Characterization and metrology for ULSI technology : 2003 international conference, held in Austin, Texas, 24 - 28 March 2003 — [Elektronische Ressource] (English)
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2003
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Title:Characterization and metrology for ULSI technology : 2003 international conference, held in Austin, Texas, 24 - 28 March 2003
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Conference:International Conference on Characterization and Metrology for ULSI Technology ; 2003 ; 2003 ; Austin, Tex.
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Published in:AIP conference proceedings ; 683, CD-ROM
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Edition:[Elektronische Ressource]
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Publisher:
- New search for: American Inst. of Physics
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Place of publication:[Melville, NY]
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Publication date:2003
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Size:1 CD-ROM
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Remarks:12 cm
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Type of media:Conference Proceedings
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Type of material:Storage medium
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Language:English
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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From the Lab to the Fab: Transistors to Integrated CircuitsHuff, H. R. / AIP et al. | 2003
- 40
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Diffused Silicon Transistors and Switches (1954-55): The Beginning of Integrated Circuit TechnologyHolonyak, N. / AIP et al. | 2003
- 63
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Semiconductor Technology and Manufacturing Status, Challenges, and Solutions-A New Paradigm in the MakingHelms, C. R. / AIP et al. | 2003
- 74
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CMOS Devices and Beyond: A Process Integration PerspectiveHutchby, J. A. / Zhirnov, V. / Cavin, R. / Bourianoff, G. / AIP et al. | 2003
- 81
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Metrology Requirements and the Limits of Measurement Technology for the Semiconductor IndustryDiebold, A. C. / AIP et al. | 2003
- 97
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Development of Metrology at NIST for the Semiconductor IndustryKnight, S. / AIP et al. | 2003
- 107
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The "Ultimate" CMOS Device: A 2003 Perspective (Implications for Front-End Characterization and Metrology)Huff, H. R. / Zeitzoff, P. M. / AIP et al. | 2003
- 124
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Optical Metrology for Ultrathin Oxide and High-kappa Gate DielectricsChism, W. W. / Diebold, A. C. / Price, J. / AIP et al. | 2003
- 129
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Critical Metrology for Ultrathin High-kappa DielectricsVandervorst, W. / Brijs, B. / Bender, H. / Conard, T. / Petry, J. / Richard, O. / Blasco, X. / Nafria, M. / AIP et al. | 2003
- 139
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Advanced Characterization of High-kappa Materials Interfaces by High-Resolution Photoemission Using Synchrotron RadiationRenault, O. / Barrett, N. T. / Samour, D. / Damlencourt, J.-F. / Blin, D. / Quiais-Marthon, S. / AIP et al. | 2003
- 143
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Preparation and Characterizations of High-kappa Gate Dielectric CaZrO~3 Thin Films by Sol-Gel TechnologyYu, T. / Zhu, W. / Chen, C. / Chen, X. / Krishnan, R. G. / AIP et al. | 2003
- 148
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High-kappa Dielectric Characterization by VUV Spectroscopic Ellipsometry and X-Ray ReflectionBoher, P. / Evrard, P. / Piel, J. P. / Defranoux, C. / Fouere, J. C. / Bellandi, E. / Bender, H. / AIP et al. | 2003
- 154
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Non-destructive Characterization and Metrology for Ultrathin High-kappa Dielectric LayersChampaneria, R. / Mack, P. / White, R. / Wolstenholme, J. / AIP et al. | 2003
- 160
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Non-contact C-V Technique for High-kappa ApplicationsEdelman, P. / Savtchouk, A. / Wilson, M. / D Amico, J. / Kochey, J. N. / Marinskiy, D. / Lagowski, J. / AIP et al. | 2003
- 166
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A New Characterization Technique for Depth-Dependent Dielectric Properties of High-kappa Films by Open-Circuit Potential MeasurementKita, K. / Sasagawa, M. / Kyuno, K. / Toriumi, A. / AIP et al. | 2003
- 171
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Optical Properties of Silicon Oxynitride Thin Films Determined by Vacuum Ultraviolet Spectroscopic EllipsometryKim, H. J. / Cho, Y. J. / Cho, H. M. / Kim, S. Y. / Moon, C. / Cho, G. / Kwon, Y. / AIP et al. | 2003
- 176
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Characterization of Hafnium Oxide Thin Films Prepared by MOCVDChoy, S. F. / Lim, V. S. W. / Gopalakrishan, R. / Trigg, A. / Bera, L. K. / Matthew, S. / Balasubramanian, N. / Joo, M.-S. / Cho, B.-J. / Yeo, C. C. et al. | 2003
- 181
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Optical Properties of Jet-Vapor-Deposited TiAlO and HfAlO Determined by Vacuum Ultraviolet Spectroscopic EllipsometryNguyen, N. V. / Han, J.-P. / Kim, J. Y. / Wilcox, E. / Cho, Y. J. / Zhu, W. / Luo, Z. / Ma, T. P. / AIP et al. | 2003
- 186
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High-kappa Dielectric Stack-Ellipsometry and Electron Diffraction Measurements of Interfacial OxidesChoi, K. / Harris, H. R. / Nikishin, S. / Gangopadhyay, S. / Temkin, H. / AIP et al. | 2003
- 190
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Submillimeter-Wavelength Plasma Diagnostics for Semiconductor ManufacturingBenck, E. C. / Golubiatnikov, G. Y. / Fraser, G. T. / Pluesquelic, D. / Lavrich, R. / Ji, B. / Motika, S. A. / Karwacki, E. J. / AIP et al. | 2003
- 195
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Monitoring Sheath Voltages and Ion Energies in High-Density Plasmas Using Noninvasive Radio-Frequency Current and Voltage MeasurementsSobolewski, M. A. / AIP et al. | 2003
- 200
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Effects of Lightpipe Proximity on Si Wafer Temperature in Rapid Thermal Processing ToolsKreider, K. G. / Chen, D. H. / DeWitt, D. P. / Kimes, W. A. / Tsai, B. K. / AIP et al. | 2003
- 205
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Analytical Methodologies for Semiconductor Process Characterization- Novel Mass Spectrometric MethodsVartanian, V. H. / Goolsby, B. / AIP et al. | 2003
- 213
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Characterization of Si/SiGe Heterostructures for Strained Si CMOSMooney, P. M. / Koester, S. J. / Hovel, H. J. / Chu, J. O. / Chan, K. K. / Jordan-Sweet, J. L. / Ott, J. A. / Klymco, N. / Mocuta, D. M. / AIP et al. | 2003
- 223
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Characterization Techniques for Evaluating Strained Si CMOS MaterialsXie, Q. / Liu, R. / Wang, X.-D. / Canonico, M. / Duda, E. / Lu, S. / Cook, C. / Volinsky, A. A. / Zollner, S. / Thomas, S. G. et al. | 2003
- 228
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Root-Cause Analysis and Statistical Process Control of Epilayers for SiGe:C Hetero-Structure Bipolar TransistorsXie, Q. / Duda, E. / Kottke, M. / Qin, W. / Wang, X.-D. / Lu, S. / Erickson, M. / Kretzschmar, H. / Cross, L. / Murphy, S. et al. | 2003
- 233
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Graded Si~1~-~X Ge~X Metrology Using a Multi-technology Optical SystemPois, H. / Huang, J. / Morris, S. / Peterlinz, K. / Zangooie, S. / Liu, J. P. / Tan, B. L. / Sohn, D. K. / Jones, R. / Scheirer, C. et al. | 2003
- 238
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Characterization of SiGe Bulk Compositional Standards with Electron Probe MicroanalysisMarinenko, R. B. / Armstrong, J. T. / Turner, S. / Steel, E. B. / Stevie, F. A. / AIP et al. | 2003
- 245
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Characterization of Organic Contaminants Outgassed from Materials Used in Semiconductor Fabs/ProcessingSun, P. / Ayre, C. / Wallace, M. / AIP et al. | 2003
- 254
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Direct to Digital Holography for High Aspect Ratio Inspection of Semiconductor WafersThomas, C. E. / Hunt, M. A. / Bahm, T. M. / Baylor, L. R. / Bingham, P. R. / Chidley, M. D. / Dai, X. / Delahanty, R. J. / El-Khashab, A. / Gilbert, J. M. et al. | 2003
- 271
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Challenges of Finer Particle Detection on Unpatterned Silicon WafersHattori, T. / Okamoto, A. / Kuniyasu, H. / AIP et al. | 2003
- 278
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Characterization of Missing-Poly Defects in Ion Implantation in ULSI ManufacturingDunham, B. / Anundson, R. / Zhao, Z. Y. / AIP et al. | 2003
- 284
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Full-Wafer Defect Identification Using X-Ray TopographyBowen, D. K. / Wormington, M. / Feichtinger, P. / Joyce, D. E. / AIP et al. | 2003
- 289
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Contamination-Free Manufacturing: Tool Component Qualification, Verification, and Correlation with WafersTan, S. H. / Chen, N. / Liu, S. / Wang, K. / AIP et al. | 2003
- 294
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TOFSIMS Characterization of Molecular Contamination Induced Resist ScummingLee, J. J. / Guenther, T. / Brownson, R. / Frezon, S. / AIP et al. | 2003
- 300
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Controlling Wafer Contamination Using Automated On-Line Metrology during Wet Chemical CleaningWang, J. / Kingston, S. / Han, Y. / Saini, H. / McDonald, R. / Mui, R. / AIP et al. | 2003
- 309
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Should We Analyze for Trace Metal Contamination at the Edge, Bevel, and Edge Exclusion of Wafers?Beebe, M. / Sparks, C. / Carpio, R. / AIP et al. | 2003
- 313
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NIST Calibration Facility for Sizing Spheres Suspended in LiquidsDonnelly, M. K. / Mulholland, G. W. / Winchester, M. R. / AIP et al. | 2003
- 321
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Measurement of Gate-Oxide Film Thicknesses by X-Ray Photoelectron SpectroscopyPowell, C. J. / Jablonski, A. / AIP et al. | 2003
- 326
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Assessment of Ultrathin SiO~2 Film Thickness Measurement Precision by EllipsometryChandler-Horowitz, D. / Nguyen, N. V. / Ehrstein, J. R. / AIP et al. | 2003
- 331
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Thickness Evaluation for 2nm SiO~2 Films, a Comparison of Ellipsometric, Capacitance-Voltage, and HRTEM MeasurementsEhrstein, J. / Richter, C. / Chandler-Horowitz, D. / Vogel, E. / Ricks, D. / Young, C. / Spencer, S. / Shah, S. / Maher, D. / Foran, B. et al. | 2003
- 337
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Uncertainties Caused by Surface Adsorbates in Estimates of the Thickness of SiO~2 Ultrathin FilmsAzuma, Y. / Tan, R. / Fujimoto, T. / Kojima, I. / Shinozaki, A. / Morita, M. / AIP et al. | 2003
- 343
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Quantification of Local Elastic Properties Using Ultrasonic Force MicroscopyKraatz, M. / Geisler, H. / Zschech, E. / AIP et al. | 2003
- 348
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Determination of Factors Affecting HRTEM Gate Dielectric Thickness Measurement UncertaintyScott, J. H. J. / AIP et al. | 2003
- 353
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Microtensile Testing of Thin Films in the Optical and Scanning Electron MicroscopesRead, D. T. / McColskey, J. D. / Geiss, R. / Cheng, Y.-W. / AIP et al. | 2003
- 357
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Non-destructive Surface Profile Measurement of a Thin Film Deposited on a Patterned SampleKim, D. / Chegal, W. / Kim, S. / Kong, H. J. / Lee, Y. / AIP et al. | 2003
- 365
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Overview of Lithography: Challenges and MetrologiesLevinson, H. J. / AIP et al. | 2003
- 371
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EUV Mask Blank Fabrication and MetrologySeidel, P. / AIP et al. | 2003
- 381
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Review of CD Measurement and ScatterometryThony, P. / Herisson, D. / Henry, D. / Severgnini, E. / Vasconi, M. / AIP et al. | 2003
- 389
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Advanced Mask Inspection and MetrologyYoshioka, N. / Terasawa, T. / AIP et al. | 2003
- 396
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Application of High-Pressure/Environmental Scanning Electron Microscopy to Photomask Dimensional MetrologyPostek, M. T. / Vladar, A. E. / AIP et al. | 2003
- 400
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A Model for Step Height, Edge Slope, and Linewidth Measurements Using AFMZhao, X. / Vorburger, T. V. / Fu, J. / Song, J. / Nguyen, C. V. / AIP et al. | 2003
- 409
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A Primary Standard for 157 nm Excimer Laser MeasurementsCromer, C. L. / Dowell, M. L. / Jones, R. D. / Keenan, D. A. / Yang, S. / AIP et al. | 2003
- 413
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The Transition to Optical Wafer Flatness MetrologyValley, J. F. / Poduje, N. / AIP et al. | 2003
- 421
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Critical Dimension Calibration Standards for ULSI MetrologyAllen, R. A. / Cresswell, M. W. / Murabito, C. E. / Dixson, R. G. / Bogardus, E. H. / AIP et al. | 2003
- 429
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Form of Deprotection in Chemically Amplified ResistsJones, R. L. / Hu, T. / Prabhu, V. M. / Soles, C. L. / Lin, E. K. / Wu, W.-l. / Goldfarb, D. L. / Angelopoulos, M. / AIP et al. | 2003
- 434
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3-Dimensional Lineshape Metrology Using Small Angle X-Ray ScatteringJones, R. L. / Hu, T. / Lin, E. K. / Wu, W.-l. / Casa, D. M. / Barclay, G. G. / AIP et al. | 2003
- 439
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NEXAFS Measurements of the Surface Chemistry of Chemically Amplified PhotoresistsJablonski, E. L. / Lenhart, J. L. / Sambasivan, S. / Fischer, D. A. / Jones, R. L. / Lin, E. K. / Wu, W.-l. / Goldfarb, D. L. / Temple, K. / Angelopoulos, M. et al. | 2003
- 444
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Facility for Pulsed Extreme Ultraviolet Detector CalibrationGrantham, S. / Vest, R. / Tarrio, C. / Lucatorto, T. B. / AIP et al. | 2003
- 448
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Combinatorial Methods Study of Confinement Effects on the Reaction Front in Ultrathin Chemically Amplified PhotoresistsWang, M. X. / Lin, E. K. / Karim, A. / Fasolka, M. J. / AIP et al. | 2003
- 455
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Correlation of Surface and Film Chemistry with Mechanical Properties in InterconnectsZhou, Y. / Xu, G. / Scherban, T. / Leu, J. / Kloster, G. / Wu, C.-I. / AIP et al. | 2003
- 462
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Nanoscale Thermal and Thermoelectric Mapping of Semiconductor Devices and InterconnectsShi, L. / Lyeo, H. K. / Shih, C. K. / Kim, P. / Bachtold, A. / Plyosunov, S. / McEuen, P. L. / Majumdar, A. / AIP et al. | 2003
- 469
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Potential and Limits of Texture Measurement Techniques for Inlaid Copper Process OptimizationGeisler, H. / Zienert, I. / Prinz, H. / Meyer, M.-A. / Zschech, E. / AIP et al. | 2003
- 480
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In Situ X-Ray Microscopy Studies of Electromigration in Copper InterconnectsSchneider, G. / Meyer, A. M. / Zschech, E. / Denbeaux, G. / Neuhausler, U. / Guttmann, P. / AIP et al. | 2003
- 485
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Room Temperature Electroplated Copper Recrystallization: In Situ Mapping on 200/300 mm Patterned WafersKozaczek, K. J. / Martin, R. I. / Huang, L.-Y. / Kurtz, D. S. / Moran, P. R. / AIP et al. | 2003
- 490
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Metrology Tool for Microstructure Control on 300 mm Wafers during Damascene Copper ProcessingKozaczek, K. J. / Kurtz, D. S. / Moran, P. R. / Martin, R. I. / Huang, L.-Y. / Stratilatov, A. / AIP et al. | 2003
- 494
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Texture and Stress Analysis in As-Deposited and Annealed Damascene Cu Interconnects Using XRD and OIMMirpuri, K. / Szpunar, J. / Kozaczek, K. / AIP et al. | 2003
- 499
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Microstructure Analysis in As-Deposited and Annealed Damascene Cu Interconnects Using OIMMirpuri, K. / Szpunar, J. / Kozaczek, K. / AIP et al. | 2003
- 504
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Controlling Copper Electrochemical Deposition (ECD)West, M. / McDonald, R. / Anderson, M. / Kingston, S. / Mui, R. / AIP et al. | 2003
- 514
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Analysis and Control of Copper Plating Bath Additives and By-ProductsNewton, B. / Kaiser, E. / AIP et al. | 2003
- 519
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Characterization of Barrier Layer Phase and Morphology as a Function of Differing Dielectric Substrate Conditions by AFM and Grazing Angle XRDWang, C. C. / Lai, G. / Brundle, C. R. / Uritsky, Y. / AIP et al. | 2003
- 525
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Nanoindentation Study of the Mechanical Behavior of Silicon Nano-SpringsLi, B. / Luo, Z. / Ho, P. S. / Lu, T.-M. / AIP et al. | 2003
- 533
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Impact of Low-kappa Dielectrics on Electromigration Reliability for Cu InterconnectsHo, P. S. / Lee, K.-D. / Ogawa, E. T. / Yoon, S. / Lu, X. / AIP et al. | 2003
- 540
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New Infrared Spectroscopic Ellipsometer for Low-kappa Dielectric CharacterizationBoher, P. / Bucchia, M. / Guillotin, C. / Defranoux, C. / Fouere, J. C. / AIP et al. | 2003
- 546
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Pore Size Distribution Measurement of Porous Low-kappa Dielectrics Using TR-SAXSTerada, S. / Kinashi, T. / Spear, J. / AIP et al. | 2003
- 551
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Material Characterization and the Formation of Nanoporous PMSSQ Low-kappa DielectricsLazzeri, P. / Vanzetti, L. / Iacob, E. / Bersani, M. / Anderle, M. / Park, J. J. / Lin, Z. / Briber, R. M. / Rubloff, G. W. / Miller, R. D. et al. | 2003
- 556
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Determination of Pore-Size Distributions in Low-kappa Dielectric Films by Transmission Electron MicroscopyForan, B. J. / Kastenmeier, B. / Bright, D. S. / AIP et al. | 2003
- 562
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Porosity Characterization of Porous SiLK™ Low-kappa Dielectric FilmsMohler, C. E. / Landes, B. G. / Meyers, G. F. / Kern, B. J. / Ouellette, K. B. / Magonov, S. / AIP et al. | 2003
- 567
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Measurement of Pore Size and Matrix Characteristics in Low-kappa Dielectrics by Neutron Contrast VariationHedden, R. C. / Lee, H.-J. / Bauer, B. J. / Soles, C. L. / Wu, W.-l. / Lin, E. K. / AIP et al. | 2003
- 572
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The Structural Evolution of Pore Formation in Low-kappa Dielectric Thin FilmsSilverstein, M. S. / Bauer, B. J. / Lee, H.-J. / Hedden, R. C. / Landes, B. / Lyons, J. / Kern, B. / Niu, J. / Kalantar, T. / AIP et al. | 2003
- 576
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X-Ray Porosimetry as a Metrology to Characterize the Pore Structure of Low-kappa Dielectric FilmsSoles, C. L. / Lee, H.-J. / Hedden, R. C. / Liu, D.-W. / Bauer, B. J. / Wu, W.-l. / AIP et al. | 2003
- 583
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In Situ Metrology: The Path to Real-Time Advanced Process ControlRubloff, G. W. / AIP et al. | 2003
- 592
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Automated, On-Line, Trace Contamination and Chemical Species Analysis for the Semiconductor IndustryKingston, S. / McDonald, R. / Han, Y. / Wang, J. / West, M. / Stewart, L. / Ormond, B. / Mui, R. / AIP et al. | 2003
- 606
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On-Line Analysis of Process Chemicals by Inductively Coupled Plasma Mass Spectrometry (ICP-MS)Kishi, Y. / Kawabata, K. / Palsulich, D. / Wiederin, D. / AIP et al. | 2003
- 611
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Novel Applications of Gas-Phase Analytical Methods to Semiconductor Process EmissionsGoolsby, B. / Vartanian, V. H. / AIP et al. | 2003
- 619
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Overview of CD-SEM-And BeyondJoy, D. C. / AIP et al. | 2003
- 627
-
Transmission Electron Microscopy: Overview and ChallengesPennycook, S. J. / Lupini, A. R. / Borisevich, A. / Varela, M. / Peng, Y. / Nellist, P. D. / Duscher, G. / Buczko, R. / Pantelides, S. T. / AIP et al. | 2003
- 634
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High-Resolution X-Ray Scattering Methods for ULSI Materials CharacterizationMatyi, R. J. / AIP et al. | 2003
- 646
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Advances in X-Ray Reflectivity (XRR) and X-Ray Fluorescence (XRF) Measurements Provide Unique Advantages for Semiconductor ApplicationsSpear, J. / Murakami, H. / Terada, S. / AIP et al. | 2003
- 651
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Characterization of Porous, Low-kappa Dielectric Thin-Films Using X-Ray ReflectivityWormington, M. / Russell, C. / AIP et al. | 2003
- 656
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Ultra-shallow Junction Metrology Using the Therma-Probe ToolBakshi, M. / Nicolaides, L. / Cherekdjian, S. / Tichy, R. / AIP et al. | 2003
- 660
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Practical Fab Applications of X-Ray MetrologyAgnihotri, D. / Formica, J. / Gallegos, J. / O Dell, J. / AIP et al. | 2003
- 667
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Study of Oxide Quality for Scanning Capacitance Microscope MeasurementsLim, V. S. W. / Jiang, Y. / Trigg, A. / AIP et al. | 2003
- 672
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Application of SCM to Process Development of Novel DevicesDuhayon, N. / Vandervorst, W. / Hellemans, L. / AIP et al. | 2003
- 678
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Assessing the Resolution Limits of Scanning Spreading Resistance Microscopy and Scanning Capacitance MicroscopyEyben, P. / Duhayon, N. / Alvarez, D. / Vandervorst, W. / AIP et al. | 2003
- 685
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Recent Progress and Insights in Two-Dimensional Carrier Profiling Using Scanning Spreading Resistance MicroscopyEyben, P. / Alvarez, D. / Clarysse, T. / Denis, S. / Vandervorst, W. / AIP et al. | 2003
- 695
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Ultra-shallow Depth Profiling by Secondary Ion Mass Spectrometry TechniquesAnderle, M. / Barozzi, M. / Bersani, M. / Giubertoni, D. / Lazzeri, P. / AIP et al. | 2003
- 705
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In Situ Sputtering Rate Measurement by Laser Interferometer Applied to SIMS AnalysesBersani, M. / Giubertoni, D. / Barozzi, M. / Bertoldi, S. / Vanzetti, L. / Iacob, E. / Anderle, M. / AIP et al. | 2003
- 710
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Bevel Depth Profiling SIMS for Analysis of Layer StructuresGillen, G. / Wight, S. / Chi, P. / Fahey, A. / Verkouteren, J. / Windsor, E. / Fenner, D. B. / AIP et al. | 2003
- 715
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Using Direct Solid Sampling ICP-MS to Complement SEM-EDX and SIMS in Characterizing Semiconductor MaterialsLi, F. / Anderson, S. / AIP et al. | 2003
- 723
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Status and Prospects for VUV Ellipsometry (Applied to High-kappa and Low-kappa Materials)Edwards, N. V. / AIP et al. | 2003
- 738
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Applications of UV-Raman Spectroscopy to Microelectronic Materials and DevicesLiu, R. / Canonico, M. / AIP et al. | 2003
- 744
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Characterization of Ion-Implantation in Silicon by Using Laser Infrared Photo-Thermal Radiometry (PTR)Garcia, J. A. / Guo, X. / Mandelis, A. / Simmons, A. / Li, B. / AIP et al. | 2003
- 748
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In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase ProcessesMaslar, J. E. / Hurst, W. S. / AIP et al. | 2003
- 753
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One-Dimensional Spectroscopic Measurement of Patterned Structures Using a Custom-Built Spectral Imaging EllipsometerChegal, W. / Kim, D. / Kim, S. / Cho, Y. J. / Cho, H. M. / Lee, Y. W. / AIP et al. | 2003
- 758
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Carrier Illumination as a Tool to Probe Implant Dose and Electrical ActivationVandervorst, W. / Clarysse, T. / Brijs, B. / Loo, R. / Peytier, Y. / Pawlak, B. J. / Budiarto, E. / Borden, P. / AIP et al. | 2003
- 764
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Fiber Optic Fourier Transform Infrared Spectroscopic Techniques for Advanced On-Line Chemical Analysis in Semiconductor Fabrication ToolsKester, M. / Trygstad, M. / Chabot, P. / AIP et al. | 2003
- 771
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Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal-Oxide-Semiconductor DevicesVogel, E. M. / Brown, G. A. / AIP et al. | 2003
- 782
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Status of Non-contact Electrical MeasurementsKomin, V. V. / Bello, A. F. / Brundle, C. R. / Uritsky, Y. S. / AIP et al. | 2003
- 796
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In-Line, Non-destructive Electrical Metrology of Nitrided Silicon Dioxide and High-kappa Gate Dielectric LayersHillard, R. J. / Hung, P. Y. / Chism, W. / Ye, C. W. / Howland, W. H. / Tan, L. C. / Kalnas, C. E. / AIP et al. | 2003
- 802
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Non-contact Electrical Doping ProfilingMarinskiy, D. / Lagowski, J. / D Amico, J. / Findlay, A. / Jastrzebski, L. / AIP et al. | 2003