SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C (English)
- New search for: Neudeck, Philip G.
- New search for: Spry, David J.
- New search for: Chen, Liang-Yu
- New search for: Okojie, Robert S.
- New search for: Beheim, Glenn M.
- New search for: Meredith, Roger
- New search for: Ferrier, Terry
- New search for: Neudeck, Philip G.
- New search for: Spry, David J.
- New search for: Chen, Liang-Yu
- New search for: Okojie, Robert S.
- New search for: Beheim, Glenn M.
- New search for: Meredith, Roger
- New search for: Ferrier, Terry
In:
Materials Science Forum
;
556-557
;
2006
- Conference paper / No indication
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Title:SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C
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Contributors:Neudeck, Philip G. ( author ) / Spry, David J. ( author ) / Chen, Liang-Yu ( author ) / Okojie, Robert S. ( author ) / Beheim, Glenn M. ( author ) / Meredith, Roger ( author ) / Ferrier, Terry ( author )
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Conference:European Conference on Silicon Carbide and Related Materials ; 2006 ; Newcastle, United Kingdom
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Published in:Materials Science Forum ; 556-557
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Publisher:
- New search for: NASA National Aeronautics and Space Administration
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Publication date:2006-09-04
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Type of media:Conference paper
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Type of material:No indication
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Language:English
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Contract Number:20150022229; GRC-WO-667825
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Keywords:
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Source: