Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers (English)
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In:
International Conference on Nitride Semiconductors, 4
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579-583
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2001
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ISSN:
- Conference paper / Print
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Title:Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers
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Contributors:Mavroidis, C. ( author ) / Harris, J.J. ( author ) / Lee, K. ( author ) / Harrison, I. ( author ) / Ansell, B.J. ( author ) / Bougrioua, Z. ( author ) / Moerman, I. ( author )
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Published in:Physica Status Solidi (B) - Basic Research ; 228, 2 ; 579-583
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Publisher:
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Publication date:2001
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Size:5 Seiten
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ISSN:
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Coden:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:Ausgleichsgetriebe , epitaxiale Schicht , blauer Korund , Experiment , Verunreinigung , A3-B5-Verbindung , Al2O3 , Aluminiumverbindung , Amaryl , Aufdampfen , Aufdampfschicht , Beschichten , Beschichtungsmethode , Beweglichkeit , Keramik , Kristallisation , CVD-Beschichten , Dampfphasenepitaxie , Dichte , Edelmetallverbindung , Edelstein , Elektronenstruktur , Elektronenbeweglichkeit , Elektronendichte , Epitaxialtechnik , Extrinsic-Halbleiter , Fabrikation , Fertigungsprozess
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