Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure (English)
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In:
"Hiroshima" Symposium on the Development and Application of Semiconductor Detectors, 6
;
833-838
;
2007
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ISSN:
- Conference paper / Print
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Title:Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure
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Contributors:Metcalfe, J. ( author ) / Dorfan, D.E. ( author ) / Grillo, A.A. ( author ) / Jones, A. ( author ) / Martinez-McKinney, F. ( author ) / Mekhedjian, P. ( author ) / Mendoza, M. ( author ) / Sadrozinski, H.F.W. ( author ) / Saffier-Ewing, G. ( author ) / Seiden, A. ( author )
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Published in:
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Publisher:
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Publication date:2007
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Size:6 Seiten, 14 Quellen
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:Anwendung in der Elektrotechnik und Elektronik , Gamma-Bestrahlung , Gleichstromübertragung , Hadron , Halbleiterwerkstoff , Heteroübergangsbipolartransistor , Hochenergiephysik , Hochenergiestrahlung , integrierte Schaltung , Kollektor (Transistor) , Leuchtdichte , Protonenbeschuss , Siliciumgermanid , Siliciumsensor , Streifenleiter
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Source: