High mobility top-gate thin film transistors fabricated with poly-Si1-xGex thin films on glass substrate (Unknown)
- New search for: Zhang, J.J.
- New search for: Zhang, J.J.
- New search for: Shimizu, K.
- New search for: Hanna, J.
In:
Journal of non-crystalline solids
;
338
, 1
; 740-743
;
2004
-
ISSN:
- Article (Journal) / Print
-
Title:High mobility top-gate thin film transistors fabricated with poly-Si1-xGex thin films on glass substrate
-
Contributors:
-
Published in:Journal of non-crystalline solids ; 338, 1 ; 740-743
-
Publisher:
- New search for: North-Holland Publ. Co.
-
Place of publication:Amsterdam
-
Publication date:2004
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:Unknown
- New search for: 51.45 / 51.60 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 338, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Microcrystalline silicon. - Growth and device applicationMatsuda, Akihisa et al. | 2004
- 13
-
Kinetics of silicon film growth and the deposition phase diagramFerreira, G.M. et al. | 2004
- 19
-
Cat-CVD (hot-wire CVD): how different from PECVD in preparing amorphous siliconMatsumura, Hideki et al. | 2004
- 27
-
The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley-Rideal mechanismKessels, W.M.M. et al. | 2004
- 32
-
Simulation of the growth dynamics of amorphous and microcrystalline siliconBailat, J. et al. | 2004
- 37
-
The growth kinetics of silicon nitride deposited from the SiH4-N2 reactant mixture in a remote plasmaKessels, W.M.M. et al. | 2004
- 42
-
Preparation of microcrystalline silicon films at ultra high-rate of 10 nm-s using high-density plasmaNiikura, Chisato et al. | 2004
- 47
-
Fabrication of hydrogenated amorphous silicon films exibiting higher stability against light soakingShimizu, Satoshi et al. | 2004
- 51
-
Trapping of plasma produced nanocrystalline Si particles on a low temperature substrateChaâbane, Nihed et al. | 2004
- 56
-
Growth mechanism of microcrystalline silicon at high pressure conditionsRath, J.K. et al. | 2004
- 61
-
Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire-ECR plasma processesRing, Matthew A. et al. | 2004
- 65
-
Catalytic decomposition of HCN on heated W surfaces to produce CN radicalsUmemoto, Hironobu et al. | 2004
- 70
-
Hydrogen effusion from highly-ordered near-stoichiometric a-SiC:HCamargo, S.S. et al. | 2004
- 76
-
Deposition and characterization of silicon oxynitride for integrated optical applicationsAlayo, M.I. et al. | 2004
- 81
-
Fabrication and characterization of thin films of PbI2 for medical imagingCondeles, J.F. et al. | 2004
- 86
-
Contribution of plasma generated nanocrystals to the growth of microcrystalline silicon thin filmsKasouit, S. et al. | 2004
- 91
-
Low frequency plasma deposition and characterization of Si1-xGex:H,F filmsAmbrosio, R. et al. | 2004
- 97
-
Nucleation mechanism of microcrystalline silicon from the amorphous phaseFujiwara, Hiroyuki et al. | 2004
- 102
-
The mutual exclusion of luminescence and transport in nanocrystalline silicon networksBalberg, I. et al. | 2004
- 106
-
p- and n-type microcrystalline Si1-xCx fabricated by plasma CVD with 40.68-MHz excitation sourceToyama, T. et al. | 2004
- 110
-
Microcrystalline silicon growth in the presence of dopants: effect of high growth temperaturesGordijn, A. et al. | 2004
- 115
-
Disorder-induced nucleation in the nanocrystalline silicon film growth from chlorinated materials by rf plasma-enhanced chemical vapor depositionShirai, Hajime et al. | 2004
- 119
-
Nano-crystalline Si1-xCx:H thin films deposited by PECVD for SiC-on-insulator applicationForhan, N.A.E. et al. | 2004
- 123
-
Preparation of wide gap and low resistive hetero-structured SiCX films as wide gap window of solar cellsItoh, T. et al. | 2004
