1.5-2.5 nm RTP gate oxides: process feasibility, properties and limitations (English)
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- New search for: Bidaud, M.
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In:
Symposium on SiO2 and Advanced Dielectrics, 3
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32-38
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2001
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ISSN:
- Conference paper / Print
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Title:1.5-2.5 nm RTP gate oxides: process feasibility, properties and limitations
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Additional title:1.5 - 2.5 nm dicke Gate-Oxide nach dem schnellen Thermooxidationsverfahren: Prozeßrealisierbarkeit, Eigenschaften und Eingrenzungen
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Contributors:Bidaud, M. ( author ) / Guyader, F. ( author ) / Arnaud, F. ( author ) / Autran, J.L. ( author ) / Barla, K. ( author )
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Published in:Journal of Non-Crystalline Solids ; 280, 1-3 ; 32-38
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Publisher:
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Publication date:2001
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Size:7 Seiten, 13 Bilder, 2 Tabellen, 13 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:Schnellverfahren , Thermooxidation , Silicium-Wafer , Gate-Oxid , MOS-Transistor , Siliciumdioxid , Kinetik , Schichtdicke , Gleichförmigkeit , Nanometerbereich , Verunreinigung , organische Verbindung , Schichtdickenmessung , Kristallebene , Leckstrom , dielektrische Schicht , schnelle Wärmebehandlung
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Source: