Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETs (English)
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- New search for: Reigosa, Paula Diaz
- New search for: Iannuzzo, Francesco
- New search for: Ceccarelli, Lorenzo
- New search for: Reigosa, Paula Diaz
- New search for: Iannuzzo, Francesco
- New search for: Ceccarelli, Lorenzo
- Article (Journal) / Electronic Resource
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Title:Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETs
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Contributors:
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Publication date:2018-09-01
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Remarks:Reigosa , P D , Iannuzzo , F & Ceccarelli , L 2018 , ' Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETs ' , Microelectronics Reliability , vol. 88-90 , pp. 577-583 . https://doi.org/10.1016/j.microrel.2018.07.144
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
- New search for: 621
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DDC: 621 -
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