High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth (Unknown)
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In:
Crystals, Vol 13, Iss 3, p 454 (2023)
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2023
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ISSN:
- Article (Journal) / Electronic Resource
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Title:High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth
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Contributors:Yingnan Huang ( author ) / Jianxun Liu ( author ) / Xiujian Sun ( author ) / Xiaoning Zhan ( author ) / Qian Sun ( author ) / Hongwei Gao ( author ) / Meixin Feng ( author ) / Yu Zhou ( author ) / Hui Yang ( author )
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Published in:
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Publisher:
- New search for: MDPI AG
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Publication date:2023
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:Unknown
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Keywords:
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Source:
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