorsRydberg, M. / Smith, U. et al. | 2000
- 417
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PAPERS - Silicon Devices - Long-Term Stability and Electrical Properties of Compensation Doped Poly-Si IC-ResistorsRydberg, M. et al. | 2000
- 427
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PAPERS - Silicon Devices - Comparison of the New VBIC and Conventional Gummel-Poon Bipolar Transistor ModelsCao, X. et al. | 2000
- 427
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Comparison of the New VBIC and Conventional Gummel-Poon Bipolar Transistor ModelsCao, X. / McMacken, J. / Stiles, K. / Layman, P. / Liou, J. J. / Ortiz-Conde, A. / Moinian, S. et al. | 2000
- 434
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Current Induced Degredation in GaAs HBT'sAdlerstein, M. G. / Gering, J. M. et al. | 2000
- 434
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PAPERS - Device Phenomena - Current Induced Degredation in GaAs HBT'sAdlerstein, M.G. et al. | 2000
- 434
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Current induced degradation in GaAs HBT'sAdlerstein, M.G. / Gering, J.M. et al. | 2000
- 440
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Estimation of the Effects of Remote Charge Scattering on Electron Mobility of n-MOSFET's with Ultrathin Gate OxidesYang, N. / Henson, W. K. / Hauser, J. R. / Wortman, J. J. et al. | 2000
- 440
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PAPERS - Device Phenomena - Estimation of the Effects of Remote Charge Scattering on Electron Mobility of n-MOSFET's with Ultrathin Gate OxidesYang, N. et al. | 2000
- 448
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Characterization and Simulation of GaSb Device-Related PropertiesStollwerck, G. / Sulima, O. V. / Bett, A. W. et al. | 2000
- 448
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PAPERS - Device Phenomena - Characterization and Simulation of GaSb Device-Related PropertiesStollwerck, G. et al. | 2000
- 458
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PAPERS - Device Phenomena - High-Temperature Characteristics of High-Quality SiC MIS Capacitors with O-N-O Gate DielectricWang, X.W. et al. | 2000
- 458
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High-Temperature Characteristics of High-Quality SiC MIS Capacitors with O/N/O Gate DielectricWang, X. W. / Luo, Z. J. / Ma, T. P. et al. | 2000
- 464
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PAPERS - Device Phenomena - A p-Channel MOS Synapse Transistor with Self-Convergent Memory WritesDiorio, C. et al. | 2000
- 464
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A p-Channel MOS Synapse Transistor with Self-Convergent Memory WritesDiorio, C. et al. | 2000
- 473
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Latent Damage Investigation on Lateral Nonuniform Charge Generation and Stress-Induced Leakage Current in Silicon Dioxide Subjected to High-Field Current Impulse StressingChim, W. K. / Lim, P. S. et al. | 2000
- 473
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PAPERS - Device Phenomena - Latent Damage Investigation on Lateral Nonuniform Charge Generation and Stress-Induced Leakage Current in Silicon Dioxide Subjected to High-Field Current Impulse StressingChim, W.-K. et al. | 2000
- 482
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PAPERS - Solid-State Power and High Voltage - The 2.45 GHz 36 W CW Si Recessed Gate Type SIT with High Gain and High Voltage OperationNishizawa, J. et al. | 2000
- 482
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The 2.45 GHz 36 W CW Si Recessed Gate Type SIT with High Gain and High Voltage OperationNishizawa, J. / Motoya, K. / Itoh, A. et al. | 2000
- 488
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Lower Limit of Method for the Extraction of Ionization Coefficients from the Electrical Characteristics of Heterojunction Bipolar TransistorsShamir, N. / Ritter, D. et al. | 2000
- 488
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BRIEFS - Lower Limit of Method for the Extraction of Ionization Coefficients from the Electrical Characteristics of Heterojunction Bipolar TransistorsShamir, N. et al. | 2000
- 493
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Comparison Between Wurtzite Phase and Zincblende Phase GaN MESFET's Using a Full Band Monte Carlo SimulationFarahmand, M. / Brennan, K. F. et al. | 2000
- 493
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PAPERS - Compound Semiconductor Devices - Comparison Between Wurtzite Phase and Zincblende Phase GaN MESFET's Using a Full Band Monte Carlo SimulationFarahmand, M. et al. | 2000
- 498
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Mechanism for Recoverable Power Drift in PHEMT'sLeoni, R. E. / Bao, J. / Bu, J. / Du, X. / Shirokov, M. S. / Hwang, J. C. et al. | 2000
- 498
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PAPERS - Compound Semiconductor Devices - Mechanism for Recoverable Power Drift in PHEMT'sLeoni III, R.E. et al. | 2000
- 507
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Epitaxially-Grown GaN Junction Field Effect TransistorsZhang, L. / Lester, L. F. / Baca, A. G. / Shul, R. J. / Chang, P. C. / Willison, C. G. / Mishra, U. K. / Denbaars, S. P. / Zolper, J. C. et al. | 2000
- 507
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PAPERS - Compound Semiconductor Devices - Epitaxially-Grown GaN Junction Field Effect TransistorsZhang, L. et al. | 2000
- 512
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PAPERS - Compound Semiconductor Devices - Very Slow Charge Trapping and Release in Ion Implanted GaAsChiu, C.-H. et al. | 2000
- 512
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Very slow charge trapping and release in ion implanted GaAs (MESFETs)Chiu, C.H. / Boroumand, F.A. / Swanson, J.G. et al. | 2000
- 512
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Very Slow Charge Trapping and Release in Ion Implanted GaAsChiu, C. H. / Boroumand, F. A. / Swanson, J. G. et al. | 2000
- 517
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PAPERS - Compound Semiconductor Devices - Suppression of Gate Leakage Current in n-AlGaAs-GaAs Power HEMT'sNagayama, A. et al. | 2000
- 517
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Suppression of Gate Leakage Current in n-AlGaAs/GaAs Power HEMT'sNagayama, A. / Yamauchi, S. / Hariu, T. et al. | 2000
- 523
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PAPERS - Materials Processing and Packaging - Models of Boron Redistribution During Thermal Oxidation with General Oxidation RateSuzuki, K. et al. | 2000
- 523
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Models of Boron Redistribution During Thermal Oxidation with General Oxidation RateSuzuki, K. / Miyashita, T. et al. | 2000
- 529
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Numerical simulation of neutron radiation effects in avalanche photodiodesOsborne, M.D. / Hobson, P.R. / Watts, S.J. et al. | 2000
- 529
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PAPERS - Optoelectronics, Displays, Imaging - Numerical Simulation of Neutron Radiation Effects in Avalanche PhotodiodesOsborne, M.D. et al. | 2000
- 537
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PAPERS - Optoelectronics, Displays, Imaging - Low-Frequency Noise in Single Growth Planar Separate Absorption, Grading, Charge, and Multiplication Avalanche PhotodiodesAn, S. et al. | 2000
- 537
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Low-Frequency Noise in Single Growth Planar Separate Absorption, Grading, Charge, and Multiplication Avalanche PhotodiodesAn, S. / Deen, M. J. et al. | 2000
- 544
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Theoretical Analysis of the Detectivity in N-p and P-n GaSb/GaInAsSb Infrared PhotodetectorsTian, Y. / Zhang, B. / Zhou, T. / Jiang, H. / Jin, Y. et al. | 2000
- 544
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PAPERS - Optoelectronics, Displays, Imaging - Theoretical Analysis of the Detectivity in N-p and P-n GaSb-GaInAsSb Infrared PhotodetectorsTian, Y. et al. | 2000
- 553
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High-Selectivity Single-Chip Spectrometer in Silicon for Operation at Visible Part of the SpectrumCorreia, J. H. / Bartek, M. / Wolffenbuttel, R. F. et al. | 2000
- 553
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PAPERS - Sensors and Actuators - High-Selectivity Single-Chip Spectrometer in Silicon for Operation at Visible Part of the SpectrumCorreia, J.H. et al. | 2000
- 560
-
Physical Modeling of Spiral Inductors on SiliconYue, C. P. / Wong, S. S. et al. | 2000
- 560
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PAPERS - Silicon Devices - Physical Modeling of Spiral Inductors on SiliconYue, C.P. et al. | 2000
- 569
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Ultra-Thin Elevated Channel Poly-Si TFT Technology for Fully-Integrated AMLCD System on GlassZhang, S. / Zhu, C. / Sin, J. K. / Li, J. N. / Mok, P. K. et al. | 2000
- 569
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PAPERS - Silicon Devices - Ultra-Thin Elevated Channel Poly-Si TFT Technology for Fully-Integrated AMLCD System on GlassZhang, S. et al. | 2000
- 576
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Interfacial Electronic Traps in Surface Controlled TransistorsCai, J. / Sah, C. T. et al. | 2000
- 576
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PAPERS - Silicon Devices - Interfacial Electronic Traps in Surface Controlled TransistorsCai, J. et al. | 2000
- 584
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PAPERS - Silicon Devices - Fabrication and Performance of Selective HSG Storage Cells for 256 Mb and 1 Gb DRAM ApplicationsBanerjee, A. et al. | 2000
- 584
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Fabrication and Performance of Selective HSG Storage Cells for 256 Mb and 1 Gb DRAM ApplicationsBanerjee, A. / Wise, R. L. / Plumton, D. L. / Bevan, M. / Pas, M. F. / Crenshaw, D. L. / Aoyama, S. / Mansoori, M. M. et al. | 2000
- 593
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PAPERS - Silicon Devices - The Behavior of Narrow-Width SOI MOSFET's with MESA IsolationWang, H. et al. | 2000
- 593
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The Behavior of Narrow-Width SOI MOSFET's with MESA IsolationWang, H. / Chan, M. / Wang, Y. / Ko, P. K. et al. | 2000
- 601
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PAPERS - Solid-State Device Phenomena - Limitations of Conductance to the Measurement of the Interface State Density of MOS Capacitors with Tunneling Gate DielectricsVogel, E.M. et al. | 2000
- 601
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Limitations of Conductance to the Measurement of the Interface State Density of MOS Capacitors with Tunneling Gate DielectricsVogel, E. M. / Henson, W. K. / Richter, C. A. et al. | 2000
- 609
-
A Probe Detector for Defectivity Assessment in p-n JunctionsZanchi, A. / Zappa, F. / Ghioni, M. et al. | 2000
- 609
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PAPERS - Solid-State Device Phenomena - A Probe Detector for Defectivity Assessment in p-n JunctionsZanchi, A. et al. | 2000
- 617
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Two-Dimensional Analysis of Substrate-Trap Effects on Turn-On Characteristics in GaAs MESFET'sHorio, K. / Wakabayashi, A. / Yamada, T. et al. | 2000
- 617
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PAPERS - Solid-State Device Phenomena - Two-Dimensional Analysis of Substrate-Trap Effects on Turn-On Characteristics in GaAs MESFET'sHorio, K. et al. | 2000
- 625
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Dead-Space-Based Theory Correctly Predicts Excess Noise Factor for Thin GaAs and AlGaAs Avalanche PhotodiodesSaleh, M. A. / Hayat, M. M. / Saleh, B. E. / Teich, M. C. et al. | 2000
- 625
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PAPERS - Solid-State Device Phenomena - Dead-Space-Based Theory Correctly Predicts Excess Noise Factor for Thin GaAs and AlGaAs Avalanche PhotodiodesSaleh, M.A. et al. | 2000
- 634
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Analysis of a Large-Orbit Gyrotron in a Coaxial Waveguide Under Assistant Background FieldsMuralidhar, Y. / Jain, P. K. / Basu, B. N. et al. | 2000
- 634
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PAPERS - Vacuum Electron Devices - Analysis of a Large-Orbit Gyrotron in a Coaxial Waveguide Under Assistant Background FieldsMuralidhar, Y. et al. | 2000
- 643
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BRIEFS - An Experimental Study of the Effect of Quantization on the Effective Electrical Oxide Thickness in MOS Electron and Hole Accumulation Layers in Heavily Doped SiChindalore, G. et al. | 2000
- 643
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An Experimental Study of the Effect of Quantization on the Effective Electrical Oxide Thickness in MOS Electron and Hole Accumulation Layers in Heavily Doped SiChindalore, G. / Shih, W. K. / Jallepalli, S. / Hareland, S. A. / Tasch, A. F. / Maziar, C. M. et al. | 2000
- 646
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BRIEFS - A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Submicron MOSFET'sÇelik-Butler, Z. et al. | 2000
- 646
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A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Submicron MOSFET'sCelik-Butler, Z. / Vasina, P. / Amarasinghe, N. V. et al. | 2000
- 648
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A Channel Resistance Derivative Method for Effective Channel Length Extraction in LDD MOSFET'sNiu, G. / Cressler, J. D. / Mathew, S. J. / Subbanna, S. et al. | 2000
- 648
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BRIEFS - A Channel Resistance Derivative Method for Effective Channel Length Extraction in LDD MOSFET'sNiu, G. et al. | 2000
- 650
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BRIEFS - Characterization of Leakage Current in Thin Gate Oxide Subjected to 10 KeV X-Ray IrradiationLing, C.H. et al. | 2000
- 650
-
Characterization of Leakage Current in Thin Gate Oxide Subjected to 10 KeV X-Ray IrradiationLing, C. H. / Ang, C. H. / Ang, D. S. et al. | 2000
- 653
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BRIEFS - Enhanced Corrugated QWIP Performance Using Dielectric CoverageDas, N.C. et al. | 2000
- 653
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Enhanced Corrugated QWIP Performance Using Dielectric CoverageDas, N. C. / Choi, K. K. et al. | 2000
- 655
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Shallow Source/Drain Extension Effects on External Resistance in Sub-0.1 mum MOSFET'sChoi, C. H. / Goo, J. S. / Yu, Z. / Dutton, R. W. et al. | 2000
- 655
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BRIEFS - Shallow Source-Drain Extension Effects on External Resistance in Sub-0.1 mm MOSFET'sChoi, C.-H. et al. | 2000
- 662
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PAPERS - Compound Semiconductor Devices - Base Transit Time in Abrupt GaN-InGaN-GaN HBT'sChiu, S.-Y. et al. | 2000
- 662
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Base Transit Time in Abrupt GaN/InGaN/GaN HBT'sChiu, S. Y. / Anwar, A. F. / Wu, S. et al. | 2000
- 667
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PAPERS - Compound Semiconductor Devices - A Simple Yet Comprehensive Unified Physical Model of the Donor Layer Electrons in Delta-Doped and Uniformly Doped HEMT'sKarmalkar, S. et al. | 2000
- 667
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A Simple Yet Comprehensive Unified Physical Model of the Donor Layer Electrons in Delta-Doped and Uniformly Doped HEMT'sKarmalkar, S. / Rao, R. R. et al. | 2000
- 677
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Relation Between Low-Frequency Noise and Long-Term Reliability of Single AlGaAs/GaAs Power HBT'sMohammadi, S. / Pavlidis, D. / Bayraktaroglu, B. et al. | 2000
- 677
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PAPERS - Compound Semiconductor Devices - Relation Between Low-Frequency Noise and Long-Term Reliability of Single AlGaAs-GaAs Power HBT'sMohammadi, S. et al. | 2000
- 687
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PAPERS - Compound Semiconductor Devices - High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6H-SiCSchmid, U. et al. | 2000
- 687
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High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6H-SiCSchmid, U. / Sheppard, S. T. / Wondrak, W. et al. | 2000
- 692
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PAPERS - Compound Semiconductor Devices - High Voltage GaN Schottky RectifiersDang, G.T. et al. | 2000
- 692
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High Voltage GaN Schottky RectifiersDang, G. T. / Zhang, A. P. / Ren, F. / Cao, X. A. / Pearton, S. J. / Cho, H. / Han, J. / Chyi, J. I. / Lee, C. M. / Chuo, C. C. et al. | 2000
- 697
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PAPERS - Sensors and Actuators - Tunnel Magnetoresistance Devices Processed by Oxidation in Air and UV Assisted Oxidation in OxygenGirgis, E. et al. | 2000
- 697
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Tunnel Magnetoresistance Devices Processed by Oxidation in Air and UV Assisted Oxidation in OxygenGirgis, E. / Schelten, J. / Gruenberg, P. / Rottlaender, P. / Kohlstedt, H. et al. | 2000
- 702
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PAPERS - Sensors and Actuators - A High-Speed Capacitive Humidity Sensor with On-Chip Thermal ResetKang, U. et al. | 2000
- 702
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A High-Speed Capacitive Humidity Sensor with On-Chip Thermal ResetKang, U. / Wise, K. D. et al. | 2000
- 711
-
Double Sided Minority Carrier Collection in Silicon Solar CellsVan Kerschaver, E. / Zechner, C. / Dicker, J. et al. | 2000
- 711
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PAPERS - Silicon Devices - Double Sided Minority Carrier Collection in Silicon Solar CellsKerschaver, E.Van et al. | 2000
- 718
-
Explaning the Dependences of the Hole and Electron Mobilities in Si Inversion LayersPirovano, A. / Lacaita, A. L. / Zandler, G. / Oberhuber, R. et al. | 2000
- 718
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PAPERS - Silicon Devices - Explaining the Dependences of the Hole and Electron Mobilities in Si Inversion LayersPirovano, A. et al. | 2000
- 718
-
Explaining the dependences of the hole and electron mobilities in Si inversion layersPirovano, A. / Lacaita, A.L. / Zandler, G. / Oberhuber, R. et al. | 2000
- 725
-
A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron VLSI CMOS Devices Using Shallow Trench IsolationLin, S. C. / Kuo, J. B. / Huang, K. T. / Sun, S. W. et al. | 2000
- 725
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PAPERS - Silicon Devices - A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron VLSI CMOS Devices Using Shallow Trench IsolationLin, S.-C. et al. | 2000
- 734
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A Four-Step Method for De-Embedding Gigahertz On-Wafer CMOS MeasurementsKolding, T. E. et al. | 2000
- 734
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PAPERS - Silicon Devices - A Four-Step Method for De-Embedding Gigahertz On-Wafer CMOS MeasurementsKolding, T.E. et al. | 2000
- 741
-
PAPERS - Silicon Devices - Dielectric Breakdown Mechanism of Thin-SiO2 Studied by the Post-Breakdown Resistance StatisticsSatake, H. et al. | 2000
- 741
-
Dielectric Breakdown Mechanism of Thin-SiO~2 Studied by the Post-Breakdown Resistance StatisticsSatake, H. / Toriumi, A. et al. | 2000
- 746
-
PAPERS - Silicon Devices - Effect of Physical Stress on the Degredation of Thin SiO2 Films Under Electrical StressYang, T.-C. et al. | 2000
- 746
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Effect of Physical Stress on the Degredation of Thin SiO~2 Films Under Electrical StressYang, T. C. / Saraswat, K. C. et al. | 2000
- 746
-
Effect of physical stress on the degradation of thin SiO2 films under electrical stressYang, T.C. / Saraswat, K.C. et al. | 2000
- 756
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PAPERS - Silicon Devices - New Channel Engineering for Sub-100 nm MOS Devices Considering Both Carrier Velocity Overshoot and Statistical Performance FluctuationsMizuno, T. et al. | 2000
- 756
-
New Channel Engineering for Sub-100 nm MOS Devices Considering Both Carrier Velocity Overshoot and Statistical Performance FluctuationsMizuno, T. et al. | 2000
- 762
-
Characterization of Shallow Silicided Junctions for Sub-Quarter Micron ULSI Technology-Extraction of Silicidation Induced Schottky Contact AreaLee, H. D. et al. | 2000
- 762
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PAPERS - Silicon Devices - Characterization of Shallow Silicided Junctions for Sub-Quarter Micron ULSJ Technology -- Extraction of Silicidation Induced Schottky Contact AreaLee, H.-D. et al. | 2000
- 768
-
PAPERS - Silicon Devices - A Physical Thermal Noise Model for SOI MOSFETJin, W. et al. | 2000
- 768
-
A Physical Thermal Noise Model for SOI MOSFETJin, W. / Chan, P. C. / Lau, J. et al. | 2000
- 774
-
PAPERS - Silicon Devices - Theoretical Study of Deep-Trap-Assisted Anomalous Currents in Worst-Bit Cells of Dynamic Random-Access MemoriesYamaguchi, K. et al. | 2000
- 774
-
Theoretical Study of Deep-Trap-Assisted Anomalous Currents in Worst-Bit Cells of Dynamic Random-Access MemoriesYamaguchi, K. et al. | 2000
- 781
-
FRAM Cell Design with High Immunity to Fatigue and Imprint for 0.5 mum 3 1T1C Mbit FRAMTanaka, S. / Ogiwara, R. / Itoh, Y. / Miyakawa, T. / Takeuchi, Y. / Doumae, S. / Takenaka, H. / Kamata, H. et al. | 2000
- 781
-
PAPERS - Silicon Devices - FRAM Cell Design with High Immunity to Fatigue and Imprint for 0.5 mm 3 V ITIC 1 Mbit FRAMTanaka, S. et al. | 2000
- 789
-
Device Scaling Effects on Hot-Carrier Induced Interface and Oxide-Trapped Charge Distributions in MOSFET'sMahapatra, S. / Parikh, C. D. / Rao, V. R. / Viswanathan, C. R. / Vasi, J. et al. | 2000
- 789
-
PAPERS - Silicon Devices - Device Scaling Effects on Hot-Carrier Induced Interface and Oxide-Trapped Charge Distributions in MOSFET'sMahapatra, S. et al. | 2000
- 797
-
PAPERS - Silicon Devices - An Electrical Method for Measuring the Difference in Bandgap across the Neutral Base in SiGe HBT'sTang, Y.T. et al. | 2000
- 797
-
An Electrical Method for Measuring the Difference in Bandgap across the Neutral Base in SiGe HBT'sTang, Y. T. / Hamel, J. S. et al. | 2000
- 805
-
PAPERS - Silicon Devices - Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate OxideAsenov, A. et al. | 2000
- 805
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Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate OxideAsenov, A. / Saini, S. et al. | 2000
- 813
-
Design Optimization of High-Performance Low-Temperature 0.18 mum MOSFET's with Low-Impurity-Density Channels at Supply Voltage Below 1 VXu, J. / Cheng, M. C. et al. | 2000
- 813
-
