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This report deals with the progress made during the seventh quarterly period of a solid state microwave oscillator and amplifier research and development program. Included are the results of studies of transferred electron punch-through injection, and avalanche diodes and solid state materials. Discussed first are LSA diodes and circuits, Gunn effect amplifiers and oscillators, a PCM Gunn oscillator, and GaAs materials studies. Next discussed are high average power TRAPATT diode structures and research on high frequency TRAPATT oscillators. Also reported are two studies of punch-through injection (Baritt) diodes, one for high frequency cw operation and the other for low frequency cw operation. Work on relaxing avalanche mode (RAM) oscillators is reported along with a summary of a new study on microwave transistors. The report concludes with a discussion of the progress made on ion implantation, on vacuum epitaxial growth in silicon and on ionization rates in GaAs.