Novel spin-on carbon hard mask with hardening by ion implantation (English)
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In:
Journal of Photopolymer Science and Technology
;
20
, 3
;
365-372
;
2007
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ISSN:
- Article (Journal) / Print
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Title:Novel spin-on carbon hard mask with hardening by ion implantation
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Contributors:Ishibashi, Takeo ( author ) / Ono, Yoshiharu ( author ) / Yamaguchi, Atsumi ( author ) / Ogawa, Sachiko ( author ) / Hanawa, Tetsuro ( author ) / Shinohara, Masaaki ( author ) / Tadokoro, Masahiro ( author ) / Yonekura, Kazumasa ( author ) / Mitarai, Yuko ( author ) / Matsuda, Keiko ( author )
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Published in:Journal of Photopolymer Science and Technology ; 20, 3 ; 365-372
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Publisher:
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Publication date:2007
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Size:8 Seiten, 15 Bilder, 12 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 20, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 319
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Chemical Amplification Resists:Laboratory Curiosity to ParadigmIto, H. et al. | 2007
- 333
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Study on the Material Design for LWR ImprovementTsubaki, H. / Yamanaka, T. / Nishiyama, F. / Shitabatake, K. et al. | 2007
- 339
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Organic Monolayer Determination on Semiconductor SubstratesGuerrero, D. J. / Lowes, J. / Mercado, R. et al. | 2007
- 345
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Evaluation of a Negative 193nm DUV Resist for the 45 nm Node: Lithography,Degradation Kinetics during Etch and ImplantMay, M. J. / Derrough, S. / Bazin, A. / Mortini, B. / Brochon, C. / Hadziioannou, G. et al. | 2007
- 353
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Novel Low Reflective Index Fluoropolymers based Top Anti-reflective Coatings (TARC) for 193nm LithographyYamashita, T. / Hayami, T. / Ishikawa, T. / Kanemura, T. / Aoyama, H. et al. | 2007
- 359
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Implant Resist Approaches for 193nm Second Generation Radiation Sensitive Developable Bottom Anti Reflective CoatingsHoulihan, F. / Dioses, A. / Toukhy, M. / Romano, A. / Oberlander, J. / Wu, H. / Mullen, S. / Krawicz, A. / Lu, P. / Neisser, M. et al. | 2007
- 365
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Novel Spin-on Carbon Hard Mask with Hardening by Ion ImplantationIshibashi, T. / Ono, Y. / Yamaguchi, A. / Ogawa, S. / Hanawa, T. / Shinohara, M. / Tadokoro, M. / Yonekura, K. / Mitarai, Y. / Matsuda, K. et al. | 2007
- 373
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Development of EUV Resists in University of HyogoWatanabe, T. / Kinoshita, H. et al. | 2007
- 383
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Status of EUV Lithography at IMECGoethals, A. M. / Jonckheere, R. / Lorusso, G. F. / Hermans, J. / Van Roey, F. / Myers, A. / Niroomand, A. / Kim, I. / Iwamoto, F. / Stepanenko, N. et al. | 2007
- 393
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EUV Resist Outgassing: How Much is Too Much?Dean, K. R. / Denbeaux, G. / Wuest, A. / Garg, R. et al. | 2007
- 403
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Evaluation of New Molecular Resist for EUV LithographyOizumi, H. / Tanaka, Y. / Kumise, T. / Shiono, D. / Hirayama, T. / Hada, H. / Onodera, J. / Yamaguchi, A. / Nishiyama, I. et al. | 2007
- 411
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Pathway to sub-30nm Resolution in EUV LithographyThackeray, J. W. / Nassar, R. A. / Spear-Alfonso, K. / Brainard, R. / Goldfarb, D. / Wallow, T. / Wei, Y. / Montgomery, W. / Petrillo, K. / Wood, O. et al. | 2007
- 419
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Mitigation of Low LER with PAG Bonded Resist for EUVLFukushima, Y. / Watanabe, T. / Ohnishi, R. / Kinoshita, H. / Shiotani, H. / Suzuki, S. / Hayakawa, M. / Endo, Y. / Yamanaka, T. / Yusaa, S. et al. | 2007
- 423
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Progress in EUV Resist DevelopmentShimizu, D. / Maruyama, K. / Saitou, A. / Kai, T. / Shimokawa, T. / Fujiwara, K. / Kikuchi, Y. / Nishiyama, I. et al. | 2007
- 429
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Characterization of Negative-Tone Molecular Resist for EUV and EB LithographyKojima, K. / Mori, S. / Shiono, D. / Hada, H. / Onodera, J. et al. | 2007
- 437
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Reduction of the Outgassing Segments and LWR Improvement for the Next Generation EUV LithographyMasuda, S. / Tarutani, S. / Kamimura, S. / Hirano, S. / Hoshino, W. / Mizutani, K. et al. | 2007
- 445
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Analysis of Outgassing from EUV ResistsKobayashi, S. / Toriumi, M. / Santillan, J. J. / Itani, T. et al. | 2007
- 453
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Trends in Patterning Materials for Advanced LithographyAllen, R. D. et al. | 2007
- 457
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Materials Choices for Sub-45nm Lithography:Immersion Characteristics of Slicon-Based Bilayer ResistMalik, S. / Brzozowy, D. / Sarubbi, T. et al. | 2007
- 457
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Materials choices for sub-45nm lithography: immersion characteristics of silicon-based bilayer resistMalik, Sanjay / Brzozowy, David / Sarubbi, Tom et al. | 2007
- 465
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Novel Photoacid Generators for ArF Dry and Immersion Lithography: Application-Related PropertiesAsakura, T. / Yamato, H. / Nishimae, Y. / Ohwa, M. et al. | 2007
- 473
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Tailorning Surface Properties of ArF Resists with Functionally Graded Materials (FGM)Takemoto, I. / Ando, N. / Edamatsu, K. / Fuji, Y. / Hashimoto, K. / Funase, J. / Yokoyama, H. et al. | 2007