ATOMIC LAYER DEPOSITION BASED PROCESS FOR CONTACT BARRIER LAYER (Korean)
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2019
- Patent / Electronic Resource
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Title:ATOMIC LAYER DEPOSITION BASED PROCESS FOR CONTACT BARRIER LAYER
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Additional title:콘택 배리어층을 위한 원자층 퇴적 기반 프로세스
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Patent number:KR20190056270
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Patent applicant:
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Patent family:
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Contributors:CHENG CHUNG LIANG ( author ) / LIU YU LIN ( author ) / LIN MING HSIEN ( author ) / LUO TZO HUNG ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2019-05-24
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Type of media:Patent
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Type of material:Electronic Resource
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Language:Korean
- New search for: H01L
- Further information on International Patent Classification
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
Source: