Resistance switching memories are memristors (English)
- New search for: Chua, Leon
- New search for: Chua, Leon
In:
Applied Physics A
;
102
, 4
; 765-783
;
2011
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ISSN:
- Article (Journal) / Print
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Title:Resistance switching memories are memristors
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Contributors:Chua, Leon ( author )
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Published in:Applied Physics A ; 102, 4 ; 765-783
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Publisher:
- New search for: Springer-Verlag
- New search for: Springer
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Place of publication:Berlin
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Publication date:2011
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.00 / 33.60 / 53.09
- Further information on Basic classification
- New search for: 020/3475/3485
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Keywords:
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Classification:
BKL: 51.00 Werkstoffkunde: Allgemeines / 33.60 Kondensierte Materie: Allgemeines / 53.09 Werkstoffe der Elektrotechnik Local classification TIB: 020/3475/3485 -
Source:
Table of contents – Volume 102, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 765
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Resistance switching memories are memristorsChua, Leon et al. | 2011
- 785
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Metal/TiO2 interfaces for memristive switchesYang, J. Joshua / Strachan, John Paul / Miao, Feng / Zhang, Min-Xian / Pickett, Matthew D. / Yi, Wei / Ohlberg, Douglas A. A. / Medeiros-Ribeiro, G. / Williams, R. Stanley et al. | 2011
- 791
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Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAMKügeler, Carsten / Rosezin, Roland / Linn, Eike / Bruchhaus, Rainer / Waser, Rainer et al. | 2011
- 811
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Memristive operations demonstrated by gap-type atomic switchesHasegawa, Tsuyoshi / Nayak, Alpana / Ohno, Takeo / Terabe, Kazuya / Tsuruoka, Tohru / Gimzewski, James K. / Aono, Masakazu et al. | 2011
- 817
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Inherent diode isolation in programmable metallization cell resistive memory elementsPuthentheradam, Sarath C. / Schroder, Dieter K. / Kozicki, Michael N. et al. | 2011
- 827
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Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopyLee, Min Hwan / Kim, Kyung Min / Song, Seul Ji / Rha, Sang Ho / Seok, Jun Yeong / Jung, Ji Sim / Kim, Gun Hwan / Yoon, Jung Ho / Hwang, Cheol Seong et al. | 2011
- 835
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Intrinsic resistive switching and memory effects in silicon oxideYao, Jun / Zhong, Lin / Natelson, Douglas / Tour, James M. et al. | 2011
- 841
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Redox driven conductance changes for resistive memoryShoute, Lian C. T. / Pekas, Nikola / Wu, Yiliang / McCreery, Richard L. et al. | 2011
- 851
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Intrinsic constrains on thermally-assisted memristive switchingStrukov, Dmitri B. / Williams, R. Stanley et al. | 2011
- 857
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Synaptic behaviors and modeling of a metal oxide memristive deviceChang, Ting / Jo, Sung-Hyun / Kim, Kuk-Hwan / Sheridan, Patrick / Gaba, Siddharth / Lu, Wei et al. | 2011
- 865
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Artificial cognitive memory—changing from density driven to functionality drivenShi, L. P. / Yi, K. J. / Ramanathan, K. / Zhao, R. / Ning, N. / Ding, D. / Chong, T. C. et al. | 2011
- 877
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Computational investigations into the operating window for memristive devices based on homogeneous ionic motionNoman, Mohammad / Jiang, Wenkan / Salvador, Paul A. / Skowronski, Marek / Bain, James A. et al. | 2011
- 885
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Chaotic memristorDriscoll, T. / Pershin, Y. V. / Basov, D. N. / Di Ventra, M. et al. | 2011
- 891
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Molecular dynamics simulations of oxide memristors: thermal effectsSavel’ev, S. E. / Alexandrov, A. S. / Bratkovsky, A. M. / Williams, R. Stanley et al. | 2011
- 897
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Resistive switching behavior in a Ni–Ag2Se–Ni nanowireLee, N. J. / An, B. H. / Koo, A. Y. / Ji, H. M. / Cho, J. W. / Choi, Y. J. / Kim, Y. K. / Kang, C. J. et al. | 2011
- 901
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A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAMChien, W. C. / Chen, Y. C. / Lai, E. K. / Lee, F. M. / Lin, Y. Y. / Chuang, Alfred T. H. / Chang, K. P. / Yao, Y. D. / Chou, T. H. / Lin, H. M. et al. | 2011
- 909
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Multiscale simulation on electromigration of the oxygen vacancies in metal oxidesJeon, Sang Ho / Son, Won-Joon / Park, Bae Ho / Han, Seungwu et al. | 2011
- 915
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Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cellLong, Shibing / Liu, Qi / Lv, Hangbing / Li, Yingtao / Wang, Yan / Zhang, Sen / Lian, Wentai / Zhang, Kangwei / Wang, Ming / Xie, Hongwei et al. | 2011
- 921
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Engineering of tunnel barrier for highly integrated nonvolatile memory applicationsYou, Hee-Wook / Son, Jung-Woo / Cho, Won-Ju et al. | 2011
- 927
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Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applicationsHuang, Ru / Zhang, Lijie / Gao, Dejin / Pan, Yue / Qin, Shiqiang / Tang, Poren / Cai, Yimao / Wang, Yangyuan et al. | 2011
- 933
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Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structureLee, Dong Uk / Kim, Eun Kyu / Cho, Won-Ju / Kim, Young-Ho et al. | 2011
- 939
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Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructureTian, H. F. / Zhao, Y. G. / Jiang, X. L. / Shi, J. P. / Zhang, H. J. / Sun, J. R. et al. | 2011
- 943
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Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopyMiao, Feng / Ohlberg, Douglas A. A. / Stanley Williams, R. / Lau, Chun Ning et al. | 2011
- 949
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Transport characteristics and surface potential distribution of electrically stressed TiO2 single crystalsKim, Haeri / Kim, Dong-Wook et al. | 2011
- 955
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Nanoscale resistive switches: devices, fabrication and integrationXia, Qiangfei et al. | 2011
- 967
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Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memoryJeong, Hu Young / Kim, Sung Kyu / Lee, Jeong Yong / Choi, Sung-Yool et al. | 2011
- 973
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Feedback write scheme for memristive switching devicesYi, Wei / Perner, Frederick / Qureshi, Muhammad Shakeel / Abdalla, Hisham / Pickett, Matthew D. / Yang, J. Joshua / Zhang, Min-Xian Max / Medeiros-Ribeiro, Gilberto / Williams, R. Stanley et al. | 2011
- 983
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Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cellYoon, Sung-Min / Yang, Shinhyuk / Jung, Soon-Won / Byun, Chun-Won / Ryu, Min-Ki / Cheong, Woo-Seok / Kim, ByeongHoon / Oh, HimChan / Ko Park, Sang-Hee / Hwang, Chi-Sun et al. | 2011
- 991
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Engineering oxide resistive switching materials for memristive device applicationLiu, Lifeng / Chen, Bing / Gao, Bin / Zhang, Feifei / Chen, Yuansha / Liu, Xiaoyan / Wang, Yi / Han, Ruqi / Kang, Jinfeng et al. | 2011
- 997
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Enhanced bipolar resistive switching of HfO2 with a Ti interlayerLee, DooSung / Sung, YongHun / Lee, InGun / Kim, JongGi / Sohn, Hyunchul / Ko, Dae-Hong et al. | 2011
- 1003
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Programming resistive switching memory by a charged capacitorZhang, Sen / Liu, Qi / Wang, Wei / Lv, Hangbing / Zuo, Qingyun / Wang, Yan / Li, Yingtao / Lian, Wentai / Long, Shibing / Wang, Qin et al. | 2011
- 1009
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Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy driftsBae, Yoon Cheol / Lee, Ah Rahm / Kwak, June Sik / Im, Hyunsik / Do, Young Ho / Hong, Jin Pyo et al. | 2011
- 1015
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Performance improvement of Cu x O resistive switching memory by surface modificationLv, Hangbing / Tang, Tingao et al. | 2011
- 1019
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Synaptic behaviors of a single metal–oxide–metal resistive deviceChoi, Sang-Jun / Kim, Guk-Bae / Lee, Kyoobin / Kim, Ki-Hong / Yang, Woo-Young / Cho, Soohaeng / Bae, Hyung-Jin / Seo, Dong-Seok / Kim, Sang-Il / Lee, Kyung-Jin et al. | 2011
- 1027
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Dc current transport behavior in amorphous GeSe filmsJeong, Doo Seok / Park, Goon-Ho / Lim, Hyungkwang / Hwang, Cheol Seong / Lee, Suyoun / Cheong, Byung-ki et al. | 2011
- 1033
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An ionic bottle for high-speed, long-retention memristive devicesStrukov, Dmitri B. / Williams, R. Stanley et al. | 2011