METHOD FOR PRODUCING A PASSIVATED SEMICONDUCTOR STRUCTURE BASED ON GROUP III NITRIDES, AND ONE SUCH STRUCTURE (English)
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2018
- Patent / Electronic Resource
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Title:METHOD FOR PRODUCING A PASSIVATED SEMICONDUCTOR STRUCTURE BASED ON GROUP III NITRIDES, AND ONE SUCH STRUCTURE
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Patent number:US2018012753
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Publication date:2018-01-11
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Type of media:Patent
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Type of material:Electronic Resource
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Language:English
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
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