METHOD TO FORM AIR GAP STRUCTURE WITH DUAL DIELECTRIC LAYER (English)
Free access
- New search for: MCGAHAY VINCENT J
- New search for: GRUSZECKI CRAIG R
- New search for: AN JU JIN
- New search for: LEE TIM H
- New search for: VAN KLEECK TODD J
- New search for: MCGAHAY VINCENT J
- New search for: GRUSZECKI CRAIG R
- New search for: AN JU JIN
- New search for: LEE TIM H
- New search for: VAN KLEECK TODD J
2021
- Patent / Electronic Resource
-
Title:METHOD TO FORM AIR GAP STRUCTURE WITH DUAL DIELECTRIC LAYER
-
Patent number:US2021358840
-
Patent applicant:
-
Patent family:
-
Contributors:MCGAHAY VINCENT J ( author ) / GRUSZECKI CRAIG R ( author ) / AN JU JIN ( author ) / LEE TIM H ( author ) / VAN KLEECK TODD J ( author )
-
Publisher:
- New search for: Europäisches Patentamt
-
Publication date:2021-11-18
-
Type of media:Patent
-
Type of material:Electronic Resource
-
Language:English
- New search for: H01L
- Further information on International Patent Classification
-
Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
Source: