Lifetime Limiting Defects in 4H-SiC (English)
- New search for: P. B. Klein
- New search for: B. V. Shanabrook
- New search for: S. W. Huh
- New search for: A. Y. Polyakov
- New search for: M. Skowronski
- New search for: P. B. Klein
- New search for: B. V. Shanabrook
- New search for: S. W. Huh
- New search for: A. Y. Polyakov
- New search for: M. Skowronski
2008
- Report / No indication
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Title:Lifetime Limiting Defects in 4H-SiC
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Contributors:P. B. Klein ( author ) / B. V. Shanabrook ( author ) / S. W. Huh ( author ) / A. Y. Polyakov ( author ) / M. Skowronski ( author )
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Publisher:
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Publication date:2008
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Size:3 pages
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Type of media:Report
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Type of material:No indication
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Language:English
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Contract Number:ADA517986/XAB
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Keywords:Basic & Synthetic Chemistry , Physics , Physical & Theoretical Chemistry , Electrotechnology , Charge carriers , Half life , Defects(Materials) , Neutron lifetime , Silicon carbides , Molecular structure , Electronic equipment , Atoms , Electrical properties , Electrons , Purity , Reliability , Limitations , Mobile , High density , Electric power , Electrical equipment , Solid state electronics , Switching circuits , Growth(General) , Materials , Naval vessels , Degradation , Aircraft , Diodes , High power , 4h-sic(Silicon carbide) , Lifetime , Sic(Silicon carbides) , Mcl(Minority carrier lifetime) , Dlt(Deep level transient spectroscopy)
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