Method for evaluation of transient-fault detection techniques (English)
- New search for: Camponogara Viera, R.A.
- New search for: Bastos, R. Possamai
- New search for: Dutertre, J.-M.
- New search for: Maurine, P.
- New search for: Jadue, R. Iga
- New search for: Camponogara Viera, R.A.
- New search for: Bastos, R. Possamai
- New search for: Dutertre, J.-M.
- New search for: Maurine, P.
- New search for: Jadue, R. Iga
In:
Microelectronics and reliability
;
76
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68-74
;
2017
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ISSN:
- Article (Journal) / Print
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Title:Method for evaluation of transient-fault detection techniques
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Contributors:Camponogara Viera, R.A. ( author ) / Bastos, R. Possamai ( author ) / Dutertre, J.-M. ( author ) / Maurine, P. ( author ) / Jadue, R. Iga ( author )
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Published in:Microelectronics and reliability ; 76 ; 68-74
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Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
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Publication date:2017-01-01
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Size:7 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3815
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3815 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 76
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysisLabat, Nathalie / Marc, François / Frémont, Hélène / Bafleur, Marise et al. | 2017
- 6
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Simulation of packaging under harsh environment conditions (temperature, pressure, corrosion and radiation)Weide-Zaage, Kirsten et al. | 2017
- 13
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Enabling robust automotive electronic components in advanced CMOS nodesHuard, V. / Mhira, S. / Cacho, F. / Bravaix, A. et al. | 2017
- 25
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Reliability-oriented environmental thermal stress analysis of fuses in power electronicsBahman, A.S. / Iannuzzo, F. / Holmgaard, T. / Nielsen, R.Ø. / Blaabjerg, F. et al. | 2017
- 31
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Reliability assessment platform for the power semiconductor devices – Study case on 3-phase grid-connected inverter applicationVernica, Ionuț / Ma, Ke / Blaabjerg, Frede et al. | 2017
- 38
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Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliabilityHirler, A. / Biba, J. / Alsioufy, A. / Lehndorff, T. / Sulima, T. / Lochner, H. / Abelein, U. / Hansch, W. et al. | 2017
- 42
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Improved and accurate physics-of-failure (PoF) methodology for qualification and lifetime assessment of electronic systemsTemsamani, A.B. / Kauffmann, S. / Descas, Y. / Vandevelde, B. / Zanon, F. / Willems, G. et al. | 2017
- 47
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Analysis of errors in estimating wearout characteristics of time-dependent dielectric breakdown using system-level accelerated life testKim, Dae-Hyun / Milor, Linda et al. | 2017
- 53
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Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65nm and 40nm SRAMsMoindjie, S. / Autran, J.L. / Munteanu, D. / Gasiot, G. / Roche, P. et al. | 2017
- 58
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A new approach for Total Ionizing Dose effect analysis on Flash-based FPGAZhang, Qiutao / Azimi, Sarah / La Vaccara, Germano / Sterpone, Luca / Du, Boyang et al. | 2017
- 64
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A row hammer pattern analysis of DDR2 SDRAMVersen, M. / Ernst, W. / Gulati, P. et al. | 2017
- 68
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Method for evaluation of transient-fault detection techniquesCamponogara Viera, R.A. / Bastos, R. Possamai / Dutertre, J.-M. / Maurine, P. / Jadue, R. Iga et al. | 2017
- 75
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Study of the impact of electromigration on integrated circuit performance and reliability at design levelNunes, R.O. / de Orio, R.L. et al. | 2017
- 81
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Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuitsYang, Kexin / Liu, Taizhi / Zhang, Rui / Kim, Dae-Hyun / Milor, Linda et al. | 2017
- 87
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Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurationsZhang, Rui / Liu, Taizhi / Yang, Kexin / Milor, Linda et al. | 2017
- 92
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Characterization of Low Drop-Out during ageing and design for yieldLajmi, R. / Cacho, F. / Lauga Larroze, E. / Bourdel, S. / Benech, P. / Huard, V. / Federspiel, X. et al. | 2017
- 97
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Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP)Helmut, D. / Wachutka, G. / Groos, G. et al. | 2017
- 102
-
A very unusual transistor failure, caused by a solenoidJacob, P. / Furrer, R. et al. | 2017
- 106
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Uncertainty quantification in nanowire growth modeling – A precursor to quality semiconductor nanomanufacturingOssai, Chinedu I. / Xu, Xuechu / Yang, Qing / Raghavan, Nagarajan et al. | 2017
- 112
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Lifetime and failure analysis of perovskite-based ceramic NTC thermistors by thermal cycling and abrasion combined stressJeong, Jae-Seong / Lee, Won-kyoung / Lee, Chung-kuk / Choi, Joongho et al. | 2017
- 117
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Converter-level FEM simulation for lifetime prediction of an LED driver with improved thermal modellingNiu, H. / Wang, H. / Ye, X. / Wang, S. / Blaabjerg, F. et al. | 2017
- 123
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Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform designLuo, Haoze / Li, Wuhua / He, Xiangning / Iannuzzo, Francesco / Blaabjerg, Frede et al. | 2017
- 131
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LER and spacing variability on BEOL TDDB using E-field mapping: Impact of field accelerationKocaay, D. / Roussel, Ph.J. / Croes, K. / Ciofi, I. / Saad, Y. / De Wolf, I. et al. | 2017
- 136
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Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETsde Jong, Maurits J. / Salm, Cora / Schmitz, Jurriaan et al. | 2017
- 141
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Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield patternChen, C.Q. / Ang, G.B. / Ng, P.T. / Rivai, Francis / Neo, S.P. / Nagalingam, D. / Yip, K.H. / Lam, Jeffery / Mai, Z.H. et al. | 2017
- 145
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Carbon-related defects in microelectronicsKolkovsky, Vl. / Stübner, R. / Weber, J. et al. | 2017
- 149
-
Static and dynamic hot carrier accelerated TDDB: Influencing factors and impact on product lifetimeDuschl, Rainer / Fischer, Armin H. / Gratz, Achim / Wiesner, Robert et al. | 2017
- 154
-
A probe-based SEU detection method for SRAM-based FPGAsSterpone, Luca / Boragno, Luca et al. | 2017
- 159
-
Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologiesRousselin, T. / Hubert, G. / Régis, D. / Gatti, M. / Bensoussan, A. et al. | 2017
- 164
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The improvement of HEIP immunity using STI engineering at DRAMHan, Seunguk / Lee, Youngyoun / Kim, Yongdoo / Park, Jemin / Lim, Junhee / Yamada, Satoru / Hong, Hyeongsun / Lee, Kyupil / Jin, Gyoyoung / Jung, Eunseung et al. | 2017
- 168
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Analysis of ageing effects on ARTIX7 XILINX FPGASlimani, M. / Benkalaia, K. / Naviner, L. et al. | 2017
- 174
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Modelling of initial fast charge loss mechanism for logic embedded non-volatile memoriesWu, J. / Li, C. / Wang, H. / Li, J. / Zheng, L. et al. | 2017
- 178
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Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysisRodriguez-Fernandez, A. / Cagli, C. / Perniola, L. / Suñé, J. / Miranda, E. et al. | 2017
- 184
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Technologies for Heterogeneous Integration - Challenges and chances for fault isolationBoit, C. et al. | 2017
- 188
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Lock-in thermal laser stimulation for non-destructive failure localization in 3-D devicesJacobs, K.J.P. / Wang, T. / Stucchi, M. / Gonzalez, M. / Croes, K. / De Wolf, I. / Beyne, E. et al. | 2017
- 194
-
Circuit simulation assisting Physical Fault Isolation for effective root cause analysisBoostandoost, M. / Gräfje, D. / Pop, F. et al. | 2017
- 201
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Effective scan chain failure analysis methodAuvray, Etienne / Armagnat, Paul / Saury, Luc / Jothi, Maheshwaran / Brügel, Michael et al. | 2017
- 214
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Practical quantitative scanning microwave impedance microscopyAmster, Oskar / Stanke, Fred / Friedman, Stuart / Yang, Yongliang / Dixon-Warren, St.J. / Drevniok, B. et al. | 2017
- 218
-
Determination of doping type by calibrated capacitance scanning microwave microscopyHommel, S. / Killat, N. / Altes, A. / Schweinboeck, T. / Kreupl, F. et al. | 2017
- 222
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From diffusive in-plane to ballistic out-of-plane heat transport in thin non-crystalline filmsHeiderhoff, R. / Haeger, T. / Dawada, K. / Riedl, T. et al. | 2017
- 227
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Simulation of the thermal stress induced by CW 1340nm laser on 28nm advanced technologiesPenzes, M. / Dudit, S. / Monsieur, F. / Silvestri, L. / Nallet, F. / Lewis, D. / Perdu, P. et al. | 2017
- 233
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Optical interaction in active analog circuit elementsVogt, I. / Nakamura, T. / Boit, C. et al. | 2017
- 238
-
Study of GHz-SAM sensitivity to delamination in BEOL layersKhaled, A. / Ključar, L. / Brand, S. / Kögel, M. / Aertgeerts, R. / Nicasy, R. / De Wolf, I. et al. | 2017
- 243
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Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signaturesMoultif, N. / Joubert, E. / Masmoudi, M. / Latry, O. et al. | 2017
- 249
-
Pattern image enhancement by automatic focus correctionBoscaro, A. / Jacquir, S. / Sanchez, K. / Perdu, P. / Binczak, S. et al. | 2017
- 255
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Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effectNeo, S.P. / Quah, A.C.T. / Ang, G.B. / Nagalingam, D. / Ma, H.H. / Ting, S.L. / Soo, C.W. / Chen, C.Q. / Mai, Z.H. / Lam, J.C. et al. | 2017
- 261
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Embed SRAM IDDOFF fail root cause identification by combination of device analysis and localized circuit analysisChen, C.Q. / Ang, G.B. / Ng, P.T. / Rivai, Francis / Ng, H.P. / Quah, A.C.T. / Teo, Angela / Lam, Jeffery / Mai, Z.H. et al. | 2017
- 267
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Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETsKakarla, Bhagyalakshmi / Nida, Selamnesh / Mueting, Johanna / Ziemann, Thomas / Kovacevic-Badstuebner, Ivana / Grossner, Ulrike et al. | 2017
- 272
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A survey of SiC power MOSFETs short-circuit robustness and failure mode analysisCeccarelli, L. / Reigosa, P.D. / Iannuzzo, F. / Blaabjerg, F. et al. | 2017
- 277
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Thermal design and characterization of a modular integrated liquid cooled 1200V-35A SiC MOSFET bi-directional switchCova, P. / Aliyu, A.M. / Castellazzi, A. / Chiozzi, D. / Delmonte, N. / Lasserre, P. / Pignoloni, N. et al. | 2017
- 282
-
Field and hot electron-induced degradation in GaN-based power MIS-HEMTsTajalli, Alaleh / Meneghini, Matteo / Rossetto, Isabella / Moens, Peter / Banerjee, Abhishek / Zanoni, Enrico / Meneghesso, Gaudenzio et al. | 2017
- 287
-
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivationSasangka, W.A. / Syaranamual, G.J. / Gao, Y. / I Made, R. / Gan, C.L. / Thompson, C.V. et al. | 2017
- 292
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Reliability of 100nm AlGaN/GaN HEMTs for mm-wave applicationsDammann, M. / Baeumler, M. / Polyakov, V. / Brückner, P. / Konstanzer, H. / Quay, R. / Mikulla, M. / Graff, A. / Simon-Najasek, M. et al. | 2017
- 298
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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping levelRossetto, I. / Meneghini, M. / Canato, E. / Barbato, M. / Stoffels, S. / Posthuma, N. / Decoutere, S. / Tallarico, A.N. / Meneghesso, G. / Zanoni, E. et al. | 2017
- 304
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Exploring the thermal limit of GaN power devices under extreme overload conditionsPribahsnik, F.P. / Nelhiebel, M. / Mataln, M. / Bernardoni, M. / Prechtl, G. / Altmann, F. / Poppitz, D. / Lindemann, A. et al. | 2017
- 309
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Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTsSaito, W. / Naka, T. et al. | 2017
- 314
-
Experimental study of the instabilities observed in 650V enhancement mode GaN HEMT during short circuitAbbate, C. / Busatto, G. / Sanseverino, A. / Tedesco, D. / Velardi, F. et al. | 2017
- 321
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Electrical and thermal failure modes of 600V p-gate GaN HEMTsOeder, Thorsten / Castellazzi, Alberto / Pfost, Martin et al. | 2017
- 327
-
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layerKim, Sang Min / Kang, Min-Soo / Cho, Won-Ju / Park, Jong Tae et al. | 2017
- 333
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Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistorsKim, Hyun Jong / Song, Byung Sang / Cho, Won-Ju / Park, Jong Tae et al. | 2017
- 338
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High resolution physical analysis of ohmic contact formation at GaN-HEMT devicesGraff, A. / Simon-Najasek, M. / Altmann, F. / Kuzmik, J. / Gregušová, D. / Haščík, Š. / Jung, H. / Baur, T. / Grünenpütt, J. / Blanck, H. et al. | 2017
- 344
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Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imagingTartarin, J.G. / Lazar, O. / Saugnon, D. / Lambert, B. / Moreau, C. / Bouexiere, C. / Romain-Latu, E. / Rousseau, K. / David, A. / Roux, J.L. et al. | 2017
- 350
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TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devicesMukherjee, K. / Darracq, F. / Curutchet, A. / Malbert, N. / Labat, N. et al. | 2017
- 357
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Isothermal bending fatigue response of solder joints in high power semiconductor test structuresBetzwar Kotas, A. / Khatibi, G. et al. | 2017
- 362
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High temperature ageing of microelectronics assemblies with SAC solder jointsSabbah, Wissam / Bondue, Pierre / Avino-Salvado, Oriol / Buttay, Cyril / Frémont, Hélène / Guédon-Gracia, Alexandrine / Morel, Hervé et al. | 2017
- 368
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Combined creep characterisation from single lap shear tests and 3D implementation for fatigue simulationsPin, S. / Frémont, H. / Guédon-Gracia, A. et al. | 2017
- 373
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Wire bond degradation under thermo- and pure mechanical loadingPedersen, Kristian Bonderup / Nielsen, Dennis A. / Czerny, Bernhard / Khatibi, Golta / Iannuzzo, Francesco / Popok, Vladimir N. / Pedersen, Kjeld et al. | 2017
- 378
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Strength and reliability of low temperature transient liquid phase bonded CuSnCu interconnectsBrincker, M. / Söhl, S. / Eisele, R. / Popok, V.N. et al. | 2017
- 383
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Protective nanometer films for reliable Cu-Cu connectionsBerthold, Tobias / Benstetter, Guenther / Frammelsberger, Werner / Bogner, Manuel / Rodríguez, Rosana / Nafría, Montserrat et al. | 2017
- 390
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XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connectsRoss, G. / Vuorinen, V. / Krause, M. / Reissaus, S. / Petzold, M. / Paulasto-Kröckel, M. et al. | 2017
- 395
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New ESD challenges in RFID manufacturingJacob, P. / Thiemann, U. et al. | 2017
- 400
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SiC power devices packaging with a short-circuit failure mode capabilityDchar, Ilyas / Buttay, Cyril / Morel, Hervé et al. | 2017
- 405
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Young's modulus of a sintered Cu joint and its influence on thermal stressIshizaki, T. / Miura, D. / Kuno, A. / Hasegawa, K. / Usui, M. / Yamada, Y. et al. | 2017
- 409
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Realistic climatic profiles and their effect on condensation in encapsulated test structures representing power modulesKremp, S. / Schilling, O. et al. | 2017
- 415
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Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modulesLuo, Haoze / Baker, Nick / Iannuzzo, Francesco / Blaabjerg, Frede et al. | 2017
- 420
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Influence of ENIG defects on shear strength of pressureless Ag nanoparticle sintered joint under isothermal agingKim, Min-Su / Nishikawa, Hiroshi et al. | 2017
- 426
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Identification of foreign particles in packages of failed products by application of our modified failure analysis flowOtte, Rik J. / Fonville, Rob F. / Knotter, Martin D. et al. | 2017
- 431
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Innovative conception of SiC MOSFET-Schottky 3D power inverter module with double side cooling and stacking using silver sinteringBarrière, M. / Guédon-Gracia, A. / Woirgard, E. / Bontemps, S. / Le Henaff, F. et al. | 2017
- 438
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Qualification extension of automotive smart power and digital ICs to harsh aerospace mission profiles: Gaps and opportunitiesEnrici Vaion, R. / Medda, M. / Mancaleoni, A. / Mura, G. / Pintus, A. / De Tomasi, M. et al. | 2017
- 444
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Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cyclingSabbah, Wissam / Arabi, Faical / Avino-Salvado, Oriol / Buttay, Cyril / Théolier, Loïc / Morel, Hervé et al. | 2017
- 450
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Laser cuts increase the reliability of heavy-wire bonds and enable on-line process control using thermographyMiddendorf, A. / Grams, A. / Janzen, S. / Lang, K.-D. / Wittler, O. et al. | 2017
- 455
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Highly variable Sn-Cu diffusion soldering process for high performance power electronicsFeil, D. / Herberholz, T. / Guyenot, M. / Nowottnick, M. et al. | 2017
- 460
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Reliability investigation of the copper-zinc system for solid diffusion bonding in power modulesDugal, Franc / Ciappa, Mauro et al. | 2017
- 465
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Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applicationsAbe, S. / Hasegawa, K. / Tsukuda, M. / Wada, K. / Omura, I. / Ninomiya, T. et al. | 2017
- 470
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Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETsOrtiz Gonzalez, J. / Alatise, O. et al. | 2017
- 475
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Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxideTallarico, A.N. / Reggiani, S. / Magnone, P. / Croce, G. / Depetro, R. / Gattari, P. / Sangiorgi, E. / Fiegna, C. et al. | 2017
- 480
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Impact of load pulse duration on power cycling lifetime of chip interconnection solder jointsJunghaenel, M. / Scheuermann, U. et al. | 2017
- 485
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Capacitive effects in IGBTs limiting their reliability under short circuitReigosa, P.D. / Iannuzzo, F. / Rahimo, M. / Blaabjerg, F. et al. | 2017
- 490
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Real-time imaging of temperature distribution inside a power device under a power cycling testWatanabe, A. / Nagao, R. / Omura, I. et al. | 2017
- 495
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Extraction of dynamic avalanche during IGBT turn offGeissmann, Silvan / Michielis, L. De / Corvasce, Ch. / Rahimo, M. / Andenna, M. et al. | 2017
- 500
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Investigation on damaged planar-oxide of 1200V SiC power MOSFETs in non-destructive short-circuit operationBoige, F. / Richardeau, F. / Trémouilles, D. / Lefebvre, S. / Guibaud, G. et al. | 2017
- 507
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Mechanisms of power module source metal degradation during electro-thermal agingRuffilli, R. / Berkani, M. / Dupuy, P. / Lefebvre, S. / Weber, Y. / Legros, M. et al. | 2017
- 512
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Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stressRitter, Matthias / Pfost, Martin et al. | 2017
- 517
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Clamp type built-in current sensor using PCB in high-voltage power modulesTsukuda, M. / Nakashima, K. / Tabata, S. / Hasegawa, K. / Omura, I. et al. | 2017
- 522
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Advanced power cycler with intelligent monitoring strategy of IGBT module under testChoi, U.M. / Blaabjerg, F. / Iannuzzo, F. et al. | 2017
- 527
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Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFETMbarek, S. / Dherbécourt, P. / Latry, O. / Fouquet, F. et al. | 2017
- 532
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Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operationBoige, F. / Richardeau, F. et al. | 2017
- 539
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Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650V discrete GaN-on-Si HEMT power device by accelerated power cycling testSong, S. / Munk-Nielsen, S. / Uhrenfeldt, C. et al. | 2017
- 544
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Power module thermal cycling tester for in-situ ageing detectionPougnet, Ph. / Coquery, G. / Lallemand, R. / Makhloufi, A. et al. | 2017
- 549
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Fundamental-frequency and load-varying thermal cycles effects on lifetime estimation of DFIG power converterZhang, G. / Zhou, D. / Yang, J. / Blaabjerg, F. et al. | 2017
- 556
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Understanding the degradation processes of GaN based LEDs submitted to extremely high current densityRenso, N. / Meneghini, M. / Buffolo, M. / De Santi, C. / Meneghesso, G. / Zanoni, E. et al. | 2017
- 561
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Characterisation of defects generated during constant current InGaN-on-silicon LED operationMade, R.I / Gao, Yu / Syaranamual, G.J. / Sasangka, W.A. / Zhang, L. / Nguyen, Xuan Sang / Tay, Y.Y. / Herrin, J.S. / Thompson, C.V. / Gan, C.L. et al. | 2017
- 566
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Influence of air pollutants on the lifetime of LEDs and analysis of degradation effectsZibold, A. / Dammann, M. / Schmidt, R. / Konstanzer, H. / Kunzer, M. et al. | 2017
- 571
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Failure analysis of projected capacitance touch panel liquid crystal displays – Two case studiesLu, Jia / Cao, Zhennian / Huang, Chuangjun / Xiao, Kunhui / Street, Alan / Dai, Yufeng et al. | 2017
- 575
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Degradation of InGaN-based MQW solar cells under 405nm laser excitationDe Santi, C. / Meneghini, M. / Caria, A. / Dogmus, E. / Zegaoui, M. / Medjdoub, F. / Zanoni, E. / Meneghesso, G. et al. | 2017
- 579
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Practical optical gain by an extended Hakki-Paoli methodVanzi, M. / Marcello, G. / Mura, G. / Le Galès, G. / Joly, S. / Deshayes, Y. / Bechou, L. et al. | 2017