- 127
-
Aluminum-induced crystallization of amorphous silicon: preparation effect on growth kineticsSchneider, J. et al. | 2004
- 131
-
The constrained growth of uniform nc-Si grains from a-SiNx-a-Si:H-a-SiNx: mechanism and experimentsChen, Kai et al. | 2004
- 135
-
Investigation of nc-Si inclusions in multilayer a-Si:H films obtained using the layer by layer techniqueGudovskikh, A.S. et al. | 2004
- 139
-
Investigation of nanostructured porous silicon by Raman spectroscopy and atomic force microscopyAbramof, P.G. et al. | 2004
- 143
-
Excimer laser crystallized phosphorous-doped polycrystalline siliconSaleh, R. et al. | 2004
- 147
-
Deposition and properties of microcrystalline silicon from chlorosilane precursor gasesBeyer, W. et al. | 2004
- 151
-
Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinityRayner, G.B. et al. | 2004
- 155
-
Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculationsLucovsky, G. et al. | 2004
- 159
-
Infrared studies combined with hydrogen effusion experiments on nanostructured porous siliconKoropecki, R.R. et al. | 2004
- 163
-
Deposition of microcrystalline silicon-carbon alloys in low power regimeAmbrosone, G. et al. | 2004
- 168
-
Defects and structure of hydrogenated microcrystalline silicon films deposited by different techniquesNeto, A.L.B. et al. | 2004
- 173
-
Deposition of high crystallinity poly-Si films on glass substrate and fabrication of high mobility bottom-gate TFTLee, J.W. et al. | 2004
- 178
-
Polycrystalline silicon obtained by gold metal induced crystallizationPereira, L. et al. | 2004
- 183
-
Role of the rf frequency on the structure and composition of polymorphous silicon filmsÁguas, H. et al. | 2004
- 188
-
The diphasic nc-Si-a-Si:H thin film with improved medium-range orderZhang, S. et al. | 2004
- 192
-
Laser-induced phase transformation in p-doped nanocrystalline silicon thin filmsConcari, S.B. et al. | 2004
- 197
-
SixGe1-x films and heterojunctions produced by epitaxial crystallization of a-SixGe1-x alloys on GaAsDondeo, F. et al. | 2004
- 201
-
EXAFS and semiconducting amorphous systemsDalba, G. et al. | 2004
- 206
-
Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniquesRaniero, L. et al. | 2004
- 211
-
Density distribution of gap states in extremely thin a-Si:H layers on crystalline silicon wafersSchmidt, M. et al. | 2004
- 215
-
Femtosecond Bragg switching in opal-a-nc-Si photonic crystalsMazurenko, Dmitry A. et al. | 2004
- 218
-
Theory of growth of amorphous semiconductorsBarrio, R.A. et al. | 2004
- 222
-
Temperature dependence of the optical absorption coefficient of microcrystalline siliconPoruba, A. et al. | 2004
- 228
-
Comparison of AC and DC constant photocurrent methods for determination of defect densitiesMain, C. et al. | 2004
- 232
-
Microstructure characterization of plasma-grown a-Si:H and related materials by effusion of implanted heliumBeyer, W. et al. | 2004
- 236
-
Correlation between plasma chemistry, microstructure and electronic properties of Si:H thin films prepared with hydrogen dilutionChaudhuri, Partha et al. | 2004
- 240
-
X-ray spectroscopy of the valence band electronic structure in high-deposition-rate a-Si:HBelin-Ferré, E. et al. | 2004
- 244
-
Optical spectroscopy of the density of gap states in ETP-deposited a-Si:HWillekens, J. et al. | 2004
- 249
-
In-guide measurement of the infra red absorption variation induced in hydrogenated amorphous silicon by visible radiationCantore, F. et al. | 2004
- 254
-
Polarization effects in the calculation of N1s binding energies of carbon-nitrogen moleculesCarvalho, A.C.M. et al. | 2004
- 258
-
Amorphous alloys of C0.5Si0.5, Si0.5Ge0.5 and In0.5Se0.5: atomic topologyPeña, E.Y. et al. | 2004
- 262
-
An electron-spin-resonance study of laser crystallized polycrystalline siliconBrendel, K. et al. | 2004
- 266
-
Variations in optical reflectivity in the semiconductor-metal phase transition of vanadium dioxideIlinski, A. et al. | 2004
- 269
-
Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE techniquePrutskij, T. et al. | 2004
- 273
-
Stoichiometry unbalance and photoluminescence emission in Ga1-XAsX films prepared by flash evaporationDias da Silva, J.H. et al. | 2004
- 278
-
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLEDAcierno, Domenico et al. | 2004
- 283
-
Comparative analysis of different preparation methods of chalcogenide glasses: molecular dynamics structure simulationsHegedüs, J. et al. | 2004
- 287
-
Formation of microcrystalline silicon at low temperatures and role of hydrogenKocka, J. et al. | 2004
- 291
-
Stability of deuterated amorphous silicon solar cellsMunyeme, G. et al. | 2004
- 295
-
Influence of laser crystallization on the hydrogen density-of-states distributionNickel, N.H. et al. | 2004
- 299
-
On the reversibility of hydrogen effects on the properties of amorphous silicon carbideda Silva, Cesar R.S. et al. | 2004
- 303
-
Model of electronic transport in microcrystalline silicon and its use for prediction of device performanceFejfar, A. et al. | 2004
- 310
-
New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1-f noise in a-Si:HBakker, J.P.R. et al. | 2004
- 314
-
Photoconductivity of a-Si:H and a-Ge:H: influence of potential fluctuationsShimakawa, K. et al. | 2004
- 318
-
Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structureWu, Liangcai et al. | 2004
- 322
-
Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulationsSchmidt, J.A. et al. | 2004
- 326
-
Strong field charge transport in MIS structures based on low-K carbon filmsZuniga, C. et al. | 2004
- 331
-
Hopping mechanism of electric transport in intrinsic and p-doped nanocrystalline silicon thin filmsConcari, S.B. et al. | 2004
- 336
-
Study of transport, trapping and recombination mechanisms in microcrystalline silicon by transient photoconductivityVanderhaghen, R. et al. | 2004
- 341
-
An extended model for the mobility edge carrier transportOkamoto, Hiroaki et al. | 2004
- 345
-
Optoelectronic characterization of a-SIC:H stacked devicesLouro, P. et al. | 2004
- 349
-
High-field transport in amorphous carbon and carbon nitride filmsKumar, Sushil et al. | 2004
- 353
-
Photogenerated carriers in (micro)c-Si:H-a-Si:H multi-layersJuska, G. et al. | 2004
- 357
-
A hydrogen-related defect and the Staebler-Wronski effect in hydrogenated amorphous siliconSu, T. et al. | 2004
- 361
-
Photoinduced structural instability around the Si-H bond in undoped a-Si:H and related wide-gap alloysOheda, Hidetoshi et al. | 2004
- 365
-
A change of photoinduced dilation of a-Si:H by cyanide treatmentSobajima, Y. et al. | 2004
- 369
-
Effects of grain size and plasma-induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTsKasouit, S. et al. | 2004
- 374
-
The Staebler-Wronski effect in amorphous germaniumWhitaker, J. et al. | 2004
- 378
-
Creation of metastable defects in microcrystalline silicon films by keV electron irradiationChukichev, M.V. et al. | 2004
- 382
-
Novel network control in hydrogenated amorphous silicon by molecular beam deposition methodMatsuki, Nobuyuki et al. | 2004
- 386
-
Influence of light-soaking and annealing on electron and hole mobility-lifetime products in a-Si:HMorgado, E. et al. | 2004
- 390
-
Investigation of bandgap states using the modulated photocurrent technique in both high and low frequency regimesKleider, J.P. et al. | 2004
- 400
-
Vacancy-like defects in a-Si: a first principles studyMiranda, C.R. et al. | 2004