PAPERS - Silicon Devices - Design Optimization of High-Performance Low-Temperature 0.18 mm MOSFET's with Low-Impurity-Density Channels at Supply Voltage Below 1 VXu, J. et al. | 2000
- 822
-
PAPERS - Silicon Devices - Isolation Edge Effect Depending on Gate Length of MOSFET's with Various Isolation StructuresOishi, T. et al. | 2000
- 822
-
Isolation Edge Effect Depending on Gate Length of MOSFET's with Various Isolation StructuresOishi, T. / Shiozawa, K. / Furukawa, A. / Abe, Y. / Tokuda, Y. et al. | 2000
- 828
-
PAPERS - Silicon Devices - Trading-Off Programming Speed and Current Absorption in Flash Memories with the Ramped-Gate Programming TechniqueEsseni, D. et al. | 2000
- 828
-
Trading-Off Programming Speed and Current Absorption in Flash Memories with the Ramped-Gate Programming TechniqueEsseni, D. / Villa, C. / Tassan, S. / Ricco, B. et al. | 2000
- 835
-
PAPERS - Silicon Devices - Gate Length Scalability of n-MOSFET's Down to 30 nm: Comparison Between LDD and Non-LDD StructuresMurakami, E. et al. | 2000
- 835
-
Gate Length Scalability of n-MOSFET's Down to 30 nm: Comparison Between LDD and Non-LDD StructuresMurakami, E. / Yoshimura, T. / Goto, Y. / Kimura, S. et al. | 2000
- 841
-
PAPERS - Silicon Devices - New Self-Adjusted Dynamic Source Multilevel P-Channel Flash MemoryLin, R.-L. et al. | 2000
- 841
-
New Self-Adjusted Dynamic Source Multilevel P-Channel Flash MemoryLin, R. L. / Chang, T. / Wang, A. C. / Hsu, C. C. et al. | 2000
- 848
-
High-Performance Deep Submicron CMOS Technologies with Polycrystalline-SiGe GatesPonomarev, Y. V. / Stolk, P. A. / Salm, C. / Schmitz, J. / Woerlee, P. H. et al. | 2000
- 848
-
PAPERS - Silicon Devices - High-Performance Deep Submicron CMOS Technologies with Polycrystalline-SiGe GatesPonomarev, Y.V. et al. | 2000
- 856
-
Transistor Characteristics of 14-nm-Gate-Length EJ-MOSFET'sKawaura, H. / Sakamoto, T. / Baba, T. / Ochiai, Y. / Fujita, J. / Sone, J. et al. | 2000
- 856
-
PAPERS - Silicon Devices - Transistor Characteristics of 14-nm-Gate-Length EJ-MOSFET'sKawaura, H. et al. | 2000
- 861
-
A New Substrate Current Model for Submicron MOSFET'sKolhatkar, J. S. / Dutta, A. K. et al. | 2000
- 861
-
PAPERS - Silicon Devices - A New Substrate Current Model for Submicron MOSFET'sKolhatkar, J.S. et al. | 2000
- 864
-
RF Potential of a 0.18-mum CMOS Logic Device TechnologyBurghartz, J. N. / Hargrove, M. / Webster, C. S. / Groves, R. A. / Keene, M. / Jenkins, K. A. / Logan, R. / Nowak, E. et al. | 2000
- 864
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PAPERS - Silicon Devices - RF Potential of a 0.18-mm CMOS Logic Device TechnologyBurghartz, J.N. et al. | 2000
- 871
-
Universal Impurity Ionization Parameters in MIS C-V Freeze-Out Characteristics and Direct Extraction of Surface Doping ConcentrationBouillon, P. / Gwoziecki, R. / Skotnicki, T. / Alieu, J. / Gentil, P. et al. | 2000
- 871
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PAPERS - Solid-State Device Phenomena - Universal Impurity Ionization Parameters in MIS C-V Freeze-Out Characteristics and Direct Extraction of Surface Doping ConcentrationBouillon, P. et al. | 2000
- 878
-
PAPERS - Solid-State Device Phenomena - Surface Geometric Effects on Tunneling RatesEncinosa, M. et al. | 2000
- 878
-
Surface Geometric Effects on Tunneling RatesEncinosa, M. et al. | 2000
- 883
-
PAPERS - Solid-State Device Phenomena - Temperature Dependent Minority Electron Mobilities in Strained Si1-xGex (0.2 <= x <= 0.4) LayersRieh, J.-S. et al. | 2000
- 883
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Temperature Dependent Minority Electron Mobilities in Strained Si~1~-~xGe~x (0.2Rieh, J. S. / Bhattacharya, P. K. / Croke, E. T. et al. | 2000
- 891
-
Limitations of the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of L~e~f~f and R~s~d of LDD MOSFET'sAhmed, K. / Osburn, C. / Wortman, J. / Hauser, J. et al. | 2000
- 891
-
BRIEFS - Limitations of the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of Lcff and of Rsd of LDD MOSFET'sAhmed, K. et al. | 2000
- 893
-
A Three Terminal Varactor for RF IC's in Standard CMOS TechnologySvelto, F. / Manzini, S. / Castello, R. et al. | 2000
- 893
-
BRIEFS - A Three Terminal Varactor for RF IC's in Standard CMOS TechnologySvelto, F. et al. | 2000
- 895
-
Novel AlInAsSb/InGaAs Heterostructure for Double-Barrier Resonant Tunneling DiodeSu, Y. K. / Chang, J. R. / Lu, Y. T. / Lin, C. L. / Wu, K. M. et al. | 2000
- 895
-
BRIEFS - Novel AlInAsSb-InGaAs Heterostructure for Double-Barrier Resonant Tunneling DiodeSu, Y.-K. et al. | 2000
- 897
-
Theory of the Single Contact Electron Beam Induced Current EffectOng, V. K. / Lau, K. T. / Ma, J. G. et al. | 2000
- 897
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BRIEFS - Theory of the Single Contact Electron Beam Induced Current EffectOng, V.K.S. et al. | 2000
- 900
-
CORRESPONDENCE - Comments on "A Numerical Analysis of the Storage Times of Dynamic Random-Access Memory Cells Incorporating Ultrathin Dielectrics"Yu, Y.S. et al. | 2000
- 900
-
Comments on "A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics"Yun Seop Yu, / Sung Woo Hwang, / Du-Heon Song, / Kyeong Ho Lee, et al. | 2000
- 903
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ANNOUNCEMENTS - Call for Papers -- International Semiconductor Conference, October 2000| 2000
- 904
-
ANNOUNCEMENTS - 12th International Conference on Indium Phosphide and Related Materials, May 2000| 2000
- 905
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An Analytic Model for Estimating the Length of the Velocity Saturated Region in GaAs MESFET'sLeifso, C. / Haslett, J. W. et al. | 2000
- 905
-
PAPERS - Compound Semiconductor Devices - An Analytic Model for Estimating the Length of the Velocity Saturated Region in GaAs MESFET'sLeifso, C. et al. | 2000
- 910
-
PAPERS - Compound Semiconductor Devices - Avalanche Noise Characteristics of Thin GaAs Structures with Distributed Carrier GenerationLi, K.F. et al. | 2000
- 910
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Avalanche Noise Characteristics of Thin GaAs Structures with Distributed Carrier GenerationLi, K. F. / Ong, D. S. / David, J. P. / Tozer, R. C. / Rees, G. J. / Plimmer, S. A. / Chang, K. Y. / Roberts, J. S. et al. | 2000
- 915
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Numerical Modeling of Energy Balance Equations in Quantum Well Al~xGa~1~-~x As/GaAs p-i-n PhotodiodesFardi, H. Z. / Winston, D. W. / Hayes, R. E. / Hanna, M. C. et al. | 2000
- 915
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PAPERS - Compound Semiconductor Devices - Numerical Modeling of Energy Balance Equations in Quantum Well AlxGa1-xAs-GaAs p-i-n PhotodiodesFardi, H.Z. et al. | 2000
- 922
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PAPERS - Compound Semiconductor Devices - A Physical Model for the Kink Effect in InAlAs-InGaAs HEMT'sSomerville, M.H. et al. | 2000
- 922
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A Physical Model for the Kink Effect in InAlAs/InGaAs HEMT'sSomerville, M. H. / Ernst, A. / del Alamo, J. A. et al. | 2000
- 931
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PAPERS - Optoelectronics, Displays, Imaging - Combined Optical-Electric Simulation of CCD Cell Structures by Means of the Finite-Difference Time-Domain MethodKörner, T.O. et al. | 2000
- 931
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Combined Optical/Electric Simulation of CCD Cell Structures by Means of the Finite-Difference Time-Domain MethodKorner, T. O. / Gull, R. et al. | 2000
- 939
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PAPERS - Optoelectronics, Displays, Imaging - An a-SiGe:H Phototransistor Integrated with a Pd Film on Glass Substrate for Hydrogen MonitoringHsieh, W.T. et al. | 2000
