기화된 도펀트를 사용하여 단결정 실리콘 잉곳을 생성하기위한 시스템들 및 방법들 (Korean)
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2023
- Patent / Electronic Resource
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Title:기화된 도펀트를 사용하여 단결정 실리콘 잉곳을 생성하기위한 시스템들 및 방법들
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Patent number:KR20230124727
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Patent applicant:
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Patent family:
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Contributors:WU YU CHIAO ( author ) / LUTER WILLIAM LYNN ( author ) / PHILLIPS RICHARD J ( author ) / EOFF JAMES DEAN ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2023-08-25
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Type of media:Patent
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Type of material:Electronic Resource
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Language:Korean
- New search for: C30B
- Further information on International Patent Classification
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Classification:
IPC: C30B SINGLE-CRYSTAL GROWTH, Züchten von Einkristallen -
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