Gate cut and fin trim isolation for advanced integrated circuit structure fabrication (English)
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- New search for: GHANI TAHIR
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2022
- Patent / Electronic Resource
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Title:Gate cut and fin trim isolation for advanced integrated circuit structure fabrication
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Patent number:US11322601
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Patent applicant:
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Patent family:
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Contributors:GHANI TAHIR ( author ) / HO BYRON ( author ) / HATTENDORF MICHAEL L ( author ) / AUTH CHRISTOPHER P ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2022-05-03
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Type of media:Patent
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Type of material:Electronic Resource
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Language:English
- New search for: H01L
- Further information on International Patent Classification
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
Source: