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The lattice parameters of 3C-SiC thin films epitaxially grown on 6H-SiC(0001) substrate crystals have been precisely determined by using high resolution x-ray diffraction methods. Reciprocal space maps recorded around symmetrical and asymmetrical x-ray reflections revealed a pseudomorphic growth of the thin film in relation to the substrate lattice, whereas perpendicular to the surface the interplanar spacing of the lattice planes differ slightly Delta d/d = 8.7 dot 10-4. This implicates inherent thin film strain (epsilon) and stress (sigma) components. The in-plane components are found to be epsilonparallel to = -4.8 dot 10-4 and sigmaparallel to = 2.26 dot 108 N/m2, whereas perpendicular to the surface the thin film strain component is found to be epsilon perpendicular to = 2.8 dot 10-4.