Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon (English)
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2021
- Patent / Electronic Resource
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Title:Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
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Patent number:US11094705
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- New search for: Europäisches Patentamt
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Publication date:2021-08-17
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Type of media:Patent
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Type of material:Electronic Resource
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Language:English
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
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