Effects of Diode Voltage and Thermal Resistance on the Performance of Multichip LED Modules (English)
- New search for: Wang, C.
- New search for: Wang, C.
In:
IEEE TRANSACTIONS ON ELECTRON DEVICES
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63
, 1
;
390-393
;
2016
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ISSN:
- Article (Journal) / Print
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Title:Effects of Diode Voltage and Thermal Resistance on the Performance of Multichip LED Modules
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Contributors:Wang, C. ( author )
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Published in:IEEE TRANSACTIONS ON ELECTRON DEVICES ; 63, 1 ; 390-393
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2016-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3 / 621
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Table of contents – Volume 63, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Table of contents| 2016
- 5
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Introduction to the Special Issue on Solid-State SensorsTheuwissen, Albert J. P et al. | 2016
- 10
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Effect and Limitation of Pinned PhotodiodeTeranishi, Nobukazu et al. | 2016
- 16
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A Review of CMOS Photodiode Modeling and the Role of the Lateral PhotoresponseBlanco-Filgueira, Beatriz et al. | 2016
- 26
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Interpreting Activation Energies in Digital Image SensorsDunlap, Justin C et al. | 2016
- 32
-
A Charge Transfer Model for CMOS Image SensorsHan, Liqiang et al. | 2016
- 42
-
A Potential-Based Characterization of the Transfer Gate in CMOS Image SensorsXu, Yang et al. | 2016
- 49
-
Device Simulations for Ultrahigh-Speed and High-Voltage Image SensorsMutoh, Hideki et al. | 2016
- 57
-
Nonuniformity Analysis of a 65-kpixel CMOS SPAD ImagerAntolovic, Ivan Michel et al. | 2016
- 65
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A Low Dark Count p-i-n Diode Based SPAD in CMOS TechnologyVeerappan, Chockalingam et al. | 2016
- 72
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Temporal Readout Noise Analysis and Reduction Techniques for Low-Light CMOS Image SensorsBoukhayma, Assim et al. | 2016
- 79
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TiO2-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis TechniqueLiu, Han-Yin et al. | 2016
- 86
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High-Sensitivity Image Sensors Overlaid With Thin-Film Gallium Oxide/Crystalline Selenium Heterojunction PhotodiodesImura, Shigeyuki et al. | 2016
- 92
-
CMOS-Compatible PureGaB Ge-on-Si APD Pixel ArraysSammak, Amir et al. | 2016
- 100
-
A 2.5 pJ/b Binary Image Sensor as a Pathfinder for Quanta Image SensorsMasoodian, Saleh et al. | 2016
- 106
-
CMOS Global Shutter Charge Storage Pixels With Improved PerformanceVelichko, Sergey et al. | 2016
- 113
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Design and Characterization of Enhanced Angle Sensitive PixelsSivaramakrishnan, Sriram et al. | 2016
- 120
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Enhanced Near-Infrared Response CMOS Image Sensors Using High-Resistivity Substrate: Photodiodes Design Impact on PerformancesLincelles, Jean-Baptiste et al. | 2016
- 128
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3-D-Stacked 16-Mpixel Global Shutter CMOS Image Sensor Using Reliable In-Pixel Four Million Microbump Interconnections With 7.6- $\mu \text{m}$ PitchKondo, Toru et al. | 2016
- 138
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A Fast-Gated CMOS Image Sensor With a Vertical Overflow Drain Shutter MechanismTadmor, Erez et al. | 2016
- 145
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Linear-Mode Gain-Modulated Avalanche Photodiode Image Sensor for Time-of-Flight Optical RangingShcherbakova, Olga et al. | 2016
- 153
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A 1.7-in, 33-Mpixel, 120-frames/s CMOS Image Sensor With Depletion-Mode MOS Capacitor-Based 14-b Two-Stage Cyclic A/D ConvertersYasue, Toshio et al. | 2016
- 162
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A Column-Parallel Inverter-Based Cyclic ADC for CMOS Image Sensor With Capacitance and Clock ScalingTang, Fang et al. | 2016
- 168
-
A Low-Noise and Area-Efficient PWM- \Delta \Sigma ADC Using a Single-Slope Quantizer for CMOS Image SensorsJo, Yun-Rae et al. | 2016
- 168
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A Low-Noise and Area-Efficient PWM-[Formula Omitted] ADC Using a Single-Slope Quantizer for CMOS Image SensorsYun-Rae Jo et al. | 2016
- 174
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A 47 Million Pixel High-Performance Interline CCD Image SensorWang, Shen et al. | 2016
- 182
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A Submillimeter Range Resolution Time-of-Flight Range Imager With Column-Wise Skew CalibrationYasutomi, Keita et al. | 2016
- 189
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A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta ImagingDutton, Neale A. W et al. | 2016
- 197
-
X-Ray Detector-on-Plastic With High Sensitivity Using Low Cost, Solution-Processed Organic PhotodiodesGelinck, Gerwin H et al. | 2016
- 205
-
Fully 3-D Integrated Pixel Detectors for X-RaysDeptuch, Grzegorz W et al. | 2016
- 215
-
An Implantable CMOS Image Sensor With Self-Reset Pixels for Functional Brain ImagingSasagawa, Kiyotaka et al. | 2016
- 223
-
III-V Nanowire Transistors for Low-Power Logic Applications: A Review and OutlookZhang, Chen et al. | 2016
- 235
-
Recent Developments and Design Challenges of High-Performance Ring Oscillator CMOS Time-to-Digital ConvertersCheng, Zeng et al. | 2016
- 252
-
Assessment of Rear-Surface Processing Strategies for III-V on Si Multijunction Solar Cells Based on Numerical SimulationsMartin-Martin, Diego et al. | 2016
- 259
-
Gate Engineering to Improve Effective Resistance of 28-nm High- k Metal Gate CMOS DevicesJeong, JinHyuk et al. | 2016
- 265
-
Diffusion and Gate Replacement: A New Gate-First High- k /Metal Gate CMOS Integration Scheme Suppressing Gate Height AsymmetryRitzenthaler, Romain et al. | 2016
- 272
-
Bond-Pad Charging Protection Design for Charging-Free Reference Transistor Test StructuresLin, Wallace et al. | 2016
- 280
-
A Thermal-Aware Device Design Considerations for Nanoscale SOI and Bulk FinFETsKumar, Ulayil Sajesh et al. | 2016
- 288
-
Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian DopingAhish, Shylendra et al. | 2016
- 296
-
Physical Basis for CMOS SCR Compact ModelsMertens, Robert et al. | 2016
- 303
-
Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FETWang, Hongjuan et al. | 2016
- 311
-
Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling TransistorsLiu, Fei et al. | 2016
- 318
-
Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility TransistorsJoglekar, Sameer et al. | 2016
- 326
-
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped BufferAxelsson, Olle et al. | 2016
- 333
-
Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth ProcessBergsten, Johan et al. | 2016
- 339
-
Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III-V-on-Insulator nMOSFETsShen, Hsin-Hung et al. | 2016
- 345
-
Comparison of the AlxGa1-xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon SubstratesDolmanan, Surani Bin et al. | 2016
- 353
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Room Temperature Direct and Heterodyne Detection of 0.28-0.69-THz Waves Based on GaN 2-DEG Unipolar NanochannelsDaher, Carlos et al. | 2016
- 360
-
HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio CalculationsPerniola, Luca et al. | 2016
- 369
-
Effects of Localized Back-Surface Defects on Bulk and Front-Channel Conduction of Amorphous InGaZnO TFTsHsu, Chih-Chieh et al. | 2016
- 377
-
Near-Infrared Detection Using Pulsed Tunneling Junction in Silicon DevicesKim, HuiJung et al. | 2016
- 384
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Characterization of Ambient Light-Induced Inversion Current in MOS(n) Tunneling Diode With Enhanced Oxide Thickness-Dependent PerformanceLin, Yen-Kai et al. | 2016
- 390
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Effects of Diode Voltage and Thermal Resistance on the Performance of Multichip LED ModulesWang, Chien-Ping et al. | 2016
- 394
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Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power ConsumptionKim, Kyeong-Ah et al. | 2016
- 402
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A Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive Intermediate Electrode for Roll-to-Roll ManufacturingTsujimura, Takatoshi et al. | 2016
- 408
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Estimation of Optical Power and Heat-Dissipation Factor of Low-Power SMD LED as a Function of Injection Current and Ambient TemperatureRaypah, Muna E et al. | 2016
- 414
-
4H-SiC p-i-n diode as Highly Linear Temperature SensorRao, Sandro et al. | 2016
- 419
-
Vertical GaN Power Diodes With a Bilayer Edge TerminationDickerson, Jeramy R et al. | 2016
- 426
-
Upscaling of the Inkjet Printing Process for the Manufacturing of Passive Electronic DevicesSternkiker, Christoph et al. | 2016
- 432
-
Thermal Conductivity and Interface Thermal Conductance of Titanium Silicide Films on SiJagannadham, Kasichainula et al. | 2016
- 439
-
High-Performance On-Chip Low-Pass Filters Using CPW and Slow-Wave-CPW Transmission Lines on Porous SiliconSarafis, Panagiotis et al. | 2016
- 446
-
High-Performance Depletion-Mode Multiple-Strip ZnO-Based Fin Field-Effect TransistorsLee, Ching-Ting et al. | 2016
- 452
-
Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive MaterialSun, Lei et al. | 2016
- 459
-
A Current-Induced Channel Organic Thin-Film TransistorGangwar, A et al. | 2016
- 465
-
Adhesion Limits and Design Criteria for NanorelaysLin, Kevin L et al. | 2016
- 471
-
Properties of Hf-Doped Bi1.5Zn0.92Nb1.5O6.92 Ceramic VaricapsKhusayfan, Najla M et al. | 2016
- 476
-
Carbon Nanotube Thin Films Functionalized via Loading of Au Nanoclusters for Flexible Gas Sensors DevicesLin, Zheng-Dong et al. | 2016
- 481
-
Design and Development of a Novel, Compact, and Light-Weight Multistage Depressed Collector for Space TWTsLatha, A. Mercy et al. | 2016
- 486
-
A TE13 Mode Converter for High-Order Mode Gyrotron-Traveling-Wave TubesLuo, Yong et al. | 2016
- 491
-
A Wideband Electron-Optical System of a Subterahertz Large-Orbit GyrotronKalynov, Yuriy K et al. | 2016
- 497
-
Design Study of a Fundamental Mode Input Coupler for a 372-GHz Gyro-TWA I: Rectangular-to-Circular Coupling MethodsGarner, Jason R et al. | 2016
- 504
-
Ultrawideband Coalesced-Mode Operation for a Sheet-Beam Traveling-Wave TubeWang, Jianxun et al. | 2016
- 512
-
Simulation and Experiments of a $W$ -Band Extended Interaction Oscillator Based on a Pseudospark-Sourced Electron BeamYin, Yong et al. | 2016
- 512
-
Simulation and Experiments of a [Formula Omitted]-Band Extended Interaction Oscillator Based on a Pseudospark-Sourced Electron BeamYong Yin et al. | 2016
- 517
-
Monte Carlo Investigation of High-Field Electron Transport Characteristics in ZnMgO/ZnO HeterostructuresWang, Ping et al. | 2016
- 524
-
Toward Ultimate Scaling of MOSFETMuralidhar, Ramachandran et al. | 2016
- 527
-
Errata to "Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors"Trevisoli, Renan et al. | 2016
- 528
-
Introducing IEEE Collabratec| 2016
- 531
-
Area-efficient and low-leakage diode string for on-chip ESD protectionChun-Yu Lin et al. | 2016
- 537
-
Quantum transport analysis of conductance variability in graphene nanoribbons with edge defectsPoljak, M et al. | 2016
- 544
-
First principles calculations of bonding and charges at the interface in a c-Si/Si structure applicable for the surface passivation of silicon-based solar cellsBansal, A et al. | 2016
- 551
-
Channel Profile Design of textE DC MOSFET for High Intrinsic Gain and Low MismatchSengupta, S et al. | 2016
- 558
-
Impact of postdeposition annealing ambient on the mobility of Ge nMOSFETs with 1-nm EOT /Ge gate-stacksRui Zhang et al. | 2016
- 565
-
Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behaviorAamir Ahsan, S et al. | 2016
- 573
-
Dual-gate Mo FET with a coplanar-gate engineeringJie Jiang et al. | 2016
- 584
-
RF characterization of vertical wrap-gated InAs/high- K nanowire capacitorsJun Wu et al. | 2016
- 590
-
Measurement of temperature in GaN HEMTs by gate end-to-end resistancePaine, B.M et al. | 2016
- 606
-
The III-nitride double heterostructure revisited: benefits for threshold voltage engineering of MIS devicesHahn, H et al. | 2016
- 614
-
Normally OFF GaN-on-Si MIS-HEMTs fabricated with LPCVD-SiNx passivation and high-temperature gate recessYijun Shi et al. | 2016
- 620
-
Bonding pad over active structure for chip shrinkage of high-power AlGaN/GaN HFETsSeung Kyu Oh et al. | 2016
- 625
-
Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applicationsChang-Hung Yu et al. | 2016
- 643
-
A comprehensive benchmark and optimization of 5-nm lateral and vertical GAA 6T-SRAMsTrong Huynh-Bao et al. | 2016
- 652
-
Compact modeling of magnetic tunneling junctionsRoy, A.S et al. | 2016
- 659
-
Accurate lifetime estimation of sub-20-nm NAND flash memoryKyunghwan Lee et al. | 2016
- 668
-
Improved short-channel characteristics with long data retention time in extreme short-channel flash memory devicesGupta, D et al. | 2016
- 675
-
A compact model for single-poly multitime programmable memory cellsCong Li et al. | 2016
- 684
-
Noise margin modeling for zero- load TFT circuits and yield estimationQinghang Zhao et al. | 2016
- 691
-
Optical performance enhancement of quantum dot-based light-emitting diodes through an optimized remote structureXiang Lei et al. | 2016
- 704
-
Characterization of Lag Signal in Amorphous Selenium DetectorsAbbaszadeh, S et al. | 2016
- 710
-
Electron beam curing technology for very high-throughput manufacturing of flexible alternating current powder electroluminescent devicesSico, G et al. | 2016
- 717
-
Simulation of Alumina Nanopores as High Spatial Resolution Electron MultipliersTaheri, A et al. | 2016
- 723
-
Reliability of Au-Free AlGaN/GaN-on-silicon schottky barrier diodes under ON-state stressTallarico, A.N et al. | 2016
- 731
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Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD as gate dielectric and passivation layerZhili Zhang et al. | 2016
- 739
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Low-capacitance through-silicon-vias with combined air/Si linersCui Huang et al. | 2016
- 746
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Direct Al-imprinting method for increased effective electrode area in MIM capacitorsHourdakis, E et al. | 2016
- 751
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Thermal stability improvement induced by laser annealing for 50-A Ni film silicidationJian-Chi Zhang et al. | 2016
- 755
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A realistic method for time-dependent dielectric breakdown reliability analysis for advanced technology nodeKong Boon Yeap et al. | 2016
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Analytical modeling of AC resistance in thick coil integrated spiral inductorsXiangming Fang et al. | 2016
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Optical-phonon-limited high-field transport in layered materialsChandrasekar, H et al. | 2016
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Ultimate performance projection of ultrathin body transistor based on group IV, III-V, and 2-D-materialsKain Lu Low et al. | 2016
- 781
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Parasitic capacitance analytical model for sub-7-nm multigate devicesLacord, J et al. | 2016
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Organic single-crystal nanowire transistor fabricated by glass fiber mask methodLiangliang Deng et al. | 2016
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Fully additive low-cost printed electronics with very low process variationsJia Zhou et al. | 2016
- 809
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Lateral MEMS-type field emission electron sourceGrzebyk, T et al. | 2016
- 814
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Design and microwave measurement of a broadband compact power coupler for sheet beam traveling wave tubesJianxun Wang et al. | 2016
- 819
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A 3-D large-signal model of folded-waveguide TWTsWei-Zhong Yan et al. | 2016
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High-performance single-walled carbon nanotube-based thin-film transistors by reducing charge transferJun-Young Jeon et al. | 2016
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Organic Microelectromechanical Relays for Ultralow-Power Flexible Transparent Large-Area ElectronicsYanbiao Pan et al. | 2016
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A continuous semianalytic current model for DG and NW TFETsJianzhi Wu et al. | 2016
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Analytical model for the dynamic behavior of triple-gate junctionless nanowire transistorsTrevisoli, R et al. | 2016
- 864
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Performance improvement of Poly-Si tunnel FETs by trap density reductionMa, W.C.-Y et al. | 2016
- 869
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Examination of two-band E relations for band-to-band tunnelingTaur, Y et al. | 2016
- 873
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ReRAM crossbar array: reduction of access time by reducing the parasitic capacitance of the selector deviceHyein Lim et al. | 2016
- 877
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Dimensionality dependence of TFET performance down to 0.1 V supply voltageYuan Taur et al. | 2016
- 881
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Determination of surface donor states properties and modeling of InAlN/AlN/GaN heterostructuresGoyal, N et al. | 2016
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Front cover| 2016
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IEEE Transactions on Electron Devices publication information| 2016
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IEEE Transactions on Electron Devices information for authors| 2016
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Blank page| 2016
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Spin-torque sensors for energy efficient high-speed long interconnectsAl Azim, Z et al. | 2016