Semiconductor wafer bonding 9: science, technology, and applications : [Ninth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, held in Cancun, Mexico, as part of the 2006 fall meeting of the Electrochemical Society] (English)
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2006
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ISBN:
- Conference Proceedings / Print
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Title:Semiconductor wafer bonding 9: science, technology, and applications : [Ninth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, held in Cancun, Mexico, as part of the 2006 fall meeting of the Electrochemical Society]
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Contributors:
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Conference:International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications ; 2006 ; Cancun
Fall meeting. Electrochemical Society (ECS) ; 210 ; 2006 ; Cancun -
Published in:ECS transactions ; 3,6
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington, NJ
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Publication date:2006
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Size:VIII, 386 S
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Remarks:Ill., graph. Darst
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ISBN:
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Type of media:Conference Proceedings
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Can 3-D Devices Extend Moore's Law Beyond the 32 nm Technology Node?Orlowski, M. / Wild, A. / Electrochemical Society et al. | 2006
- 19
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New Heterostructures and 3D Devices Obtained at CEA/LETI by the Bonding and Thinning MethodDi Cioccio, L. / Electrochemical Society et al. | 2006
- 33
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Automotive Semiconductor Devices Using Bonded SOI WafersFujino, S. / Himi, H. / Electrochemical Society et al. | 2006
- 47
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Thin Film Transfer for the Fabrication of Multiple Gate MOS TransistorsOlbrechts, B. / Sodervall, U. / Bengtsson, S. / Raskin, J. / Electrochemical Society et al. | 2006
- 59
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Triple Stack Bonding for High Voltage Si DevicesHobart, K. D. / Kub, F. J. / Phlips, B. F. / Kurfess, J. D. / Neilson, J. / Electrochemical Society et al. | 2006
- 67
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Fabrication Techniques for Thin-Film Silicon Layer TransferHoll, S. / Varasala, R. / Jawanda, H. / Colinge, C. A. / Hobart, K. D. / Kub, F. J. / Song, S. / Electrochemical Society et al. | 2006
- 75
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Si-Based Resonant Tunneling Devices Using UHV Wafer BondingKim, M. / Lee, T. / Kim, J. / Wallace, R. M. / Gnade, B. / Electrochemical Society et al. | 2006
- 79
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New Generation of Structures Obtained by Direct Wafer Bonding of Processed WafersAspar, B. / Lagahe-Blanchard, C. / Sousbie, N. / Margail, J. / Moriceau, H. / Electrochemical Society et al. | 2006
- 91
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Sequential Activation Process of oxygen RIE and nitrogen Radical for LiTaO3 and Si Wafer BondingZikuhara, Y. / Higurashi, E. / Tamura, N. / Suga, T. / Electrochemical Society et al. | 2006
- 99
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Strained Si via Plasma Enhanced dTCE BondingSood, S. / Belford, R. / Electrochemical Society et al. | 2006
- 107
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Highly-Strained Silicon-On-Insulator DevelopmentAkatsu, T. / Hartmann, J. / Aulnette, C. / Le Vaillant, Y. / Rouchon, D. / Abbadie, A. / Bogumilowicz, Y. / Portigliatti, L. / Colnat, C. / Boudou, N. et al. | 2006
- 119
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Evolution of Lattice Strain in Hydrogen-Implanted Silicon Prior to Layer Splitting: An X-Ray Scattering StudyCapello, L. / Rieutord, F. / Tauzin, A. / Mazen, F. / Sousbie, N. / Letertre, F. / Electrochemical Society et al. | 2006
- 129
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InAs on Insulator by Hydrogen Implantation and ExfoliationHayashi, S. L. / Noori, A. / Sandhu, R. / Cavus, A. / Gutierrez-Aitken, A. / Goorsky, M. S. / Electrochemical Society et al. | 2006
- 139
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Low Temperature Void Free Hydrophilic or Hydrophobic Silicon Direct BondingFournel, F. / Moriceau, H. / Beneyton, R. / Electrochemical Society et al. | 2006
- 147
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Plasma Activated Wafer Bonding of Silicon: In Situ and Ex Situ ProcessesDragoi, V. / Lindner, P. / Electrochemical Society et al. | 2006
- 155
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Cu-Cu Room Temperature Bonding - Current Status of Surface Activated Bonding(SAB)Suga, T. / Electrochemical Society et al. | 2006
- 165
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Low Temperature Bonding of PECVD Silicon Dioxide LayersBaine, P. T. / Bain, M. / McNeill, D. / Gamble, H. / Armstrong, M. / Electrochemical Society et al. | 2006
- 175
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Atmospheric Plasma Conditions Compatible with Wafer to Wafer Bonding StrategiesFarrens, S. N. / Gabriel, M. / Electrochemical Society et al. | 2006
- 181
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Plasma Assisted Low-Temperature Hydrophobic Wafer BondingBreninford, M. P. / Bailey, D. / Ikram, H. / Colinge, C. A. / Holl, S. / Electrochemical Society et al. | 2006
- 189
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Plasma Activated Wafer Bonding as an Alternative to Standard Wafer Bonding ProcessesDragoi, V. / Matthias, T. / Mittendorfer, G. / Lindner, P. / Electrochemical Society et al. | 2006
- 191
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Sequential Plasma Activated Process for Silicon Direct BondingHowlader, M. R. / Itoh, H. / Suga, T. / Kim, M. / Electrochemical Society et al. | 2006
- 205
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Rough Surface Adhesion Mechanisms for Wafer BondingRieutord, F. / Moriceau, H. / Beneyton, R. / Capello, L. / Morales, C. / Charvet, A. / Electrochemical Society et al. | 2006
- 217
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Relation Between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si InterfacesRaeissi, B. / Sanz-Velasco, A. / Engstrom, O. / Electrochemical Society et al. | 2006
- 227
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Quantitative Model-Based Interpretation of Experimentally Measured Nanoscale Stress Sources at Wafer Bonded InterfacesHorn, G. / Johnson, H. / Mackin, T. / Lesniak, J. / Electrochemical Society et al. | 2006
- 239
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Effect of Prebonding Surface Treatments on Si-Si Direct Bonding : Bonding Void DecreaseBeneyton, R. / Fournel, F. / Rieutord, F. / Morales, C. / Moriceau, H. / Electrochemical Society et al. | 2006
- 249
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Non-Destructive Strength Characterization of Full-Wafer Bonds: A Modified Blister Test Method Enables a Controlled Crack Formation at the Bond InterfaceRabold, M. / Doll, A. / Goldschmidtboeing, F. / Woias, P. / Electrochemical Society et al. | 2006
- 261
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Controlled Silicon (001) Surface Periodic Nanopatterning by Direct Wafer BondingBavard, A. / Meziere, J. / Fournel, F. / Pascale, A. / Gentile, P. / Eymery, J. / Electrochemical Society et al. | 2006
- 269
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Comparison of the Mechanical Properties of Low Temperature Bonded Test SamplesBagdahn, J. / Bernasch, M. / Fischer, C. / Wiemer, M. / Electrochemical Society et al. | 2006
- 279
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Direct Wafer Bonding Enhanced by Ductile Layers Inserted Near the InterfaceOlbrechts, B. / Lejeune, B. / Bertholet, Y. / Pardoen, T. / Raskin, J. / Electrochemical Society et al. | 2006
- 293
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Review of Compound Materials Bonding and Layer Transfer for Optoelectronic ApplicationsFaure, B. / Electrochemical Society et al. | 2006
- 305
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Simple Technological Process for the Fabrication of Optical III-V Nanowires Integrated into a Benzocyclobutene MatrixCarette, M. / Lauvernier, D. / Vilcot, J. / Bernard, D. / Decoster, D. / Electrochemical Society et al. | 2006
- 311
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Dislocation-Induced Light EmissionReiche, M. / Kittler, M. / Wilhelm, T. / Arguirov, T. / Seifert, W. / Yu, X. / Mchedlidze, T. / Electrochemical Society et al. | 2006
- 321
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Adhesive Bonding of III-V Dies to Processed SOI Using BCB for Photonic ApplicationsRoelkens, G. / Batalliou, B. / Brouckaert, J. / Van Laere, F. / Van Thourhout, D. / Baets, R. / Electrochemical Society et al. | 2006
- 327
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Wafer Bonding of CdZnTe / Si StructuresGoorsky, M. S. / Miclaus, C. / Electrochemical Society et al. | 2006
- 335
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Enhance the Luminance Intensity of InGaN-GaN Light-Emitting Diode by Roughening both the p-GaN Surface and the Undoped-GaN Surface Using Wafer Bonding MethodsWu, Y. S. / Chih, W. W. / Electrochemical Society et al. | 2006
- 341
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Wafer Bonding Technologies in Industrial MEMS Processing - Potentials and ChallengesKnechtel, R. / Electrochemical Society et al. | 2006
- 355
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Low Temperature Plasma-Assisted-Wafer-Bonding for MEMSSanz-Velasco, A. / Bring, M. / Rodjegard, H. / Andersson, G. / Enoksson, P. / Electrochemical Society et al. | 2006
- 367
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Moisture Resistant Nano Liter Packages Using Metallic Seal Wafer BondingReinert, W. H. / Merz, P. / Schwarzelbach, O. / Electrochemical Society et al. | 2006
- 369
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Adhesive Wafer Bonding with SU-8 Intermediate Layers for Microfluidic ApplicationsDragoi, V. / Mittendorfer, G. / Thanner, C. / Matthias, T. / Glinsner, T. / Lindner, P. / Electrochemical Society et al. | 2006
- 377
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Anodic and Direct Bonding of Si and Glass - Similarities and Distinctions in ApplicationsGabriel, M. / Cetin, V. / Ludewig, T. / Eichler, M. / Electrochemical Society et al. | 2006