Method For Etching High-k Metal Gate Stack (Chinese)
Free access
- New search for: SHIN SU-BUM
- New search for: LEE HAE-JUNG
- New search for: SHIN SU-BUM
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2021
- Patent / Electronic Resource
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Title:Method For Etching High-k Metal Gate Stack
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Additional title:用于刻蚀高k金属栅层叠的方法
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Patent number:CN113506730
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Patent applicant:
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Patent family:
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Contributors:SHIN SU-BUM ( author ) / LEE HAE-JUNG ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2021-10-15
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Type of media:Patent
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Type of material:Electronic Resource
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Language:Chinese
- New search for: H01L
- Further information on International Patent Classification
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
Source: