Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device (Chinese)
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- New search for: KAWADA YASUYUKI
- New search for: KAWADA YASUYUKI
2023
- Patent / Electronic Resource
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Title:Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
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Additional title:碳化硅半导体装置以及碳化硅半导体装置的制造方法
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Patent number:CN115706151
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Patent applicant:
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Patent family:
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Contributors:KAWADA YASUYUKI ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2023-02-17
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Type of media:Patent
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Type of material:Electronic Resource
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Language:Chinese
- New search for: H01L
- Further information on International Patent Classification
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
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