- 403
-
Post hydrogenation effect by hot wire method on poly-crystalline silicon based devicesShimizu, Kousaku et al. | 2004
- 408
-
Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS modelAarts, I.M.P. et al. | 2004
- 412
-
Density-functional calculation of hyperfine interaction constants of dangling bond and weak bond in GeN and SiN filmsYokomichi, H. et al. | 2004
- 416
-
Atomic topology and optical properties of amorphous porous silicon, ap-SiLoustau, Emilye R.L. et al. | 2004
- 421
-
Aging effects in microcrystalline silicon films studied by transient photoconductivitySmirnov, V. et al. | 2004
- 425
-
Small bond angles in amorphous silicon: are they a new type of defect?Kugler, S. et al. | 2004
- 430
-
Post-growth annealing effects in compensated (micro)c-Si:H samplesDussan, A. et al. | 2004
- 434
-
The nature of dangling bond recombination in (micro)c-Si:HBoehme, Christoph et al. | 2004
- 440
-
Electroluminescence from amorphous-crystalline silicon heterostructuresBresler, M.S. et al. | 2004
- 444
-
Photoluminescence studies of a-Si:H-c-Si-heterojunction solar cellsTardon, S. et al. | 2004
- 448
-
Comparison between light emission from Si-SiNX and Si-SiO2 multilayers: role of interface statesChen, Kunji et al. | 2004
- 452
-
Light-induced effects on low energy photoluminescence in a-Si:H investigated by frequency-resolved spectroscopyOgihara, C. et al. | 2004
- 456
-
Coexistence of geminate and non-geminate recombination in a-Si:H and a-Ge:H observed by quadrature frequency resolved spectroscopyAoki, T. et al. | 2004
- 460
-
Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulsesNiehus, M. et al. | 2004
- 465
-
Photoluminescence in microcrystalline silicon films grown from argon diluted silaneYoon, Jong-Hwan et al. | 2004
- 469
-
Photoluminescence of a-GeN alloys doped with different rare-earth ionsRibeiro, C.T.M. et al. | 2004
- 473
-
Photon and electron excitation of rare-earth-doped amorphous SiN filmsZanatta, A.R. et al. | 2004
- 477
-
Effects of proton irradiation on the photoelectronic properties of microcrystalline siliconBrüggemann, R. et al. | 2004
- 481
-
The change of photoluminescence characteristics of amorphous carbon films due to hydrogen dilutionXu, Jun et al. | 2004
- 486
-
Structural properties of amorphous carbon nitride films prepared by ion beam assisted depositionFerlauto, A.S. et al. | 2004
- 490
-
Self-sustained bridges of a-SiC:H films obtained by PECVD at low temperatures for MEMS applicationsCarreño, M.N.P. et al. | 2004
- 496
-
Specific statistical features of surface enhanced Raman scattering (SERS) spectra of graphitePócsik, I. et al. | 2004
- 499
-
Thermal expansion dependence on the sp2 concentration of amorphous carbon and carbon nitrideChampi, A. et al. | 2004
- 503
-
Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructureCapote, G. et al. | 2004
- 509
-
Fabrication of amorphous boron-carbon-nitrogen films by hot-wire CVDYokomichi, H. et al. | 2004
- 513
-
Amorphizing non-cubic structures of carbon. The case of rhombohedral and hexagonal crystalline supercellsRomero, C. et al. | 2004
- 517
-
Microstructure characterization in dc sputtered a-SiC:H films by inert gas effusion measurementsSaleh, R. et al. | 2004
- 521
-
Band gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor depositionTabata, A. et al. | 2004
- 525
-
Amorphous hydrogenated carbon-nitride films prepared by RF-PECVD in methane-nitrogen atmospheresMotta, E.F. et al. | 2004
- 530
-
Characterization of silicon carbide thin films prepared by VHF-PECVD technologyZhang, S. et al. | 2004
- 534
-
Two-photon optical absorption in amorphous materialsTanaka, Keiji et al. | 2004
- 539
-
Real-time in situ measurements of photoinduced volume changes in chalcogenide glassesIkeda, Y. et al. | 2004
- 543
-
Ab initio theory calculations of the electronic structure of nc-As2S3 and GeS2: an intrinsic mechanism for reversible photo-darkeningMowrer, T. et al. | 2004
- 548
-
Acceleration of photodarkening under dc electric field in amorphous As2Se3 filmsShimakawa, K. et al. | 2004
- 552
-
Local structure resulting from photo and thermal diffusion of Ag in Ge-Se thin filmsMitkova, M. et al. | 2004
- 557
-
Photo-induced volume changes in selenium. Tight-binding molecular dynamics studyHegedüs, J. et al. | 2004
- 561
-
Photo-induced transformations in chalcogenide nanocomposite layersKikineshi, A. et al. | 2004
- 565
-
Crystallization behavior and structure of amorphous Ge15Te85 and Ge20Te80 alloysHoyer, W. et al. | 2004
- 569
-
Density of states in the mobility gap of stabilized a-Se from electron time-of-flight photocurrent analysisKoughia, K.V. et al. | 2004
- 574
-
Structural and photostructural properties of chalcogenide glassesNelson, C.B. et al. | 2004
- 579
-
Composition dependence of diffusion in liquid silver chalcogenidesAniya, M. et al. | 2004
- 582
-
AES study of ion-selective membranes based on chalcogenide glassesTomova, R. et al. | 2004
- 586
-
The electronic structure of oligothiophenesdos Santos, M.C. et al. | 2004
- 590
-
Electrical properties of polymeric light-emitting diodesSantos, L.F. et al. | 2004
- 595
-
Pentacene thin film transistors on large area compatible gate dielectricsKnipp, D. et al. | 2004
- 599
-
Electrical characterization of ITO-CuPc-Al diodes using temperature dependent capacitance spectroscopy and I-V measurementsReis, F.T. et al. | 2004
- 603
-
Charge carrier mobility in doped disordered organic semiconductorsArkhipov, V.I. et al. | 2004
- 607
-
Localized state effects in polymer thin film transistorsStreet, R.A. et al. | 2004
- 612
-
Defect structural characterization of organic polymer layersOsiele, O.M. et al. | 2004
- 617
-
Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterizationPuigdollers, J. et al. | 2004
- 622
-
Electrically detected magnetic resonance of organic and polymeric light emitting diodesCastro, F.A. et al. | 2004
- 626
-
Thermally stimulated luminescence versus thermally stimulated current in organic semiconductorsArkhipov, V.I. et al. | 2004
- 630
-
Properties of ITO films deposited by plasma enhanced RTE on unheated polymer sheets - dependence on rf electrode distance from substratesNunes de Carvalho, C. et al. | 2004
- 634
-
Thin films of synthetic melaninDezidério, S.N. et al. | 2004
- 639
-
Basic efficiency limits, recent experimental results and novel light-trapping schemes in a-Si:H, (micro)c-Si:H and 5micromorph tandem' solar cellsShah, Arvind V. et al. | 2004
- 646
-
Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performanceMatsui, Takuya et al. | 2004
- 651
-
Growth and properties of amorphous Ge:H solar cellsZhu, Jianhua et al. | 2004
- 655
-
Tandem solar cells deposited using hot-wire chemical vapor depositionvan Veen, M.K. et al. | 2004
- 659
-
Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVDFonrodona, M. et al. | 2004
- 663
-
17% efficiency heterostructure solar cell based on p-type crystalline siliconTucci, M. et al. | 2004
- 668
-
Helium versus hydrogen dilution in the optimization of polymorphous silicon solar cellsTchakarov, S. et al. | 2004
- 673
-
Study of enhanced light scattering in microcrystalline silicon solar cellsKrc, J. et al. | 2004
- 677
-
Calculation of the position-dependent inner collection efficiency in PIN solar cells using an electrical-optical modelDutta, U. et al. | 2004
- 682
-
Crystal growth of polycrystalline silicon thin films for solar cells evaluated by scanning probe microscopyMuhida, R. et al. | 2004
- 686
-
Modeling a-Si:H p-i-n solar cells with the defect pool modelKlimovsky, E. et al. | 2004
- 690
-
Argon dilution of silane as an alternative to hydrogen dilution for stable and high efficiency silicon thin films solar cellsChaudhuri, P. et al. | 2004
- 694
-
Optimization of protocrystalline silicon p-type layers for amorphous silicon n-i-p solar cellsFerreira, G.M. et al. | 2004
- 698
-
Light-soaking stability of silicon thin film solar cells using alternately hydrogenated dilution methodIto, M. et al. | 2004
- 702
-
Recombination in (micro)c-Si:H pin solar cellsLips, K. et al. | 2004
- 706
-
Silicon heterojunction solar cells with microcrystalline emitterSummonte, Caterina et al. | 2004
- 710
-
Digital-lithographic processing for thin-film transistor array fabricationWong, William S. et al. | 2004
- 715
-
Fusion of a-Si:H sensor technology with microfluidic bioanalytical devicesKamei, Toshihiro et al. | 2004
- 720
-
Evolution of nanocrystalline silicon thin film transistor channel layersCheng, I.-Chun et al. | 2004
- 725
-
a-Si:H alloy for stress sensor applicationCaputo, D. et al. | 2004
- 729
-
A novel low noise hydrogenated amorphous silicon pixel detectorMoraes, D. et al. | 2004
- 732
-
Field-effect mobility of amorphous silicon thin-film transistors under strainGleskova, H. et al. | 2004
- 736
-
High voltage photoconductive switches of amorphous silicon for electroactive polymer actuatorsLacour, S.P. et al. | 2004
- 740
-
High mobility top-gate thin film transistors fabricated with poly-Si1-xGex thin films on glass substrateZhang, J.J. et al. | 2004
- 744
-
IR bolometers based on amorphous silicon germanium alloysGarcía, M. et al. | 2004
- 749
-
UV-visible sensors based on polymorphous siliconGuedj, C. et al. | 2004
- 754
-
Optically addressed read-write device based on tandem heterostructureVieira, M. et al. | 2004
- 758
-
Thin film transistors on large single crystalline regions of silicon induced by cw laser crystallizationSaboundji, A. et al. | 2004
- 762
-
Amorphous silicon junction field-effect transistor with low pinch-off voltage for analog applicationsCaputo, D. et al. | 2004
- 766
-
Modeling of reverse bias dark currents in pin structures using amorphous and polymorphous siliconTchakarov, S. et al. | 2004
- 772
-
Dynamic properties of ultraviolet sensitive detectorsStiebig, H. et al. | 2004
- 776
-
Bias enhanced sensitivity in amorphous-porous silicon heterojunction gas sensorsTucci, M. et al. | 2004
- 780
-
Study of capacitance in hydrogenated amorphous silicon phototransistors for imaging arraysTucci, M. et al. | 2004
- 784
-
Microcrystalline silicon p-i-n photodetectors for telecommunications and photovoltaic applicationsSummonte, C. et al. | 2004
- 788
-
Membranes of SiOxNy with 3D topography formed by PECVD for MEMS applicationsLopes, A.T. et al. | 2004
- 793
-
Novel micro interferometer for length measurementsStiebig, H. et al. | 2004
- 797
-
Properties of a-Si:H TFTs using silicon carbonitride as dielectricLavareda, G. et al. | 2004
- 802
-
High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurementsSugawara, Takuya et al. | 2004
- 806
-
High field-effect mobility zinc oxide thin film transistors produced at room temperatureFortunato, E. et al. | 2004
- 810
-
Effect of an interfacial oxide layer in the annealing behaviour of Au-a-Si:H MIS photodiodesÁguas, H. et al. | 2004
- 814
-
Degradation of particle detectors based on a-Si:H by 1.5 Mev He4 and 1 MeV protonsSchwarz, R. et al. | 2004
- 819
-
Author Index| 2004
- 830
-
Subject Index| 2004
-
Contents (+ ContentsDirect on the final page)| 2004
-
ForewordChambouleyron, Ivan et al. | 2004
-
Editorial board| 2004