PROCÉDÉ DE FABRICATION D'UNE STRUCTURE SEMI-CONDUCTRICE À BASE DE NITRURES D'ÉLÉMENTS III PASSIVÉE ET UNE TELLE STRUCTURE (French)
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2016
- Patent / Electronic Resource
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Title:PROCÉDÉ DE FABRICATION D'UNE STRUCTURE SEMI-CONDUCTRICE À BASE DE NITRURES D'ÉLÉMENTS III PASSIVÉE ET UNE TELLE STRUCTURE
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Additional title:METHOD FOR PRODUCING A PASSIVATED SEMICONDUCTOR STRUCTURE BASED ON GROUP III NITRIDES, AND ONE SUCH STRUCTURE
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Patent number:WO2016116713
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Patent applicant:
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Patent family:
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- New search for: Europäisches Patentamt
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Publication date:2016-07-28
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Type of media:Patent
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Type of material:Electronic Resource
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Language:French
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
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