- 939
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An a-SiGe:H Phototransistor Integrated with a Pd Film on Glass Substrate for Hydrogen MonitoringHsieh, W. T. / Fang, Y. K. / Lee, W. J. / Wu, K. H. / Ho, J. J. / Chen, K. H. / Huang, S. Y. et al. | 2000
- 944
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Design and Characterization of Superlattice Infrared Photodetector Operating at Low Bias VoltageHsu, M. C. / Hsu, Y. F. / Lin, S. Y. / Kuan, C. H. et al. | 2000
- 944
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PAPERS - Optoelectronics, Displays, Imaging - Design and Characterization of Superlattice Infrared Photodetector Operating at Low Bias VoltageHsu, M.C. et al. | 2000
- 949
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Analysis and Reduction of Signal Readout Circuitry Temporal Noise in CMOS Image Sensors for Low-Light LevelsDegerli, Y. / Lavernhe, F. / Magnan, P. / Farre, J. A. et al. | 2000
- 949
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PAPERS - Optoelectronics, Displays, Imaging - Analysis and Reduction of Signal Readout Circuitry Temporal Noise in CMOS Image Sensors for Low-Light LevelsDegerli, Y. et al. | 2000
- 963
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640 x 486 Long-Wavelength Two-Color GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array CameraGunapala, S. D. / Bandara, S. V. / Singh, A. / Liu, J. K. / Rafol, S. B. / Luong, E. M. / Mumolo, J. M. / Tran, N. Q. / Ting, D. Z. / Vincent, J. D. et al. | 2000
- 963
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PAPERS - Optoelectronics, Displays, Imaging - 640 x 486 Long-Wavelength Two-Color GaAs-AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array CameraGunapala, S.D. et al. | 2000
- 972
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Magnetic Field Measurements with a Novel Surface Micromachined Magnetic-Field SensorEmmerich, H. / Schofthaler, M. et al. | 2000
- 972
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PAPERS - Sensors and Actuators - Magnetic Field Measurements with a Novel Surface Micromachined Magnetic-Field SensorEmmerich, H. et al. | 2000
- 978
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Impact of CdTe/CdZnTe Substrate Resistivity on Performance Degradation of Long-Wavelength n^+-on-p HgCdTe Infrared PhotodiodesDhar, V. / Garg, A. K. / Bhan, R. K. et al. | 2000
- 978
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PAPERS - Sensors and Actuators - Impact of CdTe-CdZnTe Substrate Resistivity on Performance Degradation of Long-Wavelength n+-on-p HgCdTe Infrared PhotodiodesDhar, V. et al. | 2000
- 987
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PAPERS - Silicon Devices - Comprehensive Study of Rapid, Low-Cost Silicon Surface Passivation TechnologiesRohatgi, A. et al. | 2000
- 987
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Comprehensive Study of Rapid, Low-Cost Silicon Surface Passivation TechnologiesRohatgi, A. / Doshi, P. / Moschner, J. / Lauinger, T. / Aberle, A. / Ruby, D. S. et al. | 2000
- 994
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The Effect of Co Incorporation on Electrical Characteristics of n^+/p Shallow Junction Formed by Dopant Implantation into CoSi~2 and AnnealPark, J. S. / Sohn, D. K. / Bae, J. U. / Han, C. H. / Park, J. W. et al. | 2000
- 994
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PAPERS - Silicon Devices - The Effect of Co Incorporation on Electrical Characteristics of n+-p Shallow Junction Formed by Dopant Implantation into CoSi2 and AnnealPark, J.-S. et al. | 2000
- 999
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Impact of Electron and Hole Inversion-Layer Capacitance on Low Voltage Operation of Scaled n- and p-MOSFET'sTakagi, S. / Takayanagi, M. / Toriumi, A. et al. | 2000
- 999
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PAPERS - Silicon Devices - Impact of Electron and Hole Inversion-Layer Capacitance on Low Voltage Operation of Scaled n- and p-MOSFET'sTakagi, S. et al. | 2000
- 1006
-
An Analytical Model for Breakdown Voltage of Surface Implanted SOI RESURF LDMOSChung, S. K. et al. | 2000
- 1006
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PAPERS - Silicon Devices - An Analytical Model for Breakdown Voltage of Surface Implanted SOI RESURF LDMOSChung, S.-K. et al. | 2000
- 1010
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PAPERS - Silicon Devices - A New Quantum Effect Model for Practical Device SimulationShigyo, N. et al. | 2000
- 1010
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A New Quantum Effect Model for Practical Device SimulationShigyo, N. / Tanimoto, H. et al. | 2000
- 1013
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Hot-Carrier Degradation Behavior of Thin-Film SOI nMOSFET with Isolation Scheme and Buried Oxide ThicknessLee, J. W. / Kim, H. K. / Lee, W. H. / Oh, M. R. / Koh, Y. H. et al. | 2000
- 1013
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PAPERS - Silicon Devices - Hot-Carrier Degradation Behavior of Thin-Film SOI nMOSFET with Isolation Scheme and Buried Oxide ThicknessLee, J.-W. et al. | 2000
- 1018
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PAPERS - Silicon Devices - A Review of the Pseudo-MOS Transistor in SOI Wafers: Operation, Parameter Extraction, and ApplicationsCristoloveanu, S. et al. | 2000
- 1018
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A Review of the Pseudo-MOS Transistor in SOI Wafers: Operation, Parameter Extraction, and ApplicationsCristoloveanu, S. / Munteanu, D. / Liu, M. S. et al. | 2000
- 1028
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PAPERS - Silicon Devices - High Performance Damascene Metal Gate MOSFET's for 0.1 mm RegimeYagishita, A. et al. | 2000
- 1028
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High Performance Damascene Metal Gate MOSFET's for 0.1 mum RegimeYagishita, A. / Saito, T. / Nakajima, K. / Inumiya, S. / Akasaka, Y. / Ozawa, Y. / Hieda, K. / Tsunashima, Y. / Suguro, K. / Arikado, T. et al. | 2000
- 1035
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A Strategy for Modeling of Variations due to Grain Size in Polycrystalline Thin-Film TransistorsWang, A. W. / Saraswat, K. C. et al. | 2000
- 1035
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PAPERS - Silicon Devices - A Strategy for Modeling of Variations due to Grain Size in Polycrystalline Thin-Film TransistorsWang, A.W. et al. | 2000
- 1044
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PAPERS - Silicon Devices - A Better Insight into the Performance of Silicon BJT's Featuring Highly Nonuniform Collector Doping ProfilesPalestri, P. et al. | 2000
- 1044
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A Better Insight into the Performance of Silicon BJT's Featuring Highly Nonuniform Collector Doping ProfilesPalestri, P. / Fiegna, C. / Selmi, L. / Peter, M. S. / Hurkx, G. A. / Slotboom, J. W. / Sangiorgi, E. et al. | 2000
- 1052
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Coupled Drift-Diffusion/Quantum Transmitting Boundary Method Simulations of Thin Oxide Devices with Specific Application to a Silicon Based Tunnel Switch DiodeDaniel, E. S. / Cartoixa, X. / Frensley, W. R. / Ting, D. Z. / McGill, T. C. et al. | 2000
- 1052
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PAPERS - Silicon Devices - Coupled Drift-Diffusion-Quantum Transmitting Boundary Method Simulations of Thin Oxide Devices with Specific Application to a Silicon Based Tunnel Switch DiodeDaniel, E.S. et al. | 2000
- 1061
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Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film TransistorsWong, M. / Jin, Z. / Bhat, G. A. / Wong, P. / Kwok, H. S. et al. | 2000
- 1061
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PAPERS - Silicon Devices - Characterization of the MIC-MILC Interface and Its Effects on the Performance of MILC Thin-Film TransistorsWong, M. et al. | 2000
- 1068
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RF Performance Degradation in nMOS Transistors due to Hot Carrier EffectsPark, J. T. / Lee, B. J. / Kim, D. W. / Yu, C. G. / Yu, H. K. et al. | 2000
- 1068
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PAPERS - Silicon Devices - RF Performance Degradation in nMOS Transistors due to Hot Carrier EffectsPark, J.-T. et al. | 2000
- 1073
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On-Chip Characterization of Interconnect Parameters and Time Delay in 0.18 mum CMOS Technology for ULSI Circuit ApplicationsLee, H. D. / Kim, D. M. / Jang, M. J. et al. | 2000
- 1073
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PAPERS - Silicon Devices - On-Chip Characterization of Interconnect Parameters and Time Delay in 0.18 mm CMOS Technology for ULSI Circuit ApplicationsLee, H.-D. et al. | 2000
- 1080
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PAPERS - Solid-State Device Phenomena - The Merits and Limitations of Local Impact Ionization TheoryPlimmer, S.A. et al. | 2000
- 1080
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The Merits and Limitations of Local Impact Ionization TheoryPlimmer, S. A. / David, J. P. / Ong, D. S. et al. | 2000
- 1089
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Avalanche Multiplication in Al~xGa~1~-~xAs (x = 0 to 0.60)Plimmer, S. A. / David, J. P. / Grey, R. / Rees, G. J. et al. | 2000
- 1089
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PAPERS - Solid-State Device Phenomena - Avalanche Multiplication in AlxGa1-xAs (xPlimmer, S.A. et al. | 2000
- 1098
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Theoretical and Experimental Characterization of Self-Heating in Silicon Integrated Devices Operating at Low TemperaturesDe la Hidalga, F. J. / Deen, M. J. / Gutierrez, E. A. et al. | 2000
- 1098
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PAPERS - Solid-State Device Phenomena - Theoretical and Experimental Characterization of Self-Heating in Silicon Integrated Devices Operating at Low TemperaturesHidalga, F.J.De la et al. | 2000
- 1107
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PAPERS - Solid-State Device Phenomena - Temperature Dependence and Electrical Properties of Dominant Low-Frequency Noise Source in SiGe HBTBruce, S. et al. | 2000
- 1107
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Temperature Dependence and Electrical Properties of Dominant Low-Frequency Noise Source in SiGe HBTBruce, S. / Vandamme, L. K. / Rydberg, A. et al. | 2000
- 1113
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BRIEFS - Alternating-Current Thin-Film Electroluminescent Device Modeling via SPICE Fowler-Nordheim DiodeBender, J.P. et al. | 2000
- 1113
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Alternating-Current Thin-Film Electroluminescent Device Modeling via SPICE Fowler-Nordheim DiodeBender, J. P. / Wager, J. F. et al. | 2000
- 1115
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BRIEFS - Fabrication of Strained and Double Heterojunction InxGa1-xP-In0.2Ga0.8As High Electron Mobility Transistors Grown by Solid-Source Molecular Beam EpitaxyYoon, S.F. et al. | 2000
- 1115
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Fabrication of Strained and Double Heterojunction In~xGa~1~-~xP/In~0~.~2Ga~0~.~8As High Electron Mobility Transistors Grown by Solid-Source Molecular Beam EpitaxyYoon, S. F. / Gay, B. P. / Zheng, H. Q. / Kam, H. T. / Degenhardt, J. et al. | 2000
- 1118
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On the Behavior of p-n Junction Solar Cells Made in Fine-Grained Silicon LayersBeaucarne, G. / Poortmans, J. / Caymax, M. / Nijs, J. / Mertens, R. et al. | 2000
- 1118
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BRIEFS - On the Behavior of p-n Junction Solar Cells Made in Fine-Grained Silicon LayersBeaucarne, G. et al. | 2000
- 1118
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On the behaviour of p-n junction solar cells made in fine-grained silicon layersBeaucarne, G. / Poortmans, J. / Caymax, M. / Nijs, J. / Mertens, R. et al. | 2000
- 1120
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On the Origin of the Dispersion of Erased Threshold Voltages in Flash EEPROM Memory CellsEsseni, D. / Ricco, B. et al. | 2000
- 1120
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BRIEFS - On the Origin of the Dispersion of Erased Threshold Voltages in Flash EEPROM Memory CellsEsseni, D. et al. | 2000
- 1124
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ANNOUNCEMENTS - Call for Papers -- 2000 IEEE International SOI Conference| 2000
- 1125
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PAPERS - Compound Semiconductor Devices - Avalanche Multiplication in InP-InGaAs Double Heterojunction Bipolar Transistors with Composite CollectorWang, H. et al. | 2000
- 1125
-
Avalanche Multiplication in InP/InGaAs Double Heterojunction Bipolar Transistors with Composite CollectorWang, H. / Ng, G.-I. et al. | 2000
- 1134
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PAPERS - Compound Semiconductor Devices - A Planar Gate Double Beryllium Implanted GaAs Power MESFET for Low Voltage Digital Wireless Communication ApplicationChang, E.Y. et al. | 2000
- 1134
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A Planar Gate Double Beryllium Implanted GaAs Power MESFET for Low Voltage Digital Wireless Communication ApplicationChang, E. Y. / Fuh, C.-S. / Meng, C.-C. / Wang, K. B. / Chen, S. H. et al. | 2000
- 1139
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PAPERS - Compound Semiconductor Devices - Stepping Toward Standard Methods of Small-Signal Parameter Extraction for HBT'sSotoodeh, M. et al. | 2000
- 1139
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Stepping Toward Standard Methods of Small-Signal Parameter Extraction for HBT'sSotoodeh, M. / Sozzi, L. / Vinay, A. / Khalid, A. H. / Hu, Z. / Rezazadeh, A. A. / Menozzi, R. et al. | 2000
- 1152
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Integrated GaAs Schottky Mixers by Spin-on-Dielectric Wafer BondingMarazita, S. M. / Bishop, W. L. / Hesler, J. L. / Hui, K. / Bowen, W. E. / Crowe, T. W. et al. | 2000
- 1152
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PAPERS - Materials Processing and Packaging - Integrated GaAs Schottky Mixers by Spin-on-Dielectric Wafer BondingMarazita, S.M. et al. | 2000
- 1158
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PAPERS - Optoelectronics, Displays, Imaging - Optimization Procedure for the Design of Ultrafast, Highly Efficient and Selective Resonant Cavity Enhanced Schottky PhotodiodesJervase, J.A. et al. | 2000
- 1158
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Optimization Procedure for the Design of Ultrafast, Highly Efficient and Selective Resonant Cavity Enhanced Schottky PhotodiodesJervase, J. A. / Bourdoucen, H. et al. | 2000
- 1166
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PAPERS - Silicon Devices - Novel Source-Controlled Self-Verified Programming for Multilevel EEPROM'sLin, F.R.-L. et al. | 2000
- 1166
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Novel Source-Controlled Self-Verified Programming for Multilevel EEPROM'sLin, F. R.-L. / Lin, S.-Y. / Lee, M.-L. / Boe, C.-H. / Yeh, C.-P. / Wu, P.-H. / Ni, J. / King, Y.-C. / Hsu, C. C.-H. et al. | 2000
- 1175
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PAPERS - Silicon Devices - CMOS Shallow-Trench-Isolation to 50-nm Channel WidthsVanDerVoorn, P. et al. | 2000
- 1175
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CMOS Shallow-Trench-Isolation to 50-nm Channel WidthsVanDerVoorn, P. / Gan, D. / Krusius, J. P. et al. | 2000
- 1183
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Reliability of Ultrathin Silicon Dioxide Under Combined Substrate Hot-Electron and Constant Voltage Tunneling StressVogel, E. M. / Suehle, J. S. / Edelstein, M. D. / Wang, B. / Chen, Y. / Bernstein, J. B. et al. | 2000
- 1183
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PAPERS - Silicon Devices - Reliability of Ultrathin Silicon Dioxide Under Combined Substrate Hot-Electron and Constant Voltage Tunneling StressVogel, E.M. et al. | 2000
- 1192
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PAPERS - Silicon Devices - Physical Noise Modeling of SOI MOSFET's with Analysis of the Lorentzian Component in the Low-Frequency Noise SpectrumWorkman, G.O. et al. | 2000
- 1192
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Physical Noise Modeling of SOI MOSFET's with Analysis of the Lorentzian Component in the Low-Frequency Noise SpectrumWorkman, G. O. / Fossum, J. G. et al. | 2000
- 1202
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Short Channel MOSFET Model Using a Universal Channel Depletion Width ParameterSuzuki, K. et al. | 2000
- 1202
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PAPERS - Silicon Devices - Short Channel MOSFET Model Using a Universal Channel Depletion Width ParameterSuzuki, K. et al. | 2000
- 1209
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PAPERS - Silicon Devices - Novel Self-Limiting High-Speed Program Scheme of P-Channel DINOR Flash Memory with N-Channel Select TransistorsOhnakado, T. et al. | 2000
- 1209
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Novel Self-Limiting High-Speed Program Scheme of P-Channel DINOR Flash Memory with N-Channel Select TransistorsOhnakado, T. / Satoh, S. et al. | 2000
- 1214
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PAPERS - Silicon Devices - On the Reverse Short Channel Effect in Deep Submicron Heterojunction MOSFET's and Its Impact on the Current-Voltage BehaviorCollaert, N. et al. | 2000
- 1214
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On the Reverse Short Channel Effect in Deep Submicron Heterojunction MOSFET's and Its Impact on the Current-Voltage BehaviorCollaert, N. / Verheyen, P. / De Meyer, K. et al. | 2000
- 1221
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PAPERS - Silicon Devices - Approach to Electrochemical C-V Profiling in Semiconductor with Sub-Debye-Length ResolutionShashkin, V.I. et al. | 2000
- 1221
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Approach to Electrochemical C-V Profiling in Semiconductor with Sub-Debye-Length ResolutionShashkin, V. I. / Karetnikova, I. R. / Murel, A. / Nefedov, I. / Shereshevskii, I. A. et al. | 2000
- 1225
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PAPERS - Silicon Devices - Analysis of the Relationship Between Defect Site Generation and Dielectric Breakdown Utilizing A-Mode Stress Induced Leakage CurrentOkada, K. et al. | 2000
- 1225
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Analysis of the Relationship Between Defect Site Generation and Dielectric Breakdown Utilizing A-Mode Stress Induced Leakage CurrentOkada, K. et al. | 2000
- 1231
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PAPERS - Silicon Devices - On the Design Robustness of Threshold Logic Gates Using Multi-Input Floating Gate MOS TransistorsLuck, A. et al. | 2000
- 1231
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On the Design Robustness of Threshold Logic Gates Using Multi-Input Floating Gate MOS TransistorsLuck, A. / Jung, S. / Brederlow, R. / Thewes, R. / Goser, K. / Weber, W. et al. | 2000
- 1241
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Simulation of Schottky Barrier MOSFET's with a Coupled Quantum Injection/Monte Carlo TechniqueWinstead, B. / Ravaioli, U. et al. | 2000
- 1241
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PAPERS - Silicon Devices - Simulation of Schottky Barrier MOSFET's with a Coupled Quantum Injection-Monte Carlo TechniqueWinstead, B. et al. | 2000
- 1247
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PAPERS - Solid-State Device Phenomena - Monte Carlo Study of Sub-0.1 mm Si0.97C0.03-Si MODFET: Electron Transport and Device PerformanceDollfus, P. et al. | 2000
- 1247
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Monte Carlo Study of Sub-0.1 mum Si~0~.~9~7C~0~.~0~3/Si MODFET: Electron Transport and Device PerformanceDollfus, P. / Galdin, S. / Hesto, P. / Velazquez, J. E. et al. | 2000
- 1251
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Electrical/Thermal Properties of Nonplanar Polyoxides and the Consequent Effects for EEPROM Cell OperationMattausch, H. J. / Baumgartner, H. / Allinger, R. / Kerber, M. / Braun, H. et al. | 2000
- 1251
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PAPERS - Solid-State Device Phenomena - Electrical-Thermal Properties of Nonplanar Polyoxides and the Consequent Effects for EEPROM Cell OperationMattausch, H.J. et al. | 2000
- 1258
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PAPERS - Solid-State Device Phenomena - Modeling of SILC Based on Electron and Hole Tunneling -- Part I: Transient EffectsIelmini, D. et al. | 2000
- 1258
-
Modeling of SILC based on electron and hole tunneling. I. Transient effectsIelmini, D. / Spinelli, A.S. / Rigamonti, M.A. / Lacaita, A.L. et al. | 2000
- 1258
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Modeling of SILC Based on Electron and Hole Tunneling-Part I: Transient EffectsIelmini, D. / Spinelli, A. S. / Rigamonti, M. A. / Lacaita, A. L. et al. | 2000
- 1266
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Modeling of SILC Based on Electron and Hole Tunneling-Part II: Steady-StateIelmini, D. / Spinelli, A. S. / Rigamonti, M. A. / Lacaita, A. L. et al. | 2000
- 1266
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PAPERS - Solid-State Device Phenomena - Modeling of SILC Based on Electron and Hole Tunneling -- Part II: Steady-StateIelmini, D. et al. | 2000
- 1266
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Modeling of SILC based on electron and hole tunneling. II. Steady-stateIelmini, D. / Spinelli, A.S. / Rigamonti, M.A. / Lacaita, A.L. et al. | 2000
- 1273
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PAPERS - Solid-State Device Phenomena - A New Approach for Computing the Bandwidth Statistics of Avalanche PhotodiodesHayat, M.M. et al. | 2000
- 1273
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A New Approach for Computing the Bandwidth Statistics of Avalanche PhotodiodesHayat, M. M. / Dong, G. et al. | 2000
- 1280
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A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped RegionsChen, X. B. / Wang, X. / Sin, J. K. O. et al. | 2000
- 1280
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PAPERS - Solid-State Power and High Voltage - A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped RegionsChen, X.B. et al. | 2000
- 1286
-
PAPERS - Vacuum Electron Devices - Theory of Long-Term Gain Growth in Traveling Wave TubesGoebel, D.M. et al. | 2000
- 1286
-
Theory of Long-Term Gain Growth in Traveling Wave TubesGoebel, D. M. et al. | 2000
- 1293
-
Monte Carlo Simulations for Tilted-Channel Electron MultipliersChoi, Y. S. / Kim, J. M. et al. | 2000
- 1293
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PAPERS - Vacuum Electron Devices - Monte Carlo Simulations for Tilted-Channel Electron MultipliersChoi, Y.S. et al. | 2000
- 1297
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BRIEFS - Fast Tunneling Programming of Nonvolatile MemoriesVersari, R. et al. | 2000
- 1297
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Fast Tunneling Programming of Nonvolatile MemoriesVersari, R. / Pieracci, A. / Morigi, D. / Ricco, B. et al. | 2000
- 1300
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A Physically-Based Semi-Empirical Series Resistance Model for Deep-Submicron MOSFET I-V ModelingLim, K. Y. / Zhou, X. et al. | 2000
- 1300
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BRIEFS - A Physically-Based Semi-Empirical Series Resistance Model for Deep-Submicron MOSFET I-V ModelingLim, K.Y. et al. | 2000
- 1303
-
Simplified Method to Investigate Quantum Mechanical Effects in MOS Structure Inversion LayerMa, Y. / Liu, L. / Yu, Z. / Li, Z. et al. | 2000
- 1303
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BRIEFS - Simplified Method to Investigate Quantum Mechanical Effects in MOS Structure Inversion LayerMa, Y. et al. | 2000
- 1306
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ANNOUNCEMENTS - Call for Papers -- IEEE International Electron Devices Meeting, December 2000| 2000
- 1307
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ANNOUNCEMENTS - Call for Papers -- IEEE International Integrated Reliability Workshop, October 2000| 2000
- 1308
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ANNOUNCEMENTS - Call for Papers -- 13th International Symposium on Power Semiconductor Devices and IC's, June 2001| 2000
- 1309
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SPECIAL SECTION ON 1999 EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE - Editorial -- Expanded Papers from the 1999 European Solid-State Device Research ConferenceJindal, R.P. et al. | 2000
- 1309
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Expanded Papers from the 1999 European Solid-State Device Research ConferenceJindal, R. P. et al. | 2000
- 1310
-
Theory and Small Signal Analysis for a New Bipolar Injection Transit Time Device (BIPOLITT)Chen, L. / Pan, D.-S. et al. | 2000
- 1310
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PAPERS - Compound Semiconductor Devices - Theory and Small Signal Analysis for a New Bipolar Injection Transit Time Device (BIPOLITT)Chen, L. et al. | 2000
- 1315
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Modeling of Current Gain's Temperature Dependence in Heterostructure-Emitter Bipolar TransistorsYang, E. S. / Hsu, C. C. / Lo, H. B. / Yang, Y.-F. et al. | 2000
- 1315
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PAPERS - Compound Semiconductor Devices - Modeling of Current Gain's Temperature Dependence in Heterostructure-Emitter Bipolar TransistorsYang, E.S. et al. | 2000
- 1320
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GaN N- and P-Type Schottky Diodes: Effect of Dry Etch DamageCao, X. A. / Pearton, S. J. / Dang, G. T. / Zhang, A. P. / Ren, F. / Van Hove, J. M. et al. | 2000
- 1320
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PAPERS - Materials Processing and Packaging - GaN N- and P-Type Schottky Diodes: Effect of Dry Etch DamageCao, X.A. et al. | 2000
- 1325
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Comparison of Hole and Electron Intersubband Absorption Strengths for Quantum Well Infrared PhotodetectorsPan, J. L. / Fonstad, C. G. et al. | 2000
- 1325
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PAPERS - Optoelectronics, Displays, Imaging - Comparison of Hole and Electron Intersubband Absorption Strengths for Quantum Well Infrared PhotodetectorsPan, J.L. et al. | 2000
- 1330
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The Red Shift of ZnSSe Metal-Semiconductor-Metal Light Emitting Diodes with High Injection CurrentsSu, Y. K. / Chen, W. R. / Chang, S. J. / Juang, F. S. / Lan, W. H. / Lin, A. C. H. / Chang, H. et al. | 2000
- 1330
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PAPERS - Optoelectronics, Displays, Imaging - The Red Shift of ZnSSe Metal-Semiconductor-Metal Light Emitting Diodes with High Injection CurrentsSu, Y.K. et al. | 2000
- 1334
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PAPERS - Optoelectronics, Displays, Imaging - Dynamic Performance of UV Photodetectors Based on Polycrystalline DiamondSalvatori, S. et al. | 2000
- 1334
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Dynamic Performance of UV Photodetectors Based on Polycrystalline DiamondSalvatori, S. / Rossi, M. C. / Galluzzi, F. et al. | 2000
- 1341
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Stress Induced Leakage Current Analysis via Quantum Yield ExperimentsGhetti, A. / Alam, M. / Bude, J. / Monroe, D. / Sangiorgi, E. / Vaidya, H. et al. | 2000
- 1341
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PAPERS - Reliability - Stress Induced Leakage Current Analysis via Quantum Yield ExperimentsGhetti, A. et al. | 2000
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PAPERS - Reliability - Comparative Physical and Electrical Metrology of Ultrathin Oxides in the 6 to 1.5 nm RegimeAhmed, K. et al. | 2000
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Comparative Physical and Electrical Metrology of Ultrathin Oxides in the 6 to 1.5 nm RegimeAhmed, K. / Ibok, E. / Bains, G. / Chi, D. / Ogle, B. / Wortman, J. J. / Hauser, J. R. et al. | 2000
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PAPERS - Silicon Devices - Plasma-Induced Charging Damage in Ultrathin (3-nm) Gate OxidesChen, C.-C. et al. | 2000
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Plasma-Induced Charging Damage in Ultrathin (3-nm) Gate OxidesChen, C.-C. / Lin, H.-C. / Chang, C.-Y. / Liang, M.-S. / Chien, C.-H. / Hsien, S.-K. / Huang, T.-Y. / Chao, T.-S. et al. | 2000
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The Performance and Reliability of PMOSFET's with Ultrathin Silicon Nitride/Oxide Stacked Gate Dielectrics with Nitrided Si-SiO~2 Interfaces Prepared by Remote Plasma Enhanced CVD and Post-Deposition Rapid Thermal AnnealingWu, Y. / Lucovsky, G. / Lee, Y.-M. et al. | 2000
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PAPERS - Silicon Devices - The Performance and Reliability of PMOSFET's with Ultrathin Silicon Nitride-Oxide Stacked Gate Dielectrics with Nitrided Si-SiO2 Interfaces Prepared by Remote Plasma Enhanced CVD and Post-Deposition Rapid Thermal AnnealingWu, Y. et al. | 2000
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PAPERS - Silicon Devices - Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale IntegrationSekine, K. et al. | 2000
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Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale IntegrationSekine, K. / Saito, Y. / Hirayama, M. / Ohmi, T. et al. | 2000
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Performance of the Floating Gate/Body Tied NMOSFET Photodetector on SOI SubstrateZhang, W. / Chan, M. / Ko, P. K. et al. | 2000
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PAPERS - Silicon Devices - Performance of the Floating Gate-Body Tied NMOSFET Photodetector on SOI SubstrateZhang, W. et al. | 2000
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Inverse Modeling of Two-Dimensional MOSFET Dopant Profile via Capacitance of the Source/Drain Gated DiodeChiang, C. Y. T. / Yeow, Y. T. / Ghodsi, R. et al. | 2000
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PAPERS - Silicon Devices - Inverse Modeling of Two-Dimensional MOSFET Dopant Profile via Capacitance of the Source-Drain Gated DiodeChiang, C.Y.T. et al. | 2000