Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAs (English)
- New search for: Geka, Hirotaka
- New search for: Geka, Hirotaka
- New search for: Okamoto, Atsushi
- New search for: Yamada, Satoshi
- New search for: Goto, Hiromasa
- New search for: Yoshida, Kazuo
- New search for: Shibasaki, Ichiro
In:
Journal of crystal growth
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301
; 152-157
;
2007
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ISSN:
- Article (Journal) / Print
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Title:Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAs
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Contributors:Geka, Hirotaka ( author ) / Okamoto, Atsushi / Yamada, Satoshi / Goto, Hiromasa / Yoshida, Kazuo / Shibasaki, Ichiro
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Published in:Journal of crystal growth ; 301 ; 152-157
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2007
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 38.31 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Classification:
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Source:
Table of contents – Volume 301
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Preface| 2007
- 4
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Controlling electronic properties of epitaxial nanocomposites of dissimilar materialsHanson, M.P. / Bank, S.R. / Zide, J.M.O. / Zimmerman, J.D. / Gossard, A.C. et al. | 2007
- 10
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Recent progress in nanostructure fabrication using MBEPloog, Klaus H. et al. | 2006
- 16
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Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffractionTakahasi, M. / Mizuki, J. et al. | 2006
- 22
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Structure transition between two GaAs(001)-c(4x4) surface reconstructions in As4 fluxArai, T. / Suzuki, M. / Ueno, Y. / Okabayashi, J. / Yoshino, J. et al. | 2007
- 22
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Structure transition between two GaAs(001)-c(4×4) surface reconstructions in As4 fluxArai, T. / Suzuki, M. / Ueno, Y. / Okabayashi, J. / Yoshino, J. et al. | 2006
- 26
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Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning methodIsomura, N. / Tsukamoto, S. / Iizuka, K. / Arakawa, Y. et al. | 2006
- 30
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Growth simulation of fish-like pit pattern on GaAs(110)Ishii, A. / Oda, Y. et al. | 2007
- 34
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Atomically controlled doping of nitrogen on GaAs(001) surfacesShimizu, N. / Inoue, T. / Kita, T. / Wada, O. et al. | 2006
- 38
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RHEED metrology of Stranski–Krastanov quantum dotsFeltrin, A. / Freundlich, A. et al. | 2007
- 42
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Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrateNaritsuka, Shigeya / Matsuoka, Sota / Kondo, Toshiyuki / Saitoh, Koji / Suzuki, Takashi / Yamamoto, Yo / Maruyama, Takahiro et al. | 2007
- 47
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Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscopeGomyo, A. / Ohkouchi, S. / Kawamura, Y. et al. | 2006
- 50
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Endotaxy of MnSb into GaSbBraun, Wolfgang / Trampert, Achim / Kaganer, Vladimir M. / Jenichen, Bernd / Satapathy, Dillip K. / Ploog, Klaus H. et al. | 2006
- 54
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Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. / Thibado, P.M. / Awo-Affouda, C. / Moore, R. / LaBella, V.P. et al. | 2007
- 58
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Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrixSemenov, Alexey / Lyublinskaya, Olga G. / Solov’ev, Victor A. / Meltser, Boris Ya. / Ivanov, Sergey V. et al. | 2006
- 62
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A simple approach to temperature dependence of strain energy: Application to GaN-based semiconductorsIto, Tomonori / Araki, Tatsuya / Akiyama, Toru / Nakamura, Kohji et al. | 2006
- 67
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Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sourcesSawada, M. / Sawadaishi, M. / Yamamoto, H. / Arai, M. / Honda, T. et al. | 2006
- 71
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In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxyCordier, Y. / Baron, N. / Semond, F. / Massies, J. / Binetti, M. / Henninger, B. / Besendahl, M. / Zettler, T. et al. | 2006
- 75
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Ab initio-based approach on initial growth kinetics of GaN on GaN (001)Kangawa, Y. / Matsuo, Y. / Akiyama, T. / Ito, T. / Shiraishi, K. / Kakimoto, K. et al. | 2006
- 79
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Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurementVignaud, D. / Mollot, F. et al. | 2006
- 84
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P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBESoubervielle-Montalvo, C. / Hernández, I.C. / Sheldon, M. / Gorbatchev, A.Yu. / Rodríguez, A.G. / de Anda, F. / Zamora-Peredo, L. / Méndez-García, V.H. et al. | 2007
- 88
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Substrate temperature measurement using a commercial band-edge detection systemFarrer, I. / Harris, J.J. / Thomson, R. / Barlett, D. / Taylor, C.A. / Ritchie, D.A. et al. | 2007
- 93
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Influence of interface interruption on spin relaxation in GaAs (110) quantum wellsLiu, L.S. / Wang, W.X. / Li, Z.H. / Liu, B.L. / Zhao, H.M. / Wang, J. / Gao, H.C. / Jiang, Z.W. / Liu, S. / Chen, H. et al. | 2006
- 97
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Imaging of subbands in InAs/GaSb double quantum wells by low-temperature scanning tunneling spectroscopySuzuki, K. / Kanisawa, K. / Perraud, S. / Ueki, M. / Takashina, K. / Hirayama, Y. et al. | 2007
- 101
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Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. / Liu, S.W. / Xiao, Min / Thibado, P.M. et al. | 2006
- 105
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Thermal imaging of wafer temperature in MBE using a digital cameraJackson, A.W. / Gossard, A.C. et al. | 2007
- 109
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MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelengthFujiwara, A. / Krishnamurthy, D. / Matsumoto, T. / Hasegawa, S. / Asahi, H. et al. | 2006
- 113
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Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBEOhnishi, K. / Kanda, T. / Kiriyama, H. / Kajikawa, Y. et al. | 2006
- 117
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Thallium incorporation during TlInAs growth by low-temperature MBETakushima, M. / Kobayashi, N. / Yamashita, Y. / Kajikawa, Y. / Satou, Y. / Tanaka, Y. / Sumida, N. et al. | 2006
- 121
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Temperature dependence of Bi behavior in MBE growth of InGaAs/InPFeng, Gan / Oe, Kunishige / Yoshimoto, Masahiro et al. | 2007
- 125
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Optimization of GaInNAs(Sb)-GaAs quantum wells at 1.3– grown by molecular beam epitaxyNi, H.Q. et al. | 2007
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3- Formula Not Shown grown by molecular beam epitaxyNi, H. Q. / Niu, Z. C. / Fang, Z. D. / Huang, S. S. / Zhang, S. Y. / Wu, D. H. / Shun, Z. / Han, Q. / Wu, R. H. et al. | 2007
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 micrometer grown by molecular beam epitaxyNi, H.Q. / Niu, Z.C. / Fang, Z.D. / Huang, S.S. / Zhang, S.Y. / Wu, D.H. / Shun, Z. / Han, Q. / Wu, R.H. et al. | 2007
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– grown by molecular beam epitaxyNi, H.Q. / Niu, Z.C. / Fang, Z.D. / Huang, S.S. / Zhang, S.Y. / Wu, D.H. / Shun, Z. / Han, Q. / Wu, R.H. et al. | 2006
- 129
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Key issues associated with low threshold current density for InP-based quantum cascade lasersLi, A.Z. / Li, H. / Xu, G.Y. / Zhang, Y.G. / Lin, C. / Zhu, C. / Wei, L. / Li, Y.Y. et al. | 2007
- 134
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InAsPSb quaternary alloy grown by gas source molecular beam epitaxyTsai, Gene / Wang, De-Lun / Wu, Chia-En / Wu, Chen-Jun / Lin, Yan-Ting / Lin, Hao-Hsiung et al. | 2006
- 139
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Development of GaAs-based MOSFET using molecular beam epitaxyDroopad, Ravi / Rajagopalan, Karthik / Abrokwah, Jon / Adams, Liz / England, Nate / Uebelhoer, Dave / Fejes, Peter / Zurcher, Peter / Passlack, Matthias et al. | 2006
- 145
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Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAsGerl, C. / Bauer, J. / Wegscheider, W. et al. | 2006
- 148
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Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxyPerraud, Simon / Kanisawa, Kiyoshi / Wang, Zhao-Zhong / Hirayama, Yoshiro et al. | 2007
- 152
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Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAsGeka, Hirotaka / Okamoto, Atsushi / Yamada, Satoshi / Goto, Hiromasa / Yoshida, Kazuo / Shibasaki, Ichiro et al. | 2007
- 158
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Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBEHey, R. / Trampert, A. / Jahn, U. / Couto, O.D.D. Jr. / Santos, P. et al. | 2007
- 163
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Growth of GaAs with orientation-patterned structures for nonlinear opticsYu, Xiaojun / Scaccabarozzi, Luigi / Lin, Angie C. / Fejer, Martin M. / Harris, James S. et al. | 2007
- 168
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Structural and optical studies of (AlAs)m/(GaAs)n type-I ultra short-period superlattices with fractional monolayerFujii, Kensuke / Tsurumachi, Noriaki / Miyagawa, Hayato / Ueji, Rintaro / Itoh, Hiroshi / Nakanishi, Shunsuke / Akiyama, Hidefumi / Koshiba, Shyun et al. | 2007
- 172
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on GaAs substratesKitada, Takahiro / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2006
- 172
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs-GaAs superlattices on GaAs substratesKitada, Takahiro et al. | 2007
- 172
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on Formula Not Shown GaAs substratesKitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 2007
- 177
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Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxyMozume, T. / Kasai, J. / Nagase, M. / Simoyama, T. / Ishikawa, H. et al. | 2006
- 181
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Buffer influence on AlSb/InAs/AlSb quantum wellsLi, Zhi Hua / Wang, Wen Xin / Liu, Lin Sheng / Gao, Han Chao / Jiang, Zhong Wei / Zhou, Jun Ming / Chen, Hong et al. | 2007
- 185
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Negative and positive persistent photoconductivity effects in AlxGa1−xAsySb1−y/InAs quantum wellsIshida, S. / Fujimoto, A. / Oto, K. / Araki, M. / Shibasaki, I. et al. | 2007
- 190
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Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxyYoshiba, Ippei / Iwai, Takayuki / Uehara, Takahiro / Horikoshi, Yoshiji et al. | 2006
- 194
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High mobility metamorphic AlSb/InAs heterostructures grown on InP substratesDesplanque, L. / Vignaud, D. / Wallart, X. et al. | 2007
- 199
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Low-temperature transport properties in AlxGa1−xAsySb1−y/InAs quantum wells: Well-width dependenceIshida, S. / Fujimoto, A. / Araki, M. / Oto, K. / Okamoto, A. / Shibasaki, I. et al. | 2007
- 203
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Low-temperature growth of InSb(111) on Si(111) substrateMurata, K. / Ahmad, N.B. / Tamura, Y. / Mori, M. / Tatsuyama, C. / Tambo, T. et al. | 2006
- 207
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Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstructionMori, M. / Saito, M. / Yamashita, Y. / Nagashima, K. / Hashimoto, M. / Tatsuyama, C. / Tambo, T. et al. | 2006
- 207
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Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2x2-In surface reconstructionMori, M. / Saito, M. / Yamashita, Y. / Nagashima, K. / Hashimoto, M. / Tatsuyama, C. / Tambo, T. et al. | 2007
- 212
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Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistorsXu, Anhuai / Qi, Ming / Zhu, Fuying / Sun, Hao / Ai, Likun et al. | 2006
- 217
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MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applicationsYarekha, D.A. / Godey, S. / Wallart, X. / Colder, H. / Zaknoune, M. / Mollot, F. et al. | 2007
- 221
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A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beamKim, E.M. / Gotoh, T. / Fukai, M. / Suzuki, T. / Pak, K. et al. | 2006
- 225
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Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxyChavanapranee, Tosaporn / Horikoshi, Yoshiji et al. | 2006
- 230
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Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructuresKim, H.S. / Noh, Y.K. / Kim, M.D. / Kwon, Y.J. / Oh, J.E. / Kim, Y.H. / Lee, J.Y. / Kim, S.G. / Chung, K.S. et al. | 2007
- 235
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Invalidity of graded buffers for InAs grown on GaAs (001)—A comparison between direct and graded-buffer growthJeong, Y. / Choi, H. / Suzuki, T. et al. | 2007
- 240
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Strain compensation for InGaAs–AlAs–AlAsSb coupled double quantum wells by controlling the barrier layer compositionNagase, Masanori / Mozume, Teruo / Simoyama, Takasi / Hasama, Toshifumi / Ishikawa, Hiroshi et al. | 2006
- 244
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Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrateNoh, Y.K. / Park, S.R. / Kim, M.D. / Kwon, Y.J. / Oh, J.E. / Kim, Y.H. / Lee, J.Y. / Kim, S.G. / Chung, K.S. / Kim, T.G. et al. | 2006
- 248
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Modification of InAs quantum dot structure during annealingKaizu, Toshiyuki / Takahasi, Masamitu / Yamaguchi, Koichi / Mizuki, Jun’ichiro et al. | 2006
- 252
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Observation of abrupt first-order metal–insulator transition in Be-doped GaAsKim, Hyun-Tak / Youn, Doo-Hyeb / Chae, Byung-Gyu / Kang, Kwang-Yong / Lim, Yong-Sik et al. | 2006
- 256
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Properties of low-temperature-grown InAs and their changes upon annealingShiba, M. / Ikariyama, R. / Takushima, M. / Kajikawa, Y. et al. | 2006
- 260
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GaMnAs grown on (001), (311)A and (110) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviourWurstbauer, Ursula / Sperl, Matthias / Schuh, Dieter / Bayreuther, Günther / Sadowski, Janusz / Wegscheider, Werner et al. | 2006
- 264
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Effect of substrate temperature on the properties of heavily Mn-doped GaAsLee, H.-J. / Chiba, D. / Matsukura, F. / Ohno, H. et al. | 2006
- 268
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MBE HgCdTe on Si and GaAs substratesHe, L. / Chen, L. / Wu, Y. / Fu, X.L. / Wang, Y.Z. / Wu, J. / Yu, M.F. / Yang, J.R. / Ding, R.J. / Hu, X.N. et al. | 2006
- 273
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Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II–VI compound superlattices on InP substratesNomura, Ichirou / Yamazaki, Tomohiro / Hayashi, Hiroaki / Hayami, Koichi / Kato, Masaki / Kishino, Katsumi et al. | 2006
- 277
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Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxyJo, M. / Endo, M. / Kumano, H. / Suemune, I. et al. | 2007
- 281
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Structural and optical properties of CdSe quantum dots induced by amorphous SeAichele, T. / Robin, I.-C. / Bougerol, C. / André, R. / Tatarenko, S. / Van Tendeloo, G. et al. | 2006
- 285
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Al and N co-doped ZnTe Layers Grown by MBEIchiba, A. / Kobayashi, M. et al. | 2007
- 289
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MBE growth of MgS nanowires characterized using AFMMoug, R.T. / Bradford, C. / Prior, K.A. et al. | 2006
- 293
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Amorphous-Te-mediated self-organization of CdSe/ZnSe nanostructuresMahapatra, S. / Margapoti, E. / Worschech, L. / Forchel, A. / Brunner, K. et al. | 2006
- 297
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Deep emissions of MBE-ZnTe on tilted GaAs substrateShigaura, G. / Ohashi, M. / Ichinohe, Y. / Kanamori, M. / Kimura, Na. / Kimura, No. / Sawada, T. / Suzuki, K. / Imai, K. et al. | 2006
- 301
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Quasi-Stranski–Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxyYang, C.S. / Lai, Y.J. / Chou, W.C. / Chen, D.S. / Wang, J.S. / Chien, K.F. / Shih, Y.T. et al. | 2006
- 306
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Light up-conversion mechanism of ZnSe–ZnTe superlatticesOhashi, M. / Shigaura, G. / Ichinohe, Y. / Kanamori, M. / Chikarayumi, Y. / Sasaki, Y. / Kimura, Na. / Kimura, No. / Sawada, T. / Suzuki, K. et al. | 2006
- 310
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Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxyMahapatra, S. / Kiessling, T. / Margapoti, E. / Astakhov, G.V. / Ossau, W. / Worschech, L. / Forchel, A. / Brunner, K. et al. | 2006
- 315
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Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(001) substrateMyronov, M. / Shiraki, Y. et al. | 2006
- 319
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Island motion triggered by the growth of strain-relaxed SiGe/Si(001) islandsMerdzhanova, T. / Rastelli, A. / Stoffel, M. / Kiravittaya, S. / Schmidt, O.G. et al. | 2006
- 324
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Isotopically controlled self-assembled Ge/Si nanostructuresMoutanabbir, O. / Miyamoto, S. / Fujimoto, A. / Itoh, K.M. et al. | 2006
- 330
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High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterningLee, J. / Wang, K.L. / Chen, H.-T. / Chen, L.-J. et al. | 2007
- 335
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Growth of strain relaxed Si1−yCy films using SOI substratesMurano, Masahiko / Ishihara, Hanae / Yamada, Akira / Konagai, Makoto et al. | 2006
- 339
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Fabrication of Ge channels with extremely high compressive strain and their magnetotransport propertiesSawano, K. / Kunishi, Y. / Toyama, K. / Okamoto, T. / Usami, N. / Nakagawa, K. / Shiraki, Y. et al. | 2006
- 343
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Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBEArimoto, Keisuke / Yamanaka, Junji / Nakagawa, Kiyokazu / Sawano, Kentarou / Shiraki, Yasuhiro / Usami, Noritaka / Nakajima, Kazuo et al. | 2006
- 349
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Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4Suryana, R. / Ichimiya, A. / Nakahara, H. / Saito, Y. et al. | 2006
- 353
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Polarization-induced two-dimensional electron gas at Zn1−xMgxO/ZnO heterointerfaceYano, Mitsuaki / Hashimoto, Kazuyuki / Fujimoto, Kazuya / Koike, Kazuto / Sasa, Shigehiko / Inoue, Masataka / Uetsuji, Yasutomo / Ohnishi, Tomoyuki / Inaba, Katsuhiko et al. | 2006
- 358
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High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxyTampo, H. / Matsubara, K. / Yamada, A. / Shibata, H. / Fons, P. / Yamagata, M. / Kanie, H. / Niki, S. et al. | 2006
- 362
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p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LEDZhang, Z.Z. / Wei, Z.P. / Lu, Y.M. / Shen, D.Z. / Yao, B. / Li, B.H. / Zhao, D.X. / Zhang, J.Y. / Fan, X.W. / Tang, Z.K. et al. | 2006
- 366
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Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxyChauveau, J.-M. / Buell, D.A. / Laügt, M. / Vennéguès, P. / Teisseire-Doninelli, M. / Berard-Bergery, S. / Deparis, C. / Lo, B. / Vinter, B. / Morhain, C. et al. | 2007
- 370
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ZnO epitaxial films grown by flux-modulated RF-MBEHirano, Katsuya / Fujita, Miki / Sasajima, Masanori / Kosaka, Tomohiro / Horikoshi, Yoshiji et al. | 2007
- 373
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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBELu, Y.M. / Wang, X. / Zhang, Z.Z. / Shen, D.Z. / Su, S.C. / Yao, B. / Li, B.H. / Zhang, J.Y. / Zhao, D.X. / Fan, X.W. et al. | 2007
- 378
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A novel approach of using a MBE template for ALD growth of high-κ dielectricsLee, K.Y. / Lee, W.C. / Huang, M.L. / Chang, C.H. / Lee, Y.J. / Chiu, Y.K. / Wu, T.B. / Hong, M. / Kwo, R. et al. | 2007
- 378
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A novel approach of using a MBE template for ALD growth of high-k dielectricsLee, K. Y. / Lee, W. C. / Huang, M. L. / Chang, C. H. / Lee, Y. J. / Chiu, Y. K. / Wu, T. B. / Hong, M. / Kwo, R. et al. | 2007
- 381
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Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxyWatahiki, Tatsuro / Tinkham, Brad P. / Jenichen, Bernd / Braun, Wolfgang / Ploog, Klaus H. et al. | 2006
- 386
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MBE grown high-quality Gd2O3/Si(111) hetero-structureLin, T.D. / Hang, M.C. / Hsu, C.H. / Kwo, J. / Hong, M. et al. | 2006
- 390
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MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaNChang, Y.C. / Lee, Y.J. / Chiu, Y.N. / Lin, T.D. / Wu, S.Y. / Chiu, H.C. / Kwo, J. / Wang, Y.H. / Hong, M. et al. | 2007
- 390
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MBE grown high k dielectrics Ga2O3(Gd2O3) on GaNChang, Y. C. / Lee, Y. J. / Chiu, Y. N. / Lin, T. D. / Wu, S. Y. / Chiu, H. C. / Kwo, J. / Wang, Y. H. / Hong, M. et al. | 2007
- 394
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Characterization of Au thin films deposited on α-Sn(111)-(3×3)/InSb(111)A surfacesKasukabe, Y. / Zhao, X. / Nishida, S. / Fujino, Y. et al. | 2007
- 394
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Characterization of Au thin films deposited on a-Sn(111)-(3x3)/InSb(111)A surfacesKasukabe, Y. / Zhao, X. / Nishida, S. / Fujino, Y. et al. | 2007
- 400
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Structural and transport properties of β-FeSi2 [100] oriented thin film on Si(001) substrateKakemoto, H. / Higuchi, T. / Shibata, H. / Wada, S. / Tsurumi, T. et al. | 2007
- 400
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Structural and transport properties of b-FeSi2 [100] oriented thin film on Si(001) substrateKakemoto, H. / Higuchi, T. / Shibata, H. / Wada, S. / Tsurumi, T. et al. | 2007
- 404
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Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBEShen, X.Q. / Furuta, K. / Nakamura, N. / Matsuhata, H. / Shimizu, M. / Okumura, H. et al. | 2006
- 410
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A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxySuda, J. / Horita, M. / Armitage, R. / Kimoto, T. et al. | 2007
- 414
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Be and Mg co-doping in GaNKawaharazuka, A. / Tanimoto, T. / Nagai, K. / Tanaka, Y. / Horikoshi, Y. et al. | 2006
- 417
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MBE growth of GaN using 15N isotope for nuclear magnetic resonance applicationsNovikov, S.V. / Morris, R.D. / Kent, A.J. / Geen, H.L. / Foxon, C.T. et al. | 2006
- 420
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Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxySawahata, Junji / Seo, Jongwon / Takiguchi, Mikio / Saito, Daisuke / Nemoto, Shinya / Akimoto, Katsuhiro et al. | 2006
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Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE techniqueHonda, Tohru / Egawa, Shinichi / Sugimoto, Koichi / Arai, Masatoshi et al. | 2007
- 429
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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterizationStorm, D.F. / Katzer, D.S. / Roussos, J.A. / Mittereder, J.A. / Bass, R. / Binari, S.C. / Hanser, D. / Preble, E.A. / Evans, K.R. et al. | 2006
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Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBECordier, Y. / Semond, F. / Massies, J. / Leroux, M. / Lorenzini, P. / Chaix, C. et al. | 2007
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Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBEFuruta, K. / Nakamura, N. / Shen, X.Q. / Shimizu, M. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2007
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GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBETang, H. / Bardwell, J.A. / Lapointe, J. / Raymond, S. / Fraser, J. / Haffouz, S. / Rolfe, S. et al. | 2007
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Fabrication of lateral lattice-polarity-inverted GaN heterostructureKatayama, Ryuji / Kuge, Yoshihiro / Kondo, Takashi / Onabe, Kentaro et al. | 2006
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Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substratesNakamura, N. / Furuta, K. / Shen, X.Q. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2006
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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxyLiu, X.Y. / Aggerstam, T. / Jänes, P. / Holmström, P. / Lourdudoss, S. / Thylén, L. / Andersson, T.G. et al. | 2007
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Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxyIwata, Shiro / Nanjo, Yoshiyuki / Okuno, Toshihiro / Kurai, Satoshi / Taguchi, Tsunemasa et al. | 2006
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InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650nm rangeIvanov, Sergey V. / Jmerik, Valentin N. / Shubina, Tatiana V. / Listoshin, Svyatoslav B. / Mizerov, Andrey M. / Sitnikova, Alla A. / Kim, Min-Ho / Koike, Masayoshi / Kim, Bum-Joon / Kop’ev, Pyotr S. et al. | 2006
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Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templatesJmerik, V.N. / Mizerov, A.M. / Shubina, T.V. / Yagovkina, M. / Listoshin, V.B. / Sitnikova, A.A. / Ivanov, S.V. / Kim, M.-H. / Koike, M. / Kim, B.-J. et al. | 2006
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Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBEKomaki, Hironori / Nakamura, Teruyuki / Katayama, Ryuji / Onabe, Kentaro / Ozeki, Masashi / Ikari, Tetsuo et al. | 2006
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MBE growth of GaN on MgO substrateSuzuki, Ryotaro / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2006
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Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAsFoxon, C.T. / Campion, R.P. / Grant, V.A. / Novikov, S.V. / Harris, J.J. / Thomson, R. / Taylor, C. / Barlett, D. et al. | 2007
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Fabrication of GaN dot structure by droplet epitaxy using NH3Maruyama, Takahiro / Otsubo, Hiroaki / Kondo, Toshiyuki / Yamamoto, Yo / Naritsuka, Shigeya et al. | 2006
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Growth of InN nanocolumns by RF-MBENishikawa, S. / Nakao, Y. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2007
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In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxyWang, Xinqiang / Che, Song-Bek / Ishitani, Yoshihiro / Yoshikawa, Akihiko et al. | 2006
- 500
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A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growthHashimoto, A. / Iwao, K. / Isamoto, K. / Yamamoto, A. et al. | 2006
- 504
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Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxyYodo, Tokuo / Shimada, Teruya / Tagawa, Sumito / Harada, Yoshiyuki et al. | 2007
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RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substratesNakamura, T. et al. | 2007