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Recentky, a three-dimensionally quantum-confined structure, the quantum dot (QD), has been widely studied in terms of both fundamental physics and potential applications for electronic and optical devices. For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs/InAlGaAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 microns were fabricated. Single-mode lasing operation around the wavelength of 1.56 microns was successfully achieved under the pulsed and continuous-wave (CW) modes at room temperature. The lasing operation was also observed up to 70 deg C under pulsed mode, which is the first observation on the single-mode lasing around 1.55 microns. The characteristic temperatures calculated from the temperature dependence of the threshold current density were 121.8 K from room temperature to 45 deg C, which was reduced to 74.2 K from 45 deg C to 70 deg C.