Design of Ternary Neural Network With 3-D Vertical RRAM Array (English)
- New search for: Li, Zhiwei
- New search for: Li, Zhiwei
- New search for: Chen, Pai-Yu
- New search for: Xu, Hui
- New search for: Yu, Shimeng
In:
IEEE transactions on electron devices
;
PP
, 99
; 1-7
-
ISSN:
- Article (Journal) / Print
-
Title:Design of Ternary Neural Network With 3-D Vertical RRAM Array
-
Contributors:
-
Published in:IEEE transactions on electron devices ; PP, 99 ; 1-7
-
Publisher:
- New search for: IEEE
-
Place of publication:New York, NY
-
ISSN:
-
ZDBID:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
- Further information on Basic classification
- New search for: 770/5670
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume PP, Issue 99
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
A U-Shaped Channel SOI-LIGBT With Dual TrenchesZhang, Long et al.
- 1
-
High-Power Millimeter Wave Direct Detection by Glow Discharge DetectorGolan, Aviv et al.
- 1
-
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode AreaSozzi, Giovanna et al.
- 1
-
Electronic Materials, Devices, and Signals in Electrochemical SensorsCui, Yue et al. | 2017
- 1
-
Device Exploration of NanoSheet Transistors for Sub-7-nm Technology NodeJang, Doyoung et al. | 2017
- 1
-
Current Crowding Effect of Equilateral Polygon Emitter TransistorsXu, Xiaobo et al.
- 1
-
Optimization and Measurement of a Smoothly Profiled Horn for a W-Band Gyro-TWAZhang, Liang et al. | 2017
- 1
-
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTsBorga, Matteo et al.
- 1
-
Improving the Electrical Performance of a Quantum Well FET With a Shell Doping Profile by Heterojunction OptimizationKumar, Malkundi Puttaveerappa Vijay et al.
- 1
-
Characteristics of Planar and Conformal Contact GaAs Core-Shell Nanowire Array Solar CellsLim, Cheng Guan et al.
- 1
-
Microplasma Traveling Wave Terahertz AmplifierTabib-Azar, Massood et al.
- 1
-
A High-Consistency Broadband MEMS-Based Electrochemical Seismometer With Integrated Planar MicroelectrodesSun, Zhenyuan et al.
- 1
-
CW Experiments With the EU 1-MW, 170-GHz Industrial Prototype Gyrotron for ITER at KITIoannidis, Zisis C et al.
- 1
-
Low-Loss SOI-LIGBT With Triple Deep-Oxide TrenchesZhang, Long et al. | 2017
- 1
-
Microwave Power System Based on a Combination of Two MagnetronsZhang, Yi et al.
- 1
-
Investigation of Electromigration Degradation Mechanism in Ti/Pt/Au Ohmic Contacts to p-GaAs Under High Current Density StressQiao, Yanbin et al.
- 1
-
Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETsDuan, Meng et al. | 2017
- 1
-
High-Performance GaN-Based LEDs With AZO/ITO Thin Films as Transparent Contact LayersChen, Dan et al.
- 1
-
Voltage Reduction in Organic Light-Emitting Diodes by Sequential Deposition DopingLi, X. M et al. | 2017
- 1
-
High-Performance Carbon Nanotube Complementary Logic With End-Bonded ContactsTang, Jianshi et al.
- 1
-
Design of Ternary Neural Network With 3-D Vertical RRAM ArrayLi, Zhiwei et al. | 2017
- 1
-
Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide MemristorHsu, Chih-Chieh et al.
- 1
-
Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal ConductivityBalanethiram, Suresh et al.
- 1
-
Tolerance Studies on an Inverse Magnetron Injection Gun for a 2-MW 170-GHz Coaxial-Cavity GyrotronRuess, Sebastian et al.
- 1
-
A Predictive Model for IC Self-Heating Based on Effective Medium and Image Charge Theories and Its Implications for Interconnect and Transistor ReliabilityAhn, Woojin et al.
- 1
-
Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo SimulationsSoligo, Riccardo et al.
- 1
-
Thin Film In0.53Ga0.47As Schottky Diodes for 28.3-THz DetectionHussin, Rozana et al.
- 1
-
Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity StructureSheikhi, Moheb et al.
- 1
-
Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire ChannelsPark, Jun-Young et al.
- 1
-
The Improvement of Subthreshold Slope and Transconductance of p-Type Bulk Si Field-Effect Transistors by Solid-Source DopingKikuchi, Yoshiaki et al.
- 1
-
A Barrier Controlled Charge Plasma-Based TFET With Gate Engineering for Ambipolar Suppression and RF/Linearity Performance ImprovementNigam, Kaushal et al. | 2017
- 1
-
Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge SaturationLv, Yawei et al. | 2017
- 1
-
Memory Performance of a Simple Pr0.7Ca0.3MnO₃-Based Selectorless RRAMKumbhare, P et al.
- 1
-
Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off TechniquesKim, Seong Kwang et al.
- 1
-
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine IncorporationHuang, Yong et al.
- 1
-
First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact ResistanceDixit, Hemant et al. | 2017
- 1
-
A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor With Improved Ambipolar Behavior and RF PerformanceMolaei Imenabadi, Rouzbeh et al.
- 1
-
Observation of Mode Competition in Operation of a 420 GHz, TE17.4 Second Harmonic Gyrotron With Complex CavityZhao, Qixiang et al.
- 1
-
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETsZagni, Nicolo et al.
- 1
-
In0.53Ga0.47As/InP Trench-Gate Power MOSFET Based on Impact Ionization for Improved Performance: Design and AnalysisSaini, Navneet Kaur et al.
- 1
-
Analysis of Geometrical Design Parameters for High-Energy and High-Current-Density Pseudospark-Sourced Electron Beam EmissionKumar, Niraj et al.
- 1
-
Origin of Dark Current and Detailed Description of Organic Photodiode Operation Under Different Illumination IntensitiesFallahpour, A. H et al. | 2017
- 1
-
High-Performance Nonvolatile Organic Transistor Memory Using Quantum Dots-Based Floating GateHu, Daobing et al.
- 1
-
Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD ModelingChan, C. W et al.
- 1
-
High-Performance GaN-Based LEDs on Si Substrates: The Utility of Ex Situ Low-Temperature AlN Template With Optimal ThicknessWang, Haiyan et al.
- 1
-
Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot SuperlatticeTsai, Yi-Chia et al.
- 1
-
A Planar Junctionless FET Using SiC With Reduced Impact of Interface Traps: Proposal and AnalysisSingh, Jaspreet et al.
- 1
-
Analytical Model for 2DEG Density in Graded MgZnO/ZnO Heterostructures With Cap LayerSingh, Rohit et al.
- 1
-
Band-to-Band Tunneling Diode for Ultralow-Voltage ApplicationsJokinen, Thomas A et al.
- 1
-
Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical SimulationsWei, Jin et al.
- 1
-
Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling HeterojunctionsAmeen, Tarek A et al.
- 1
-
Device Characterization and Design Guideline of Amorphous InGaZnO Junctionless Thin-Film TransistorKim, Sang Min et al.
- 1
-
Spin-Seebeck Temperature SensorsLiao, Tianjun et al. | 2017
- 1
-
Light Extraction Enhancement of GaN-Based Light-Emitting Diodes With Textured Sidewalls and ICP-Transferred Nanohemispherical Backside ReflectorChen, Chun-Yen et al.
- 1
-
Method of Providing the High Cyclotron Harmonic Operation Selectivity in a Gyrotron With a Spatially Developed Operating ModeBandurkin, Ilya V et al.
- 1
-
A Snapback-Free Fast-Switching SOI LIGBT With Polysilicon Regulative Resistance and Trench CathodeHuang, Linhua et al.
- 1
-
Electrothermal Effects on Hot Carrier Injection in n-Type SOI FinFET Under Circuit-Speed BiasZhang, Peng et al.
- 1
-
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET DevicesSchwarz, Mike et al.
- 1
-
High-Power X-Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control LogicLuo, Weijun et al.
- 1
-
A Study on Practically Unlimited Endurance of STT-MRAMKan, Jimmy J et al.
- 1
-
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTsRossetto, I et al. | 2017
- 1
-
Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier TransistorsBejenari, Igor et al.
- 1
-
On the Hardware Implementation of MRAM Physically Unclonable FunctionChen, Yu-Sheng et al.
- 1
-
Design and Fabrication of a High-Power Air-Coupled Capacitive Micromachined Ultrasonic Transducer Array With Concentric Annular CellsNa, Shuai et al.
- 1
-
Reconsideration of Dielectric Breakdown Mechanism of Gate Dielectrics on Basis of Dominant Carrier Change ModelOkada, Kenji et al.
- 1
-
A Vacancy-Interstitial Defect Pair Model for Positive-Bias Temperature Stress-Induced Electron Trapping Transformation in the High-κ Gate n-MOSFETGu, Chenjie et al.
- 1
-
Mechanical Design and Manufacturing of W-Band Sheet Beam KlystronGamzina, Diana et al.
- 1
-
Two-Port-Network-Based Method to Measure Electrical Characteristics of MIS Devices With Ultrathin BarriersBerktold, Rene et al. | 2017
- 1
-
Nanoheat Conduction Performance of Black Phosphorus Field-Effect TransistorNasri, Faouzi et al.
- 1
-
Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin FilmAhn, Hyun Jun et al. | 2017
- 1
-
Design of a Miniaturized On-Chip Bandpass Filter Using Edge-Coupled Resonators for Millimeter-Wave ApplicationsYang, Yang et al.
- 1
-
Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its ModelingDutta, Gourab et al.
- 1
-
DC 30-GHz DPDT Switch Matrix Design in High Resistivity Trap-Rich SOIYu, Bo et al.
- 1
-
SiC BJT Compact DC Model With Continuous-Temperature Scalability From 300 to 773 KTian, Ye et al. | 2017
- 1
-
Backward-Wave Oscillator Operating in Low Magnetic Fields Using a Hybrid-TE₁₁ ModeChipengo, Ushemadzoro et al.
- 1
-
A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector SideLiu, Yan-Juan et al.
- 1
-
Stability of Excitation of Traveling Waves in Gyrotrons With Low-Relativistic Electron BeamsKalynov, Yuriy K et al.
- 1
-
Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical StressWu, Yufei et al.
- 1
-
Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport ApproachPenzin, Oleg et al.
- 1
-
S-Shaped I-V Characteristics of Organic Solar Cells: Solving Mazhari's Lumped-Parameter Equivalent Circuit ModelRomero, Beatriz et al.
- 1
-
A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETsZeng, Zaiping et al.
- 1
-
Compact Modeling of Organic Thin-Film Transistors with Solution Processed Octadecyl Substituted Tetrabenzotriazaporphyrin as an Active LayerJimenez Tejada, Juan A et al. | 2017
- 1
-
Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical PseudopotentialsFang, Jingtian et al. | 2017
- 1
-
CMOS Compatible Electrostatically Formed Nanowire Transistor for Efficient Sensing of TemperatureShimanovich, Klimentiy et al.
- 1
-
A Millimeter-Wave Klystron Upconverter With a Higher Order Mode Output CavityBurt, Graeme et al.
- 1
-
Wideband Power Combining of Four Microfabricated W-Band Traveling-Wave TubesWang, Shaomeng et al.
- 1
-
Simulation Study of 4H-SiC UMOSFET Structure With p⁺-polySi/SiC Shielded RegionWang, Ying et al.
- 1
-
Phase-Change Memory--Towards a Storage-Class MemoryFong, Scott W et al.
- 1
-
Effect of Interface Trap Charges on Performance Variation of Heterogeneous Gate Dielectric Junctionless-TFETGupta, Sarthak et al.
- 1
-
Potentiality of Density-Functional Theory in Analyzing the Devices Containing Graphene-Crystalline Solid Interfaces: A ReviewGhosh, K et al.
- 1
-
Investigation of a Ka-Band High-Power Sheet Beam Relativistic Extended Interaction OscillatorLiu, Zhenbang et al.
- 1
-
Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal CapacitancesPasadas, Francisco et al.
- 1
-
Application Possibility of Mn0.04Cu0.05Zn0.91O in Electronic and Magnetic DevicesDatta, Joydeep et al.
- 1
-
Modeling the Performance of Nano Machined CMOS Transistors for Uncooled IR SensingZviagintsev, Alex et al.
- 1
-
Limitations of the Intrinsic Cutoff Frequency to Correctly Quantify the Speed of Nanoscale TransistorsZhan, Zhen et al. | 2017
- 1
-
Layer-Dependent Thermophotovoltaic Energy Conversion in 0.5-eV GaInAsSb DevicesZhang, Xiao-Long et al.
- 1
-
Numerical Investigation of High-Voltage Partial Buried P/N-Layer SOI LDMOSHu, Yue et al. | 2017
- 1
-
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based BiosensorVerma, Madhulika et al.
- 1
-
Insights Into the Operation of Hyper-FET-Based CircuitsAvedillo, Maria J et al.
- 1
-
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap StatesHe, Hongyu et al.
- 1
-
Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors--Part II: Analysis of Device PropertiesSmith, Anderson D et al. | 2017
- 1
-
Effect of Cavity Ohmic Losses on Efficiency of Low-Power Terahertz GyrotronShcherbinin, Vitalii I et al.
- 1
-
Study of a GaN-Based LED With an Al/AZO Composite Transparent Conductive LayerHsu, Chi-Hsiang et al.
- 1
-
Origin and Optimization of RF Power Handling Limitations in Inline Phase-Change SwitchesEl-Hinnawy, Nabil et al.
- 1
-
High-Performance Single-Electron Transistor Based on Metal-Organic Complex of Thiophene: First Principle StudyAnu et al.
- 1
-
A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic SimulationsNail, Cecile et al.
- 1
-
Impact of La₂O₃/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETsChang, C.-Y et al.
- 1
-
A Coupled Resonator for Highly Tunable and Amplified Mixer/FilterIlyas, Saad et al.
- 1
-
High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap ThicknessHuang, Yu-Shiang et al.
- 1
-
A Trial Experiment on Water-Cooled 1.8-T 50% Duty SolenoidHirshbein, Haim et al.
- 1
-
Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS InvertersChen, ChangDong et al.
- 1
-
Calibration of Bulk Trap-Assisted Tunneling and Shockley-Read-Hall Currents and Impact on InGaAs Tunnel-FETsSmets, Quentin et al.
- 1
-
A Threshold Voltage Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias EffectsGola, Deepti et al.
- 1
-
Comparison for 1/f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFETVodapally, Sindhuri et al.
- 1
-
Infrared Energy Harvesting in Millimeter-Scale GaAs PhotovoltaicsMoon, Eunseong et al.
- 1
-
Extraction of Front- and Rear-Interface Recombination in Silicon Double-Heterojunction Solar Cells by Reverse Bias TransientsBerg, Alexander H et al.
- 1
-
Wafer-Scale Statistical Analysis of Graphene FETs--Part I: Wafer-Scale Fabrication and Yield AnalysisSmith, Anderson D et al. | 2017
- 1
-
An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI TechnologyOmprakash, Anup P et al.
- 1
-
Low-Leakage ESD Power Clamp Design With Adjustable Triggering Voltage for Nanoscale ApplicationsLu, Guangyi et al.
- 1
-
Steep-Switching Germanium Junctionless MOSFET With Reduced OFF-State TunnelingGupta, Manish et al.
- 1
-
Compact Modeling Source-to-Drain Tunneling in Sub-10-nm GAA FinFET With Industry Standard ModelLin, Yen-Kai et al.
- 1
-
Analysis of Atomistic Dopant Variation and Fermi Level Depinning in Nanoscale ContactsShine, Gautam et al. | 2017
- 1
-
Investigation on Self-Adjust Conductivity Modulation SOI-LIGBT Structure (SCM-LIGBT) for Monolithic High-Voltage ICSun, Weifeng et al.
- 1
-
Analysis of a Novel Metal Implant Junctionless Tunnel FET for Better DC and Analog/RF Electrostatic ParametersTirkey, Sukeshni et al.
- 1
-
On the Time-Dependent Transport Mechanism Between Surface Traps and the 2DEG in AlGaN/GaN DevicesLongobardi, Giorgia et al.
- 1
-
Improved Optoelectronic Performance of High-Voltage Ultraviolet Light-Emitting Diodes Through Electrode DesignsTien, Ching-Ho et al.
- 1
-
Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam EpitaxyDas, Subhashis et al.
- 1
-
Analysis of Dark Count Mechanisms of 4H-SiC Ultraviolet Avalanche Photodiodes Working in Geiger ModeYang, Sen et al.
- 1
-
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect TransistorsMemisevic, Elvedin et al. | 2017
- 1
-
Investigation of Frequency-Selective Surfaces for a THz Gyromultiplier Output SystemLi, Xiang et al.
- 1
-
Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics During Set and Reset: Part I--Effective Media ApproximationWoods, Zachary et al.
- 1
-
A Multiscale Modeling of Triple-Heterojunction Tunneling FETsHuang, Jun Z et al. | 2017
- 1
-
Hybrid Oblique-Angle Deposited ITO/Silver Nanowire Transparent Conductive Electrodes for Brighter Light EmittersBaek, Minkyung et al.
- 1
-
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1-xAs nTFETsBordallo, Caio C. M et al.
- 1
-
Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate DepositionWitters, L et al.
- 1
-
CMOS-Compatible Contacts to n-InPGhegin, Elodie et al.
- 1
-
Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal-Oxide-Semiconductor Devices on AlAs/GaAsNguyen, Peter D et al.
- 1
-
Modeling of Differential Power Sensor Based on Seesaw Structure for Microwave Communication ApplicationYi, Zhenxiang et al.
- 1
-
Effects of Liner Thickness on the Reliability of AgTe/TiO₂-Based Threshold Switching DevicesSong, Jeonghwan et al.
- 1
-
Influence of Drain Doping Engineering on the Ambipolar Conduction and High-Frequency Performance of TFETsShaker, Ahmed et al.
- 1
-
Topologically Protected AC Transport Induced by Spin-Orbit Interaction in H-Shaped Silicene NanojunctionSun, Yun-Lei et al.
- 1
-
Optical Gain Depending on Both Size Fluctuations of Quantum Dots and Temperature in InGaAs/GaAs QD-SOAHu, Zhenhua et al.
- 1
-
Parametric Optimum Design of a Graphene-Based Thermionic Energy ConverterZhang, Xin et al.
- 1
-
Small Curvature Sensor Based on Butterfly-Shaped Mach-Zehnder InterferometerZhao, Yong et al.
- 1
-
Physical-Based Analytical Model of Amorphous InGaZnO TFTs Including Deep, Tail, and Free StatesGhittorelli, Matteo et al.
- 1
-
Study of Electronic Switching Between Multiple Backward-Wave Modes in a W-Band Extended Interaction OscillatorBi, Liangjie et al.