Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon (English)
- New search for: Kalkofen, B.
- New search for: Amusan, A. A.
- New search for: Lisker, M.
- New search for: Burte, E. P.
- New search for: Kalkofen, B.
- New search for: Amusan, A. A.
- New search for: Lisker, M.
- New search for: Burte, E. P.
In:
MICROELECTRONIC ENGINEERING
;
109
;
113-116
;
2013
-
ISSN:
- Article (Journal) / Print
-
Title:Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon
-
Contributors:Kalkofen, B. ( author ) / Amusan, A. A. ( author ) / Lisker, M. ( author ) / Burte, E. P. ( author )
-
Published in:MICROELECTRONIC ENGINEERING ; 109 ; 113-116
-
Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
-
Publication date:2013-01-01
-
Size:4 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 621.381
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 621.381 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 109
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structureJasiński, Jakub / Mazurak, Andrzej / Majkusiak, Bogdan et al. | 2013
- 5
-
Charge trapping processes at memory window formation in single- and double nanocrystal layered NVMsIevtukh, V. / Nazarov, A. / Turchanikov, V. / Lysenko, V. / Nassiopoulou, A. et al. | 2013
- 10
-
Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structuresBae, Sung-Bum / Kim, Ki-Won / Lee, Yong Soo / Lee, Jung-Hee / Bae, Youngho / Cristoloveanu, Sorin et al. | 2013
- 13
-
X-ray and photoelectron spectroscopic nondestructive methods for thin films and interfaces study. Application to SrTiO3 based heterostucturesFilatova, E.O. / Kozhevnikov, I.V. / Sokolov, A.A. / Yegorova, Yu V. / Konashuk, A.S. / Vilkov, O.Yu / Schaefers, F. / Gorgoi, M. / Shulakov, A.S. et al. | 2013
- 17
-
Improved programming and erasing speeds of poly-Si flash memory device by HfO2/Si3N4 bandgap-engineered trapping layerChen, Chun-Yuan / Chang-Liao, Kuei-Shu / Ho, Hao-Wei / Wang, Tien-Ko et al. | 2013
- 21
-
Electronic structure of oxygen vacancies in hafnium oxidePerevalov, T.V. / Aliev, V.Sh. / Gritsenko, V.A. / Saraev, A.A. / Kaichev, V.V. et al. | 2013
- 24
-
Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTsWang, Cong / Cho, Sung-Jin / Kim, Nam-Young et al. | 2013
- 28
-
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacksChang, C.-Y. / Yokoyama, M. / Kim, S.-H. / Ichikawa, O. / Osada, T. / Hata, M. / Takenaka, M. / Takagi, S. et al. | 2013
- 31
-
Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperaturesTyagulskii, I.P. / Tyagulskii, S.I. / Nazarov, A.N. / Lysenko, V.S. / Cherkaoui, K. / Hurley, P.K. et al. | 2013
- 35
-
Gate-first n-MOSFET with a sub-0.6-nm EOT gate stackCheng, C.H. / Chou, K.I. / Chin, A. et al. | 2013
- 39
-
Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimizationTang, Baojun / Toledano-Luque, M. / Zhang, W.D. / Van den bosch, G. / Degraeve, R. / Zhang, J.F. / Van Houdt, J. et al. | 2013
- 43
-
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structureMa, J. / Zhang, J.F. / Ji, Z. / Benbakhti, B. / Duan, M. / Zhang, W. / Zheng, X.F. / Mitard, J. / Kaczer, B. / Groeseneken, G. et al. | 2013
- 46
-
Si cap passivation for Ge nMOS applicationsSioncke, S. / Vanherle, W. / Art, W. / Ceuppens, J. / Ivanov, Ts. / Lin, D. / Nyns, L. / Delabie, A. / Conard, T. / Struyf, H. et al. | 2013
- 50
-
Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional studyColleoni, Davide / Pasquarello, Alfredo et al. | 2013
- 54
-
Stress induced defect generation implications of doping HfO2 with AlO’Connor, R. / Kauerauf, T. / Arimura, H. / Ragnarsson, L.A. et al. | 2013
- 57
-
Charge trapping and electrical degradation in atomic layer deposited Al2O3 filmsGonzalez, M.B. / Rafí, J.M. / Beldarrain, O. / Zabala, M. / Campabadal, F. et al. | 2013
- 60
-
Defect energy levels of the As–As dimer at InGaAs/oxide interfaces: A first principles studyMiceli, Giacomo / Pasquarello, Alfredo et al. | 2013
- 64
-
Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer depositionLi, Chen-Chien / Chang-Liao, Kuei-Shu / Fu, Chung-Hao / Hsieh, Tsung-Lin / Chen, Li-Ting / Liao, Yu-Liang / Lu, Chun-Chang / Wang, Tien-Ko et al. | 2013
- 68
-
Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculationsEl-Sayed, Al-Moatasem / Watkins, Matthew B. / Shluger, Alexander L. / Afanas’ev, Valeri V. et al. | 2013
- 72
-
Electronic structure of lanthanide oxide high K gate oxidesGillen, R. / Robertson, J. et al. | 2013
- 75
-
Microscopy study of the conductive filament in HfO2 resistive switching memory devicesPrivitera, S. / Bersuker, G. / Butcher, B. / Kalantarian, A. / Lombardo, S. / Bongiorno, C. / Geer, R. / Gilmer, D.C. / Kirsch, P.D. et al. | 2013
- 79
-
Trap density characterization through low-frequency noise in junctionless transistorsDoria, Rodrigo Trevisoli / Trevisoli, Renan Doria / de Souza, Michelly / Pavanello, Marcelo Antonio et al. | 2013
- 83
-
Resistive switching effect on Al2O3/InGaAs stacksPalumbo, F. / Shekhter, P. / Krylov, I. / Ritter, D. / Eizenberg, M. et al. | 2013
- 87
-
Novel multi-bit memory device using metal/PVDF–TrFE/graphene stackHwang, Hyeon Jun / Yang, Jin Ho / Kang, Soo Cheol / Cho, Chunhum / Kang, Chang Goo / Lee, Young Gon / Lee, Byoung Hun et al. | 2013
- 90
-
Identification of the (√E +1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level testsChery, E. / Federspiel, X. / Roy, D. / Volpi, F. / Chaix, J.-M. et al. | 2013
- 94
-
Investigation of MOSC conductance spectra by MPAS techniqueGutt, T. / Przewłocki, H.M. et al. | 2013
- 97
-
Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfacesZhang, R. / Lin, J.C. / Yu, X. / Takenaka, M. / Takagi, S. et al. | 2013
- 101
-
Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistorsShahabuddin, S. / Soin, N. / Goh, K.K. / Abdul Wahab, Y. / Hussin, H. et al. | 2013
- 105
-
RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM applicationde Andrade, Maria Glória Caño / Toledano-Luque, María / Fourati, Fatma / Degraeve, Robin / Martino, João Antonio / Claeys, Cor / Simoen, Eddy / Van den Bosch, Geert / Van Houdt, Jan et al. | 2013
- 109
-
Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on SiNichau, A. / Schäfer, A. / Knoll, L. / Wirths, S. / Schram, T. / Ragnarsson, L.-Å. / Schubert, J. / Bernardy, P. / Luysberg, M. / Besmehn, A. et al. | 2013
- 113
-
Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of siliconKalkofen, Bodo / Amusan, Akinwumi A. / Lisker, Marco / Burte, Edmund P. et al. | 2013
- 117
-
Barrier engineering for double layer CVD graphene tunnel FETsRoy, T. / Hesabi, Z.R. / Joiner, C.A. / Fujimoto, A. / Vogel, E.M. et al. | 2013
- 120
-
Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatmentWang, Jer-Chyi / Chen, Chia-Hsin / Liu, Hsiang-Yu / Lin, Chih-Ting / Lu, Hsin-Chun et al. | 2013
- 123
-
Gate current random telegraph noise and single defect conductionKaczer, B. / Toledano-Luque, M. / Goes, W. / Grasser, T. / Groeseneken, G. et al. | 2013
- 126
-
Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al depositionMather, S. / Sedghi, N. / Althobaiti, M. / Mitrovic, I.Z. / Dhanak, V. / Chalker, P.R. / Hall, S. et al. | 2013
- 129
-
Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundariesIglesias, V. / Martin-Martinez, J. / Porti, M. / Rodriguez, R. / Nafria, M. / Aymerich, X. / Erlbacher, T. / Rommel, M. / Murakami, K. / Bauer, A.J. et al. | 2013
- 133
-
Ultrathin layer transfer technology for post-Si semiconductorsMaeda, Tatsuro / Ishii, Hiroyuki / Itatani, Taro / Mieda, Eiko / Jevasuwan, Wipakorn / Kurashima, Yuichi / Takagi, Hideki / Yasuda, Tetsuji / Takada, Tomoyuki / Yamamoto, Taketsugu et al. | 2013
- 137
-
Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical propertiesHosoi, Takuji / Hideshima, Iori / Tanaka, Ryohei / Minoura, Yuya / Yoshigoe, Akitaka / Teraoka, Yuden / Shimura, Takayoshi / Watanabe, Heiji et al. | 2013
- 142
-
Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memoriesJuan, P.C. / Sun, C.L. / Liu, C.H. / Lin, C.L. / Mong, F.C. / Huang, J.H. / Chang, H.S. et al. | 2013
- 148
-
Optimized electrode and interface for enhanced reliability of high-k based metal–insulator–metal capacitorsKoch, Johannes / Seidel, Konrad / Weinreich, Wenke / Riedel, Stefan / Chiang, Jung-Chin / Beyer, Volkhard et al. | 2013
- 152
-
Epitaxial thin films of BaSrO as gate dielectricIslam, S. / Müller-Sajak, D. / Hofmann, K.R. / Pfnür, H. et al. | 2013
- 156
-
Control of metal/oxide electron barriers in CBRAM cells by low work-function linersDe Stefano, F. / Afanas’ev, V.V. / Houssa, M. / Stesmans, A. / Opsomer, K. / Jurczak, M. / Goux, L. et al. | 2013
- 160
-
Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devicesLee, Seok-Hee / Choi, Rino / Choi, Changhwan et al. | 2013
- 163
-
Modeling thermal effects in nano-devicesVasileska, Dragica et al. | 2013
- 168
-
MOSFET layout modifications for hump effect removalCarmona, M. / Rebuffat, B. / Delalleau, J. / Gagliano, O. / Lopez, L. / Ogier, J.-L. / Goguenheim, D. et al. | 2013
- 172
-
The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structuresJuan, P.C. / Liu, C.H. / Lin, C.L. / Mong, F.C. / Huang, J.H. et al. | 2013
- 177
-
Statistical insight into controlled forming and forming free stacks for HfOx RRAMRaghavan, N. / Fantini, A. / Degraeve, R. / Roussel, P.J. / Goux, L. / Govoreanu, B. / Wouters, D.J. / Groeseneken, G. / Jurczak, M. et al. | 2013
- 182
-
Electrically active interface defects in the In0.53Ga0.47As MOS systemDjara, V. / O’Regan, T.P. / Cherkaoui, K. / Schmidt, M. / Monaghan, S. / O’Connor, É. / Povey, I.M. / O’Connell, D. / Pemble, M.E. / Hurley, P.K. et al. | 2013
- 189
-
Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistorsPark, Sung Min / Lee, Dong Hee / Lim, You Sung / Kim, Dae Kuk / Yi, Moonsuk et al. | 2013
- 193
-
Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminateChakrabarti, B. / Vogel, E.M. et al. | 2013
- 197
-
Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interfaceSuwa, Tomoyuki / Teramoto, Akinobu / Nagata, Kohki / Ogura, Atsushi / Nohira, Hiroshi / Muro, Takayuki / Kinoshita, Toyohiko / Sugawa, Shigetoshi / Ohmi, Tadahiro / Hattori, Takeo et al. | 2013
- 200
-
Influence of La on the electrical properties of HfSiON: From diffusion to V th shiftsHackenberg, M. / Pichler, P. / Baudot, S. / Essa, Z. / Gro-Jean, M. / Tavernier, C. / Schamm-Chardon, S. et al. | 2013
- 204
-
Interface engineering of Ge using thulium oxide: Band line-up studyMitrovic, I.Z. / Althobaiti, M. / Weerakkody, A.D. / Sedghi, N. / Hall, S. / Dhanak, V.R. / Chalker, P.R. / Henkel, C. / Dentoni Litta, E. / Hellström, P.-E. et al. | 2013
- 208
-
Defect densities inside the conductive filament of RRAMsRobertson, J. / Gillen, R. et al. | 2013
- 211
-
Defects at Ge/oxide and III–V/oxide interfacesVan de Walle, C.G. / Choi, M. / Weber, J.R. / Lyons, J.L. / Janotti, A. et al. | 2013
- 216
-
High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structureWu, Min-Lin / Wu, Yung-Hsien / Lyu, Rong-Jhe / Chao, Chun-Yen / Wu, Chao-Yi / Lin, Chia-Chun / Chen, Lun-Lun et al. | 2013
- 220
-
High-k gadolinium and aluminum scandates for hybrid floating gate NAND flashLisoni, Judit G. / Breuil, Laurent / Nyns, Laura / Blomme, Pieter / Van den bosch, Geert / Van Houdt, Jan et al. | 2013
- 223
-
High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatmentsSan Andrés, Enrique / Pampillón, María Ángela / Feijoo, Pedro Carlos / Pérez, Raúl / Cañadilla, Carmina et al. | 2013
- 227
-
Structural, ferroelectric, electronic and transport properties of BaTiO3/Pt heterostructures grown on MgO(001)Minnekaev, M. / Bulakh, K. / Chouprik, A. / Drube, W. / Ershov, P. / Lebedinskii, Yu. / Maksimova, K. / Zenkevich, A. et al. | 2013
- 232
-
Mobility spectrum analysis of carrier transport at insulator/semiconductor interfacesUmana-Membreno, G.A. / Antoszewski, J. / Faraone, L. et al. | 2013
- 236
-
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidationPampillón, María Ángela / Feijoo, Pedro Carlos / San Andrés, Enrique et al. | 2013
- 240
-
Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ =2.0–2.5)Stesmans, A. / Nguyen, A.P.D. / Houssa, M. / Afanas’ev, V.V. / Tőkei, Zs. / Baklanov, M.R. et al. | 2013
- 244
-
Defects at Ge:GeO2 and Ge:MeOx interfacesLi, H. / Robertson, J. et al. | 2013
- 250
-
Superior reliability of high mobility (Si)Ge channel pMOSFETsFranco, J. / Kaczer, B. / Toledano-Luque, M. / Roussel, Ph.J. / Cho, M. / Kauerauf, T. / Mitard, J. / Eneman, G. / Witters, L. / Grasser, T. et al. | 2013
- 257
-
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stressMeneghesso, G. / Meneghini, M. / Stocco, A. / Bisi, D. / de Santi, C. / Rossetto, I. / Zanandrea, A. / Rampazzo, F. / Zanoni, E. et al. | 2013
- 262
-
Construction of atomic-scale logic gates on a surface of hydrogen passivated germaniumKolmer, Marek / Godlewski, Szymon / Lis, Jakub / Such, Bartosz / Kantorovich, Lev / Szymonski, Marek et al. | 2013
- 266
-
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scalingHan, J.-H. / Zhang, R. / Osada, T. / Hata, M. / Takenaka, M. / Takagi, S. et al. | 2013
- 270
-
Transformation of a metal–insulator-silicon structure into a resonant-tunneling diodeKareva, G.G. / Vexler, M.I. / Illarionov, Yu.Yu. et al. | 2013
- 274
-
Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfacesGuo, Yuzheng / Robertson, John et al. | 2013
- 278
-
Analysis of metal insulator transitions in VO2 and V2O3 for RRAMsGuo, Yuzheng / Robertson, John et al. | 2013
- 282
-
Understanding Ge impact on VT and VFB in Si1− xGex/Si pMOSFETsSoussou, A. / Leroux, C. / Rideau, D. / Toffoli, A. / Romano, G. / Saxod, O. / Bidal, G. / Barge, D. / Pellissier-Tanon, D. / Abbate, F. et al. | 2013
- 286
-
Ab initio validation of continuum models parametrizations for ultrascaled SOI interfacesBiel, Blanca / Donetti, Luca / Godoy, Andres / Gámiz, Francisco et al. | 2013
- 290
-
Epitaxial ferroelectric oxides on semiconductors- A route towards negative capacitance devicesDroopad, R. / Contreras-Guerrero, R. / Veazey, J.P. / Qiao, Q. / Klie, R.F. / Levy, J. et al. | 2013
- 294
-
Point defects in thermal GaAs/GaAs-oxide structures probed by electron paramagnetic resonanceNguyen, S. / Stesmans, A. / Afanas’ev, V.V. et al. | 2013
- 298
-
Stress induced leakage current generated by hot-hole injectionTeramoto, Akinobu / Park, Hyeonwoo / Inatsuka, Takuya / Kuroda, Rihito / Sugawa, Shigetoshi / Ohmi, Tadahiro et al. | 2013
- 302
-
The intrinsic parameter fluctuation on high-κ/metal gate bulk FinFET devicesLi, Yiming / Su, Hsin-Wen / Chen, Yu-Yu / Hsu, Sheng-Chia / Huang, Wen-Tsung et al. | 2013
- 306
-
Gate-last integration on planar FDSOI for low-V Tp and low-EOT MOSFETsMorvan, S. / Andrieu, F. / Leroux, C. / Garros, X. / Cassé, M. / Martin, F. / Gassilloud, R. / Morand, Y. / Le Royer, C. / Besson, P. et al. | 2013
- 310
-
A computational study of Si–H bonds as precursors for neutral centres in amorphous silica and at the Si/SiO2 interfaceLing, Sanliang / El-Sayed, Al-Moatasem / Lopez-Gejo, Francisco / Watkins, Matthew B. / Afanas’ev, V.V. / Shluger, Alexander L. et al. | 2013
- 310
-
A computational study of Si–H bonds as precursors for neutral Formula Not Shown centres in amorphous silica and at the Si/SiO2 interfaceLing, S. / El-Sayed, A. M. / Lopez-Gejo, F. / Watkins, M. B. / Afanas’ev, V. V. / Shluger, A. L. et al. | 2013
