Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material (English)
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- New search for: KUB FRANCIS J
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2015
- Patent / Electronic Resource
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Title:Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material
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Patent number:US9111786
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Patent applicant:
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Patent family:
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Contributors:KUB FRANCIS J ( author ) / ANDERSON TRAVIS J ( author ) / MASTRO MICHAEL A ( author ) / EDDY JR CHARLES R ( author ) / HITE JENNIFER K ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2015-08-18
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Type of media:Patent
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Type of material:Electronic Resource
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Language:English
- New search for: H01L
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
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