Small built-in electric fields in quaternary InAlGaN heterostructures (English)
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In:
IWN 2002, International Workshop on Nitride Semiconductors, 2
;
764-768
;
2002
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ISSN:
- Conference paper / Print
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Title:Small built-in electric fields in quaternary InAlGaN heterostructures
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Contributors:Teisseyre, H. ( author ) / Suski, T. ( author ) / Lepkowski, S.P. ( author ) / Anceau, S. ( author ) / Perlin, P. ( author ) / Lefebvre, P. ( author ) / Konczewicz, L. ( author ) / Hirayama, H. ( author ) / Aoyagi, Y. ( author )
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Published in:Physica Status Solidi (B) - Basic Research ; 234, 3 ; 764-768
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Publisher:
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Publication date:2002
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Size:5 Seiten, 4 Bilder, 7 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:Lichtemission , Quantentopf , Druck (hydrostatisch) , Zeitmessung , elektrisches Feld , Heterostruktur , Arbeit (Physik) , Photolumineszenz , Lack , Urheberrecht , Fachzeitschrift , A3-B5-Verbindung , Aluminiumnitrid , Aluminiumverbindung , Keramik , Dauer , Funktionswerkstoff , Galliumnitrid , Galliumverbindung , Gebrauchseigenschaft , Halbleitermaterial , Halbleiterverbindung , Haltbarkeit , Heteroübergang , Indiumnitrid , Indiumverbindung , Kristallfeld , Leichtmetallverbindung , Leuchtanregung , Materialeigenschaft , Metallverbindung , Mitteldruck , Nichtmetallverbindung , Nichtoxidkeramik
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