- 310
-
A computational study of Si–H bonds as precursors for neutral centres in amorphous silica and at the Si/SiO2 interfaceLing, Sanliang et al. | 2013
- 314
-
Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging componentsToledano-Luque, M. / Kaczer, B. / Aoulaiche, M. / Spessot, A. / Roussel, Ph.J. / Ritzenthaler, R. / Schram, T. / Thean, A. / Groeseneken, G. et al. | 2013
- 318
-
The unexpected effects of crystallization on Ta2O5 as studied by HRTEM and C-AFMCelano, Umberto / Chintala, Ravi Chandra / Adelmann, Christoph / Richard, Olivier / Vandervorst, Wilfried et al. | 2013
- 322
-
Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdownMiranda, E. / Kawanago, T. / Kakushima, K. / Suñé, J. / Iwai, H. et al. | 2013
- 326
-
Electron mobility in heavily doped junctionless nanowire SOI MOSFETsRudenko, T. / Nazarov, A. / Yu, R. / Barraud, S. / Cherkaoui, K. / Razavi, P. / Fagas, G. et al. | 2013
- 330
-
FinFETs with ONO BOX for multi-bit unified memoryChang, Sung-Jae / Bawedin, Maryline / Xiong, Wade / Lee, Jong-Hyun / Lee, Jung-Hee / Cristoloveanu, Sorin et al. | 2013
- 334
-
Sheet resistance measurement on AlGaN/GaN wafers and dispersion studyLehmann, J. / Leroux, C. / Charles, M. / Torres, A. / Morvan, E. / Blachier, D. / Ghibaudo, G. / Bano, E. / Reimbold, G. et al. | 2013
- 338
-
Modeling, simulation and design of the vertical Graphene Base TransistorDriussi, F. / Palestri, P. / Selmi, L. et al. | 2013
- 342
-
Multilevel resistive switching in ternary HfxAl1− xOy oxide with graded Al depth profileMarkeev, A. / Chouprik, A. / Egorov, K. / Lebedinskii, Yu. / Zenkevich, A. / Orlov, O. et al. | 2013
- 346
-
The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devicesBradley, Samuel R. / McKenna, Keith P. / Shluger, Alexander L. et al. | 2013
- 351
-
The race of phase change memories to nanoscale storage and applicationsLacaita, Andrea L. / Redaelli, Andrea et al. | 2013
- 357
-
Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devicesChen, Chien-Hung / Li, Yiming / Chen, Chieh-Yang / Chen, Yu-Yu / Hsu, Sheng-Chia / Huang, Wen-Tsung / Chu, Sheng-Yuan et al. | 2013
- 360
-
Selector-less RRAM with non-linearity of device for cross-point array applicationsWoo, Jiyong / Lee, Daeseok / Choi, Godeuni / Cha, Euijun / Kim, Seonghyun / Lee, Wootae / Park, Sangsu / Hwang, Hyunsang et al. | 2013
- 364
-
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectricsShubhakar, Kalya / Pey, Kin Leong / Raghavan, Nagarajan / Kushvaha, Sunil Singh / Bosman, Michel / Wang, Zhongrui / O’Shea, Sean Joseph et al. | 2013
- 370
-
First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substratesLucovsky, G. / Kim, J.W. / Nordlund, D. et al. | 2013
- 374
-
Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiOx-based metal–insulator-metal devicesLin, Chia-Chun / Wu, Yung-Hsien / Hung, Tung-Hsuan / Hou, Chin-Yao et al. | 2013
- 378
-
AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALDMeunier, R. / Torres, A. / Morvan, E. / Charles, M. / Gaud, P. / Morancho, F. et al. | 2013
- 381
-
Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectricsLehmann, J. / Hübner, R. / Borany, J.V. / Skorupa, W. / Mikolajick, T. / Schäfer, A. / Schubert, J. / Mantl, S. et al. | 2013
- 385
-
Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAMLee, Daeseok / Woo, Jiyong / Cha, Euijun / Kim, Seonghyun / Lee, Wootae / Park, Sangsu / Hwang, Hyunsang et al. | 2013
- 389
-
Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device propertiesTakagi, Shinichi / Zhang, Rui / Takenaka, Mitsuru et al. | 2013
- 396
-
Author Index| 2013
- IFC
-
Inside Front Cover - Editorial Board| 2013
- v
-
Table of Contents| 2013
- xi
-
Preface| 2013